Nexperia USA Inc. PBSS5330PA,135
- Part Number:
- PBSS5330PA,135
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 2467047-PBSS5330PA,135
- Description:
- TRANS PNP 30V 3A HUSON3
- ECAD Model:
-
- Datasheet:
- PBSS5330PA,135
Nexperia USA Inc. PBSS5330PA,135 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. PBSS5330PA,135.
- Factory Lead Time8 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case3-PowerUDFN
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2015
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishTin (Sn)
- Max Power Dissipation500mW
- Terminal PositionDUAL
- Terminal FormNO LEAD
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberPBSS5330
- Pin Count3
- JESD-30 CodeR-PDSO-N3
- Number of Elements1
- ConfigurationSINGLE
- Case ConnectionCOLLECTOR
- Power - Max500mW
- Transistor ApplicationSWITCHING
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)320mV
- Max Collector Current3A
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 3A 2V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic320mV @ 300mA, 3A
- Collector Emitter Breakdown Voltage30V
- Transition Frequency100MHz
- Max Breakdown Voltage30V
- Frequency - Transition165MHz
- Turn Off Time-Max (toff)200ns
- Turn On Time-Max (ton)70ns
- RoHS StatusROHS3 Compliant
PBSS5330PA,135 Overview
In this device, the DC current gain is 100 @ 3A 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 320mV @ 300mA, 3A.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 30V volts.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
PBSS5330PA,135 Features
the DC current gain for this device is 100 @ 3A 2V
the vce saturation(Max) is 320mV @ 300mA, 3A
a transition frequency of 100MHz
PBSS5330PA,135 Applications
There are a lot of Nexperia USA Inc.
PBSS5330PA,135 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 100 @ 3A 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 320mV @ 300mA, 3A.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 30V volts.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
PBSS5330PA,135 Features
the DC current gain for this device is 100 @ 3A 2V
the vce saturation(Max) is 320mV @ 300mA, 3A
a transition frequency of 100MHz
PBSS5330PA,135 Applications
There are a lot of Nexperia USA Inc.
PBSS5330PA,135 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
PBSS5330PA,135 More Descriptions
PBSS5330PA - 30 V, 3 A PNP low VCEsat (BISS) transistor
Transistor, Bipolar Rohs Compliant: Yes |Nexperia PBSS5330PA,135
30V 1.25W 3A 160@3A,2V 165MHz 230mV@3A,300mA PNP 150¡æ@(Tj) SOT-1061 Bipolar Transistors - BJT ROHS
Transistor, Bipolar Rohs Compliant: Yes |Nexperia PBSS5330PA,135
30V 1.25W 3A 160@3A,2V 165MHz 230mV@3A,300mA PNP 150¡æ@(Tj) SOT-1061 Bipolar Transistors - BJT ROHS
The three parts on the right have similar specifications to PBSS5330PA,135.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeNumber of ElementsConfigurationCase ConnectionPower - MaxTransistor ApplicationPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyMax Breakdown VoltageFrequency - TransitionTurn Off Time-Max (toff)Turn On Time-Max (ton)RoHS StatusContact PlatingNumber of PinsWeightTerminationECCN CodeFrequencyElement ConfigurationPower DissipationGain Bandwidth ProductCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCRadiation HardeningLead FreeView Compare
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PBSS5330PA,1358 WeeksSurface MountSurface Mount3-PowerUDFNSILICON150°C TJTape & Reel (TR)2015e3Active1 (Unlimited)3Tin (Sn)500mWDUALNO LEADNOT SPECIFIEDNOT SPECIFIEDPBSS53303R-PDSO-N31SINGLECOLLECTOR500mWSWITCHINGPNPPNP320mV3A100 @ 3A 2V100nA ICBO320mV @ 300mA, 3A30V100MHz30V165MHz200ns70nsROHS3 Compliant------------------- -
4 WeeksSurface MountSurface MountTO-243AASILICON150°C TJTape & Reel (TR)2006e3Active1 (Unlimited)3-2.1W-FLAT--PBSS304P3-1-COLLECTOR-SWITCHINGPNPPNP60V4.2A150 @ 2A 2V100nA ICBO310mV @ 210mA, 4.2A60V130MHz60V--80nsROHS3 CompliantTin34.535924gSMD/SMTEAR99130MHzSingle2.1W130MHz60V5V2006.35mm12.7mm6.35mmNo SVHCNoLead Free
-
4 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-3SILICON150°C TJCut Tape (CT)2010e3Active1 (Unlimited)3-1.1WDUALGULL WING--PBSS4041P3-1---SWITCHINGPNPPNP60V2.7A150 @ 1A 2V100nA360mV @ 300mA, 3A60V150MHz60V---ROHS3 CompliantTin3---150MHzSingle1.1W150MHz60V5V35---No SVHCNoLead Free
-
4 WeeksSurface MountSurface MountTO-243AA-150°C TJTape & Reel (TR)2010e3Active1 (Unlimited)-Tin (Sn)2.5W----PBSS4032P3----2.5W--PNP400mV4.2A150 @ 2A 2V100nA400mV @ 200mA, 4A30V-30V---ROHS3 Compliant-4----Single-115MHz30V-5V200----No-
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