SQ2389ES-T1_GE3

Vishay Siliconix SQ2389ES-T1_GE3

Part Number:
SQ2389ES-T1_GE3
Manufacturer:
Vishay Siliconix
Ventron No:
2487858-SQ2389ES-T1_GE3
Description:
MOSFET P-CHAN 40V SO23
ECAD Model:
Datasheet:
SQ2389ES-T1_GE3

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Specifications
Vishay Siliconix SQ2389ES-T1_GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SQ2389ES-T1_GE3.
  • Factory Lead Time
    12 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    Automotive, AEC-Q101, TrenchFET®
  • Published
    2017
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    unknown
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Number of Channels
    1
  • Power Dissipation-Max
    3W Tc
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    3W
  • Turn On Delay Time
    7 ns
  • FET Type
    P-Channel
  • Rds On (Max) @ Id, Vgs
    94m Ω @ 10A, 10V
  • Vgs(th) (Max) @ Id
    2.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    420pF @ 20V
  • Current - Continuous Drain (Id) @ 25°C
    4.1A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    12nC @ 10V
  • Rise Time
    12ns
  • Drain to Source Voltage (Vdss)
    40V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    4 ns
  • Turn-Off Delay Time
    16 ns
  • Continuous Drain Current (ID)
    -4.1A
  • Threshold Voltage
    2V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    -40V
  • Max Junction Temperature (Tj)
    175°C
  • Feedback Cap-Max (Crss)
    54 pF
  • Height
    1.12mm
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
Description
SQ2389ES-T1_GE3 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 420pF @ 20V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has -4.1A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is -40V, and this device has a drainage-to-source breakdown voltage of -40VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 16 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 7 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 2V, which means that it will not activate any of its functions when its threshold voltage reaches 2V.For this transistor to work, a voltage 40V is required between drain and source (Vdss).Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.

SQ2389ES-T1_GE3 Features
a continuous drain current (ID) of -4.1A
a drain-to-source breakdown voltage of -40V voltage
the turn-off delay time is 16 ns
a threshold voltage of 2V
a 40V drain to source voltage (Vdss)


SQ2389ES-T1_GE3 Applications
There are a lot of Vishay Siliconix
SQ2389ES-T1_GE3 applications of single MOSFETs transistors.


AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
SQ2389ES-T1_GE3 More Descriptions
P-Channel 60 V 0.94 Ohm 12 nC SMT Automotive Power Mosfet - SOT-23
Trans MOSFET P-CH 40V 4.1A Automotive 3-Pin SOT-23 T/R
MOSFET, AUTO, P-CH, 60V, 2.3A, SOT-23; Transistor Polarity: P Channel; Continuous Drain Current Id: 4.1A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 94mohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 3.3W; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: TrenchFET Series; Automotive Qualification Standard: AEC-Q101; MSL: MSL 3 - 168 hours; SVHC: No SVHC (17-Dec-2015)
Mosfet, Aec-Q101, N-Ch, -40, -4.1A, Sot23; Channel Type:P Channel; Drain Source Voltage Vds:-40V; Continuous Drain Current Id:-4.1A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:-10V; Gate Source Threshold Voltage Max:-2V Rohs Compliant: Yes |Vishay SQ2389ES-T1_GE3
Product Comparison
The three parts on the right have similar specifications to SQ2389ES-T1_GE3.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Number of Elements
    Configuration
    Number of Channels
    Power Dissipation-Max
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Max Junction Temperature (Tj)
    Feedback Cap-Max (Crss)
    Height
    REACH SVHC
    RoHS Status
    Weight
    Pbfree Code
    Subcategory
    Pin Count
    Element Configuration
    Nominal Vgs
    Radiation Hardening
    Lead Free
    Supplier Device Package
    Max Operating Temperature
    Min Operating Temperature
    Max Power Dissipation
    Base Part Number
    Transistor Application
    Drain-source On Resistance-Max
    View Compare
  • SQ2389ES-T1_GE3
    SQ2389ES-T1_GE3
    12 Weeks
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    Automotive, AEC-Q101, TrenchFET®
    2017
    Active
    1 (Unlimited)
    3
    EAR99
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    NOT SPECIFIED
    unknown
    NOT SPECIFIED
    1
    SINGLE WITH BUILT-IN DIODE
    1
    3W Tc
    ENHANCEMENT MODE
    3W
    7 ns
    P-Channel
    94m Ω @ 10A, 10V
    2.5V @ 250μA
    420pF @ 20V
    4.1A Tc
    12nC @ 10V
    12ns
    40V
    4.5V 10V
    ±20V
    4 ns
    16 ns
    -4.1A
    2V
    20V
    -40V
    175°C
    54 pF
    1.12mm
    No SVHC
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • SQ2361EES-T1-GE3
    -
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    SILICON
    -55°C~175°C TJ
    Digi-Reel®
    TrenchFET®
    2013
    Obsolete
    1 (Unlimited)
    3
    EAR99
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    -
    40
    1
    -
    1
    2W Tc
    ENHANCEMENT MODE
    2W
    7 ns
    P-Channel
    150m Ω @ 2.4A, 10V
    2.5V @ 250μA
    545pF @ 30V
    2.5A Tc
    17nC @ 10V
    8ns
    60V
    4.5V 10V
    ±20V
    8 ns
    19 ns
    2.5A
    -1.5V
    20V
    -60V
    -
    50 pF
    -
    Unknown
    ROHS3 Compliant
    1.437803g
    yes
    Other Transistors
    3
    Single
    -2.5 V
    No
    Lead Free
    -
    -
    -
    -
    -
    -
    -
  • SQ2301ES-T1_GE3
    12 Weeks
    -
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    -
    -
    -55°C~175°C TA
    Tape & Reel (TR)
    Automotive, AEC-Q101, TrenchFET®
    2017
    Active
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    -
    3W Tc
    -
    -
    -
    P-Channel
    120mOhm @ 2.8A, 4.5V
    1.5V @ 250μA
    425pF @ 10V
    3.9A Tc
    8nC @ 4.5V
    -
    20V
    2.5V 4.5V
    ±8V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    TO-236 (SOT-23)
    -
    -
    -
    -
    -
    -
  • SQ2319ES-T1-GE3
    -
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    -
    -
    Cut Tape (CT)
    TrenchFET®
    2013
    Obsolete
    1 (Unlimited)
    3
    EAR99
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    -
    40
    1
    -
    -
    -
    ENHANCEMENT MODE
    3W
    7 ns
    P-Channel
    75m Ω @ 3A, 10V
    2.5V @ 250μA
    620pF @ 25V
    4.6A Tc
    16nC @ 10V
    15ns
    40V
    -
    -
    25 ns
    25 ns
    -4.6A
    -2V
    20V
    -40V
    -
    -
    -
    Unknown
    ROHS3 Compliant
    -
    yes
    Other Transistors
    3
    Single
    -
    No
    Lead Free
    -
    175°C
    -55°C
    3W
    SQ2319
    SWITCHING
    0.082Ohm
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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