Vishay Siliconix SQ2337ES-T1_GE3

Name: SQ2337ES-T1_GE3
Brand: Vishay Siliconix
SKU: 2851230-SQ2337ES-T1_GE3
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: SQ2337ES-T1_GE3

Manufacturer:: Vishay Siliconix

Ventron No:: 2851230-SQ2337ES-T1_GE3

Description:: MOSFET P-CHAN 80V SOT23

ECAD Model:

Datasheet:: SQ2337ES-T1_GE3

Specifications

Vishay Siliconix SQ2337ES-T1_GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SQ2337ES-T1_GE3.

Factory Lead Time
12 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Supplier Device Package
SOT-23-3 (TO-236)
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
Automotive, AEC-Q101, TrenchFET®
Published
2017
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Technology
MOSFET (Metal Oxide)
Number of Elements
1
Power Dissipation-Max
3W Tc
Power Dissipation
3W
FET Type
P-Channel
Rds On (Max) @ Id, Vgs
290mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id
2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
620pF @ 30V
Current - Continuous Drain (Id) @ 25°C
2.2A Tc
Gate Charge (Qg) (Max) @ Vgs
18nC @ 10V
Drain to Source Voltage (Vdss)
80V
Drive Voltage (Max Rds On,Min Rds On)
6V 10V
Vgs (Max)
±20V
Continuous Drain Current (ID)
2.2A
Gate to Source Voltage (Vgs)
20V
RoHS Status
ROHS3 Compliant

Description

SQ2337ES-T1_GE3 Description
The SQ2337ES-T1_GE3 is an Automotive P-Channel 80 V (D-S) 175 °C MOSFET. A form of field-effect transistor (FET) called a metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is most frequently made by carefully controlling the oxidation of silicon. It has an isolated gate, whose voltage controls the device's conductivity. Electronic signals can be switched or amplified using this material's capacity to change conductivity in response to the amount of applied voltage. About the same thing as a MOSFET is a metal-insulator-semiconductor field-effect transistor (MISFET). IGFET, or insulated-gate field-effect transistor, is another equivalent term.

SQ2337ES-T1_GE3 Features
TrenchFET® Power MOSFET
AEC-Q101 Qualifiedc
100 % Rg and UIS Tested
Withstand voltage: The optimum structure is selected for the target withstand voltage
Low On-Resistance: U-MOS for products with 250 V or less, SJ-MOS (or DTMOS) are advantageous for products with more than that
High current: The same tendency as for low ON resistance

SQ2337ES-T1_GE3 Applications
Automotive
Industrial and communications systems
As switching devices in electronic control units
As power converters in modern electric vehicles

SQ2337ES-T1_GE3 More Descriptions

P-Channel 80V 2.2A (Tc) 3W (Tc) Surface Mount SOT-23-3 (TO-236) Transistor
Trans MOSFET P-CH 80V 2.2A Automotive 3-Pin SOT-23 T/R
Power Field-Effect Transistor, 2.2A I(D), 80V, 0.29ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

Product Comparison

The three parts on the right have similar specifications to SQ2337ES-T1_GE3.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Supplier Device Package

Operating Temperature

Packaging

Series

Published

Part Status

Moisture Sensitivity Level (MSL)

Max Operating Temperature

Min Operating Temperature

Technology

Number of Elements

Power Dissipation-Max

Power Dissipation

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

RoHS Status

Weight

Transistor Element Material

Pbfree Code

Number of Terminations

ECCN Code

Subcategory

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

Number of Channels

Element Configuration

Operating Mode

Turn On Delay Time

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Threshold Voltage

Drain to Source Breakdown Voltage

Nominal Vgs

Feedback Cap-Max (Crss)

REACH SVHC

Radiation Hardening

Lead Free

Max Power Dissipation

Base Part Number

Transistor Application

Drain-source On Resistance-Max

Reach Compliance Code

Configuration

Max Junction Temperature (Tj)

Height

View Compare
SQ2337ES-T1_GE3

Vishay Siliconix

12 Weeks

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

SOT-23-3 (TO-236)

-55°C~175°C TJ

Tape & Reel (TR)

Automotive, AEC-Q101, TrenchFET®

2017

Active

1 (Unlimited)

175°C

-55°C

MOSFET (Metal Oxide)

1

3W Tc

3W

P-Channel

290mOhm @ 1A, 4.5V

2.5V @ 250μA

620pF @ 30V

2.2A Tc

18nC @ 10V

80V

6V 10V

±20V

2.2A

20V

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
SQ2361EES-T1-GE3

Vishay Siliconix

-

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

-

-55°C~175°C TJ

Digi-Reel®

TrenchFET®

2013

Obsolete

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

1

2W Tc

2W

P-Channel

150m Ω @ 2.4A, 10V

2.5V @ 250μA

545pF @ 30V

2.5A Tc

17nC @ 10V

60V

4.5V 10V

±20V

2.5A

20V

ROHS3 Compliant

1.437803g

SILICON

yes

3

EAR99

Other Transistors

DUAL

GULL WING

260

40

3

1

Single

ENHANCEMENT MODE

7 ns

8ns

8 ns

19 ns

-1.5V

-60V

-2.5 V

50 pF

Unknown

No

Lead Free

-

-

-

-

-

-

-

-

SQ2337ES-T1_GE3 vs SQ2361EES-T1-GE3
SQ2319ES-T1-GE3

Vishay Siliconix

-

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

-

-

Cut Tape (CT)

TrenchFET®

2013

Obsolete

1 (Unlimited)

175°C

-55°C

MOSFET (Metal Oxide)

1

-

3W

P-Channel

75m Ω @ 3A, 10V

2.5V @ 250μA

620pF @ 25V

4.6A Tc

16nC @ 10V

40V

-

-

-4.6A

20V

ROHS3 Compliant

-

-

yes

3

EAR99

Other Transistors

DUAL

GULL WING

260

40

3

-

Single

ENHANCEMENT MODE

7 ns

15ns

25 ns

25 ns

-2V

-40V

-

-

Unknown

No

Lead Free

3W

SQ2319

SWITCHING

0.082Ohm

-

-

-

-

SQ2337ES-T1_GE3 vs SQ2319ES-T1-GE3
SQ2389ES-T1_GE3

Vishay Siliconix

12 Weeks

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

-

-55°C~175°C TJ

Tape & Reel (TR)

Automotive, AEC-Q101, TrenchFET®

2017

Active

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

1

3W Tc

3W

P-Channel

94m Ω @ 10A, 10V

2.5V @ 250μA

420pF @ 20V

4.1A Tc

12nC @ 10V

40V

4.5V 10V

±20V

-4.1A

20V

ROHS3 Compliant

-

SILICON

-

3

EAR99

-

DUAL

GULL WING

NOT SPECIFIED

NOT SPECIFIED

-

1

-

ENHANCEMENT MODE

7 ns

12ns

4 ns

16 ns

2V

-40V

-

54 pF

No SVHC

-

-

-

-

-

-

unknown

SINGLE WITH BUILT-IN DIODE

175°C

1.12mm

SQ2337ES-T1_GE3 vs SQ2389ES-T1_GE3

Certification

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SQ2337E~~(2)~~
SQ2337~~(2)~~
SQ233~~(2)~~
SQ23~~(50)~~
SQ2~~(111)~~

Part Number	Manufacturers	Description	Stock	Price
SQ2337ES-T1-GE3 DISTI #SQ2337ES-T1-GE3	Vishay Intertechnologies	P-CHANNEL 80-V (D-S) 175C MOSF	1966	1 $0.5457 10 $0.4571 25 $0.4559 100 $0.3592 250 $0.3585 500 $0.3022 1000 $0.2437
SQ2337ES-T1_GE3 DISTI #SQ2337ES-T1_GE3	Vishay Siliconix	MOSFET P-CHAN 80V SOT23 RoHS: Compliant	14769	1 $0.75 10 $0.65 100 $0.506 500 $0.37904 1000 $0.30653
SQ2337ES-T1_GE3 DISTI #SQ2337ES-T1_GE3	Vishay Siliconix	MOSFET P-CHAN 80V SOT23 RoHS: Compliant	14769	1 $0.75 10 $0.65 100 $0.506 500 $0.37904 1000 $0.30653
SQ2337ES-T1_GE3 DISTI #SQ2337ES-T1_GE3	Vishay Siliconix	MOSFET P-CHAN 80V SOT23 RoHS: Compliant	12000	3000 $0.2712
SQ2337ES-T1-GE3 DISTI #SQ2337ES-T1-GE3	Vishay Intertechnologies	P-CHANNEL 80-V (D-S) 175C MOSF	1966	32 $0.4559 100 $0.3592 250 $0.3585 500 $0.3022 1000 $0.2437
SQ2337ES-T1-GE3 DISTI #SQ2337ES-T1-GE3	Vishay Intertechnologies	P-CHANNEL 80-V (D-S) 175C MOSF	110	10 $0.8058 50 $0.5368 100 $0.4386
SQ2337ES-T1_GE3 DISTI #SQ2337ES-T1_GE3	Vishay Intertechnologies	Trans MOSFET P-CH 80V 2.2A 3-Pin SOT-23 T/R - Tape RoHS: Not Compliant	0	3000 $0.2319 6000 $0.2249 12000 $0.2159 18000 $0.2099 30000 $0.2049
SQ2337ES-T1_GE3 DISTI #SQ2337ES-T1_GE3	Vishay Intertechnologies	Trans MOSFET P-CH 80V 2.2A 3-Pin SOT-23 T/R (Alt: RoHS: Compliant	0
SQ2337ES-T1_GE3 DISTI #SQ2337ES-T1_GE3	Vishay Intertechnologies	P-CHANNEL 80-V (D-S) 175C MOSFET	0	1 $0.684 10 $0.487 25 $0.432 50 $0.38 100 $0.322 500 $0.272 1000 $0.24 2500 $0.22
SQ2337ES-T1_GE3 DISTI #SQ2337ES-T1_GE3	Vishay Intertechnologies	MOSFET P-Channel 80V AEC-Q101 Qualified RoHS: Compliant	84358	1 $0.63 10 $0.511 100 $0.388 500 $0.32 1000 $0.256 3000 $0.232
SQ2337ES-T1-GE3 DISTI #SQ2337ES-T1-GE3	Vishay Intertechnologies	MOSFET RECOMMENDED ALT 78-SQ2337ES-T1_GE3 RoHS: Compliant	0

Vishay Siliconix SQ2337ES-T1_GE3

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