Vishay Siliconix SI4102DY-T1-E3

SI4102DY-T1-E3 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 370pF @ 50V.This device conducts a continuous drain current (ID) of 2.7A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 12 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 158mOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 10 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.This transistor requires a drain-source voltage (Vdss) of 100V.In order to reduce power consumption, this device uses a drive voltage of 6V 10V volts (6V 10V).

SI4102DY-T1-E3 Features
a continuous drain current (ID) of 2.7A
the turn-off delay time is 12 ns
single MOSFETs transistor is 158mOhm
a 100V drain to source voltage (Vdss)


SI4102DY-T1-E3 Applications
There are a lot of Vishay Siliconix
SI4102DY-T1-E3 applications of single MOSFETs transistors.


Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching