Vishay Siliconix SQ2301ES-T1_GE3

Name: SQ2301ES-T1_GE3
Brand: Vishay Siliconix
SKU: 3070272-SQ2301ES-T1_GE3
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: SQ2301ES-T1_GE3

Manufacturer:: Vishay Siliconix

Ventron No:: 3070272-SQ2301ES-T1_GE3

Description:: MOSFET P-CH 20V 3.9A SOT23-3

ECAD Model:

Datasheet:: SQ2301ES-T1_GE3

Specifications

Vishay Siliconix SQ2301ES-T1_GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SQ2301ES-T1_GE3.

Factory Lead Time
12 Weeks
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
TO-236 (SOT-23)
Operating Temperature
-55°C~175°C TA
Packaging
Tape & Reel (TR)
Series
Automotive, AEC-Q101, TrenchFET®
Published
2017
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
3W Tc
FET Type
P-Channel
Rds On (Max) @ Id, Vgs
120mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
425pF @ 10V
Current - Continuous Drain (Id) @ 25°C
3.9A Tc
Gate Charge (Qg) (Max) @ Vgs
8nC @ 4.5V
Drain to Source Voltage (Vdss)
20V
Drive Voltage (Max Rds On,Min Rds On)
2.5V 4.5V
Vgs (Max)
±8V
RoHS Status
ROHS3 Compliant

Description

SQ2301ES-T1_GE3 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 425pF @ 10V.Operating this transistor requires a 20V drain to source voltage (Vdss).By using drive voltage (2.5V 4.5V), this device helps reduce its overall power consumption.

SQ2301ES-T1_GE3 Features
a 20V drain to source voltage (Vdss)

SQ2301ES-T1_GE3 Applications
There are a lot of Vishay Siliconix
SQ2301ES-T1_GE3 applications of single MOSFETs transistors.

LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools

SQ2301ES-T1_GE3 More Descriptions

VISHAY SQ2301ES-T1-GE3 MOSFET Transistor, P Channel, -3.9 A, -20 V, 0.08 ohm, -4.5 V, -450 mV
Single P-Channel -20 V 0.18 Ohm 8 nC 3 W Silicon Mosfet - SOT-23
Trans MOSFET P-CH Si 20V 3.9A Automotive 3-Pin SOT-23 T/R
Transistor Polarity:p Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:3.9A; On Resistance Rds(On):0.08Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.5V Rohs Compliant: No
MOSFET, AEC-Q101, P-CH, -20V, SOT-23; Transistor Polarity: P Channel; Continuous Drain Current Id: -3.9A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.08ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -1.5V; Power Dissipation Pd: 3W; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: TrenchFET Series; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)

Product Comparison

The three parts on the right have similar specifications to SQ2301ES-T1_GE3.

Image

Part Number

Manufacturer

Factory Lead Time

Mounting Type

Package / Case

Supplier Device Package

Operating Temperature

Packaging

Series

Published

Part Status

Moisture Sensitivity Level (MSL)

Technology

Power Dissipation-Max

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

RoHS Status

Contact Plating

Mount

Number of Pins

Number of Terminations

ECCN Code

Max Operating Temperature

Min Operating Temperature

Max Power Dissipation

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

Number of Elements

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

Transistor Application

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain-source On Resistance-Max

Drain to Source Breakdown Voltage

Avalanche Energy Rating (Eas)

REACH SVHC

Radiation Hardening

Lead Free

Transistor Element Material

Reach Compliance Code

Configuration

Number of Channels

Max Junction Temperature (Tj)

Feedback Cap-Max (Crss)

Height

View Compare
SQ2301ES-T1_GE3

Vishay Siliconix

12 Weeks

Surface Mount

TO-236-3, SC-59, SOT-23-3

TO-236 (SOT-23)

-55°C~175°C TA

Tape & Reel (TR)

Automotive, AEC-Q101, TrenchFET®

2017

Active

1 (Unlimited)

MOSFET (Metal Oxide)

3W Tc

P-Channel

120mOhm @ 2.8A, 4.5V

1.5V @ 250μA

425pF @ 10V

3.9A Tc

8nC @ 4.5V

20V

2.5V 4.5V

±8V

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
SQ2360EES-T1-GE3

Vishay Siliconix

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

-

Digi-Reel®

TrenchFET®

2008

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

-

N-Channel

85m Ω @ 6A, 10V

2.5V @ 250μA

370pF @ 25V

4.4A Tc

12nC @ 10V

-

-

-

ROHS3 Compliant

Tin

Surface Mount

3

3

EAR99

175°C

-55°C

3W

DUAL

GULL WING

260

40

3

1

Single

ENHANCEMENT MODE

3W

5 ns

SWITCHING

11ns

8 ns

10 ns

4.4A

1.5V

20V

0.066Ohm

60V

1.8 mJ

Unknown

No

Lead Free

-

-

-

-

-

-

-

SQ2301ES-T1_GE3 vs SQ2360EES-T1-GE3
SQ2337ES-T1_GE3

Vishay Siliconix

12 Weeks

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3 (TO-236)

-55°C~175°C TJ

Tape & Reel (TR)

Automotive, AEC-Q101, TrenchFET®

2017

Active

1 (Unlimited)

MOSFET (Metal Oxide)

3W Tc

P-Channel

290mOhm @ 1A, 4.5V

2.5V @ 250μA

620pF @ 30V

2.2A Tc

18nC @ 10V

80V

6V 10V

±20V

ROHS3 Compliant

-

Surface Mount

3

-

-

175°C

-55°C

-

-

-

-

-

-

1

-

-

3W

-

-

-

-

-

2.2A

-

20V

-

-

-

-

-

-

-

-

-

-

-

-

-

SQ2301ES-T1_GE3 vs SQ2337ES-T1_GE3
SQ2389ES-T1_GE3

Vishay Siliconix

12 Weeks

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

-55°C~175°C TJ

Tape & Reel (TR)

Automotive, AEC-Q101, TrenchFET®

2017

Active

1 (Unlimited)

MOSFET (Metal Oxide)

3W Tc

P-Channel

94m Ω @ 10A, 10V

2.5V @ 250μA

420pF @ 20V

4.1A Tc

12nC @ 10V

40V

4.5V 10V

±20V

ROHS3 Compliant

-

Surface Mount

3

3

EAR99

-

-

-

DUAL

GULL WING

NOT SPECIFIED

NOT SPECIFIED

-

1

-

ENHANCEMENT MODE

3W

7 ns

-

12ns

4 ns

16 ns

-4.1A

2V

20V

-

-40V

-

No SVHC

-

-

SILICON

unknown

SINGLE WITH BUILT-IN DIODE

1

175°C

54 pF

1.12mm

SQ2301ES-T1_GE3 vs SQ2389ES-T1_GE3