Vishay Siliconix SI4164DY-T1-GE3
- Part Number:
- SI4164DY-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 3070036-SI4164DY-T1-GE3
- Description:
- MOSFET N-CH 30V 30A 8-SOIC
- Datasheet:
- SI4164DY-T1-GE3
Vishay Siliconix SI4164DY-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI4164DY-T1-GE3.
- Factory Lead Time14 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Number of Pins8
- Weight186.993455mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesTrenchFET®
- Published2011
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- ECCN CodeEAR99
- Resistance3.2MOhm
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count8
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max3W Ta 6W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation3W
- Turn On Delay Time35 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs3.2m Ω @ 15A, 10V
- Vgs(th) (Max) @ Id2.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds3545pF @ 15V
- Current - Continuous Drain (Id) @ 25°C30A Tc
- Gate Charge (Qg) (Max) @ Vgs95nC @ 10V
- Rise Time16ns
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)16 ns
- Turn-Off Delay Time48 ns
- Continuous Drain Current (ID)30A
- Threshold Voltage2.5V
- Gate to Source Voltage (Vgs)20V
- DS Breakdown Voltage-Min30V
- Height1.55mm
- Length5mm
- Width4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
SI4164DY-T1-GE3 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 3545pF @ 15V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 30A continuous drain current (ID).Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 48 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 35 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 2.5V, which means that it will not activate any of its functions when its threshold voltage reaches 2.5V.Normal operation requires that the DS breakdown voltage remain above 30V.For this transistor to work, a voltage 30V is required between drain and source (Vdss).Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.
SI4164DY-T1-GE3 Features
a continuous drain current (ID) of 30A
the turn-off delay time is 48 ns
a threshold voltage of 2.5V
a 30V drain to source voltage (Vdss)
SI4164DY-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI4164DY-T1-GE3 applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 3545pF @ 15V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 30A continuous drain current (ID).Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 48 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 35 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 2.5V, which means that it will not activate any of its functions when its threshold voltage reaches 2.5V.Normal operation requires that the DS breakdown voltage remain above 30V.For this transistor to work, a voltage 30V is required between drain and source (Vdss).Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.
SI4164DY-T1-GE3 Features
a continuous drain current (ID) of 30A
the turn-off delay time is 48 ns
a threshold voltage of 2.5V
a 30V drain to source voltage (Vdss)
SI4164DY-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI4164DY-T1-GE3 applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
SI4164DY-T1-GE3 More Descriptions
Single N-Channel 30 V 0.0032 Ohm Surface Mount Power Mosfet - SOIC-8
Small Signal Field-Effect Transistor, 30A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
MOSFET, N CH, 30V, 0.0026OHM, 30A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0026ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:6W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:-
Small Signal Field-Effect Transistor, 30A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
MOSFET, N CH, 30V, 0.0026OHM, 30A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0026ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:6W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:-
The three parts on the right have similar specifications to SI4164DY-T1-GE3.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)DS Breakdown Voltage-MinHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreePbfree CodeSubcategoryDrain Current-Max (Abs) (ID)Drain to Source Breakdown VoltageAvalanche Energy Rating (Eas)Supplier Device PackageMax Operating TemperatureMin Operating TemperatureInput CapacitanceDrain to Source ResistanceRds On MaxView Compare
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SI4164DY-T1-GE314 WeeksTinSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8186.993455mgSILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2011e3Active1 (Unlimited)8EAR993.2MOhmMOSFET (Metal Oxide)DUALGULL WING260408113W Ta 6W TcSingleENHANCEMENT MODE3W35 nsN-ChannelSWITCHING3.2m Ω @ 15A, 10V2.5V @ 250μA3545pF @ 15V30A Tc95nC @ 10V16ns30V4.5V 10V±20V16 ns48 ns30A2.5V20V30V1.55mm5mm4mmNo SVHCNoROHS3 CompliantLead Free------------
-
15 WeeksTinSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8186.993455mgSILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2013e3Obsolete1 (Unlimited)8EAR99-MOSFET (Metal Oxide)DUALGULL WING260308112.4W Ta 4.8W TcSingleENHANCEMENT MODE4.8W10 nsN-ChannelSWITCHING158m Ω @ 2.7A, 10V4V @ 250μA370pF @ 50V3.8A Tc11nC @ 10V10ns-6V 10V±20V10 ns12 ns2.7A2V20V-1.55mm5mm4mmUnknownNoROHS3 CompliantLead FreeyesFET General Purpose Power0.0027A100V-------
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--Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8-SILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2016-Obsolete1 (Unlimited)8EAR99-MOSFET (Metal Oxide)DUALGULL WING--81-2.5W Ta 5W TcSingleENHANCEMENT MODE2.5W9 nsN-ChannelSWITCHING105m Ω @ 5A, 10V4.5V @ 250μA446pF @ 50V4.6A Tc13nC @ 10V9ns100V10V±20V8 ns10 ns3.2A-20V-----NoROHS3 Compliant--FET General Purpose Power4.6A-4 mJ------
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--Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8---55°C~150°C TJTape & Reel (TR)TrenchFET®2016-Obsolete1 (Unlimited)---MOSFET (Metal Oxide)-----1-2.4W Ta 4.8W TcSingle-2.4W10 nsN-Channel-158mOhm @ 2.7A, 10V4V @ 250μA370pF @ 50V3.8A Tc11nC @ 10V10ns100V6V 10V±20V10 ns12 ns2.7A-20V-----NoROHS3 Compliant------8-SO150°C-55°C370pF158mOhm158 mΩ
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