SI4164DY-T1-GE3

Vishay Siliconix SI4164DY-T1-GE3

Part Number:
SI4164DY-T1-GE3
Manufacturer:
Vishay Siliconix
Ventron No:
3070036-SI4164DY-T1-GE3
Description:
MOSFET N-CH 30V 30A 8-SOIC
ECAD Model:
Datasheet:
SI4164DY-T1-GE3

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Specifications
Vishay Siliconix SI4164DY-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI4164DY-T1-GE3.
  • Factory Lead Time
    14 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Number of Pins
    8
  • Weight
    186.993455mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    TrenchFET®
  • Published
    2011
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    8
  • ECCN Code
    EAR99
  • Resistance
    3.2MOhm
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    8
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    3W Ta 6W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    3W
  • Turn On Delay Time
    35 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    3.2m Ω @ 15A, 10V
  • Vgs(th) (Max) @ Id
    2.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    3545pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    30A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    95nC @ 10V
  • Rise Time
    16ns
  • Drain to Source Voltage (Vdss)
    30V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    16 ns
  • Turn-Off Delay Time
    48 ns
  • Continuous Drain Current (ID)
    30A
  • Threshold Voltage
    2.5V
  • Gate to Source Voltage (Vgs)
    20V
  • DS Breakdown Voltage-Min
    30V
  • Height
    1.55mm
  • Length
    5mm
  • Width
    4mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
SI4164DY-T1-GE3 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 3545pF @ 15V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 30A continuous drain current (ID).Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 48 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 35 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 2.5V, which means that it will not activate any of its functions when its threshold voltage reaches 2.5V.Normal operation requires that the DS breakdown voltage remain above 30V.For this transistor to work, a voltage 30V is required between drain and source (Vdss).Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.

SI4164DY-T1-GE3 Features
a continuous drain current (ID) of 30A
the turn-off delay time is 48 ns
a threshold voltage of 2.5V
a 30V drain to source voltage (Vdss)


SI4164DY-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI4164DY-T1-GE3 applications of single MOSFETs transistors.


AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
SI4164DY-T1-GE3 More Descriptions
Single N-Channel 30 V 0.0032 Ohm Surface Mount Power Mosfet - SOIC-8
Small Signal Field-Effect Transistor, 30A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
MOSFET, N CH, 30V, 0.0026OHM, 30A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0026ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:6W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:-
Product Comparison
The three parts on the right have similar specifications to SI4164DY-T1-GE3.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    DS Breakdown Voltage-Min
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Pbfree Code
    Subcategory
    Drain Current-Max (Abs) (ID)
    Drain to Source Breakdown Voltage
    Avalanche Energy Rating (Eas)
    Supplier Device Package
    Max Operating Temperature
    Min Operating Temperature
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    View Compare
  • SI4164DY-T1-GE3
    SI4164DY-T1-GE3
    14 Weeks
    Tin
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    186.993455mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2011
    e3
    Active
    1 (Unlimited)
    8
    EAR99
    3.2MOhm
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    40
    8
    1
    1
    3W Ta 6W Tc
    Single
    ENHANCEMENT MODE
    3W
    35 ns
    N-Channel
    SWITCHING
    3.2m Ω @ 15A, 10V
    2.5V @ 250μA
    3545pF @ 15V
    30A Tc
    95nC @ 10V
    16ns
    30V
    4.5V 10V
    ±20V
    16 ns
    48 ns
    30A
    2.5V
    20V
    30V
    1.55mm
    5mm
    4mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • SI4102DY-T1-GE3
    15 Weeks
    Tin
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    186.993455mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2013
    e3
    Obsolete
    1 (Unlimited)
    8
    EAR99
    -
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    30
    8
    1
    1
    2.4W Ta 4.8W Tc
    Single
    ENHANCEMENT MODE
    4.8W
    10 ns
    N-Channel
    SWITCHING
    158m Ω @ 2.7A, 10V
    4V @ 250μA
    370pF @ 50V
    3.8A Tc
    11nC @ 10V
    10ns
    -
    6V 10V
    ±20V
    10 ns
    12 ns
    2.7A
    2V
    20V
    -
    1.55mm
    5mm
    4mm
    Unknown
    No
    ROHS3 Compliant
    Lead Free
    yes
    FET General Purpose Power
    0.0027A
    100V
    -
    -
    -
    -
    -
    -
    -
  • SI4104DY-T1-E3
    -
    -
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2016
    -
    Obsolete
    1 (Unlimited)
    8
    EAR99
    -
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    -
    -
    8
    1
    -
    2.5W Ta 5W Tc
    Single
    ENHANCEMENT MODE
    2.5W
    9 ns
    N-Channel
    SWITCHING
    105m Ω @ 5A, 10V
    4.5V @ 250μA
    446pF @ 50V
    4.6A Tc
    13nC @ 10V
    9ns
    100V
    10V
    ±20V
    8 ns
    10 ns
    3.2A
    -
    20V
    -
    -
    -
    -
    -
    No
    ROHS3 Compliant
    -
    -
    FET General Purpose Power
    4.6A
    -
    4 mJ
    -
    -
    -
    -
    -
    -
  • SI4102DY-T1-E3
    -
    -
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2016
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    1
    -
    2.4W Ta 4.8W Tc
    Single
    -
    2.4W
    10 ns
    N-Channel
    -
    158mOhm @ 2.7A, 10V
    4V @ 250μA
    370pF @ 50V
    3.8A Tc
    11nC @ 10V
    10ns
    100V
    6V 10V
    ±20V
    10 ns
    12 ns
    2.7A
    -
    20V
    -
    -
    -
    -
    -
    No
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    8-SO
    150°C
    -55°C
    370pF
    158mOhm
    158 mΩ
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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