Vishay Siliconix SQ2389ES-T1_GE3
- Part Number:
- SQ2389ES-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2487858-SQ2389ES-T1_GE3
- Description:
- MOSFET P-CHAN 40V SO23
- Datasheet:
- SQ2389ES-T1_GE3
Vishay Siliconix SQ2389ES-T1_GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SQ2389ES-T1_GE3.
- Factory Lead Time12 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- SeriesAutomotive, AEC-Q101, TrenchFET®
- Published2017
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codeunknown
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Number of Channels1
- Power Dissipation-Max3W Tc
- Operating ModeENHANCEMENT MODE
- Power Dissipation3W
- Turn On Delay Time7 ns
- FET TypeP-Channel
- Rds On (Max) @ Id, Vgs94m Ω @ 10A, 10V
- Vgs(th) (Max) @ Id2.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds420pF @ 20V
- Current - Continuous Drain (Id) @ 25°C4.1A Tc
- Gate Charge (Qg) (Max) @ Vgs12nC @ 10V
- Rise Time12ns
- Drain to Source Voltage (Vdss)40V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)4 ns
- Turn-Off Delay Time16 ns
- Continuous Drain Current (ID)-4.1A
- Threshold Voltage2V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage-40V
- Max Junction Temperature (Tj)175°C
- Feedback Cap-Max (Crss)54 pF
- Height1.12mm
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
SQ2389ES-T1_GE3 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 420pF @ 20V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has -4.1A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is -40V, and this device has a drainage-to-source breakdown voltage of -40VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 16 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 7 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 2V, which means that it will not activate any of its functions when its threshold voltage reaches 2V.For this transistor to work, a voltage 40V is required between drain and source (Vdss).Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.
SQ2389ES-T1_GE3 Features
a continuous drain current (ID) of -4.1A
a drain-to-source breakdown voltage of -40V voltage
the turn-off delay time is 16 ns
a threshold voltage of 2V
a 40V drain to source voltage (Vdss)
SQ2389ES-T1_GE3 Applications
There are a lot of Vishay Siliconix
SQ2389ES-T1_GE3 applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 420pF @ 20V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has -4.1A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is -40V, and this device has a drainage-to-source breakdown voltage of -40VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 16 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 7 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 2V, which means that it will not activate any of its functions when its threshold voltage reaches 2V.For this transistor to work, a voltage 40V is required between drain and source (Vdss).Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.
SQ2389ES-T1_GE3 Features
a continuous drain current (ID) of -4.1A
a drain-to-source breakdown voltage of -40V voltage
the turn-off delay time is 16 ns
a threshold voltage of 2V
a 40V drain to source voltage (Vdss)
SQ2389ES-T1_GE3 Applications
There are a lot of Vishay Siliconix
SQ2389ES-T1_GE3 applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
SQ2389ES-T1_GE3 More Descriptions
P-Channel 60 V 0.94 Ohm 12 nC SMT Automotive Power Mosfet - SOT-23
Trans MOSFET P-CH 40V 4.1A Automotive 3-Pin SOT-23 T/R
MOSFET, AUTO, P-CH, 60V, 2.3A, SOT-23; Transistor Polarity: P Channel; Continuous Drain Current Id: 4.1A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 94mohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 3.3W; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: TrenchFET Series; Automotive Qualification Standard: AEC-Q101; MSL: MSL 3 - 168 hours; SVHC: No SVHC (17-Dec-2015)
Mosfet, Aec-Q101, N-Ch, -40, -4.1A, Sot23; Channel Type:P Channel; Drain Source Voltage Vds:-40V; Continuous Drain Current Id:-4.1A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:-10V; Gate Source Threshold Voltage Max:-2V Rohs Compliant: Yes |Vishay SQ2389ES-T1_GE3
Trans MOSFET P-CH 40V 4.1A Automotive 3-Pin SOT-23 T/R
MOSFET, AUTO, P-CH, 60V, 2.3A, SOT-23; Transistor Polarity: P Channel; Continuous Drain Current Id: 4.1A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 94mohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 3.3W; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: TrenchFET Series; Automotive Qualification Standard: AEC-Q101; MSL: MSL 3 - 168 hours; SVHC: No SVHC (17-Dec-2015)
Mosfet, Aec-Q101, N-Ch, -40, -4.1A, Sot23; Channel Type:P Channel; Drain Source Voltage Vds:-40V; Continuous Drain Current Id:-4.1A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:-10V; Gate Source Threshold Voltage Max:-2V Rohs Compliant: Yes |Vishay SQ2389ES-T1_GE3
The three parts on the right have similar specifications to SQ2389ES-T1_GE3.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Number of ElementsConfigurationNumber of ChannelsPower Dissipation-MaxOperating ModePower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageMax Junction Temperature (Tj)Feedback Cap-Max (Crss)HeightREACH SVHCRoHS StatusWeightPbfree CodeSubcategoryPin CountElement ConfigurationNominal VgsRadiation HardeningLead FreeSupplier Device PackageMax Operating TemperatureMin Operating TemperatureMax Power DissipationBase Part NumberTransistor ApplicationDrain-source On Resistance-MaxView Compare
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SQ2389ES-T1_GE312 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-33SILICON-55°C~175°C TJTape & Reel (TR)Automotive, AEC-Q101, TrenchFET®2017Active1 (Unlimited)3EAR99MOSFET (Metal Oxide)DUALGULL WINGNOT SPECIFIEDunknownNOT SPECIFIED1SINGLE WITH BUILT-IN DIODE13W TcENHANCEMENT MODE3W7 nsP-Channel94m Ω @ 10A, 10V2.5V @ 250μA420pF @ 20V4.1A Tc12nC @ 10V12ns40V4.5V 10V±20V4 ns16 ns-4.1A2V20V-40V175°C54 pF1.12mmNo SVHCROHS3 Compliant----------------
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-Surface MountSurface MountTO-236-3, SC-59, SOT-23-33SILICON-55°C~175°C TJDigi-Reel®TrenchFET®2013Obsolete1 (Unlimited)3EAR99MOSFET (Metal Oxide)DUALGULL WING260-401-12W TcENHANCEMENT MODE2W7 nsP-Channel150m Ω @ 2.4A, 10V2.5V @ 250μA545pF @ 30V2.5A Tc17nC @ 10V8ns60V4.5V 10V±20V8 ns19 ns2.5A-1.5V20V-60V-50 pF-UnknownROHS3 Compliant1.437803gyesOther Transistors3Single-2.5 VNoLead Free-------
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12 Weeks-Surface MountTO-236-3, SC-59, SOT-23-3---55°C~175°C TATape & Reel (TR)Automotive, AEC-Q101, TrenchFET®2017Active1 (Unlimited)--MOSFET (Metal Oxide)--------3W Tc---P-Channel120mOhm @ 2.8A, 4.5V1.5V @ 250μA425pF @ 10V3.9A Tc8nC @ 4.5V-20V2.5V 4.5V±8V----------ROHS3 Compliant--------TO-236 (SOT-23)------
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-Surface MountSurface MountTO-236-3, SC-59, SOT-23-33--Cut Tape (CT)TrenchFET®2013Obsolete1 (Unlimited)3EAR99MOSFET (Metal Oxide)DUALGULL WING260-401---ENHANCEMENT MODE3W7 nsP-Channel75m Ω @ 3A, 10V2.5V @ 250μA620pF @ 25V4.6A Tc16nC @ 10V15ns40V--25 ns25 ns-4.6A-2V20V-40V---UnknownROHS3 Compliant-yesOther Transistors3Single-NoLead Free-175°C-55°C3WSQ2319SWITCHING0.082Ohm
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