Nexperia USA Inc. PBSS304PX,115
- Part Number:
- PBSS304PX,115
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 2845747-PBSS304PX,115
- Description:
- TRANS PNP 60V 4.2A SOT89
- ECAD Model:
-
- Datasheet:
- PBSS304PX,115
Nexperia USA Inc. PBSS304PX,115 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. PBSS304PX,115.
- Factory Lead Time4 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-243AA
- Number of Pins3
- Weight4.535924g
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2006
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- TerminationSMD/SMT
- ECCN CodeEAR99
- Max Power Dissipation2.1W
- Terminal FormFLAT
- Frequency130MHz
- Base Part NumberPBSS304P
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation2.1W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product130MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)60V
- Max Collector Current4.2A
- DC Current Gain (hFE) (Min) @ Ic, Vce150 @ 2A 2V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic310mV @ 210mA, 4.2A
- Collector Emitter Breakdown Voltage60V
- Transition Frequency130MHz
- Max Breakdown Voltage60V
- Collector Base Voltage (VCBO)60V
- Emitter Base Voltage (VEBO)5V
- hFE Min200
- Turn On Time-Max (ton)80ns
- Height6.35mm
- Length12.7mm
- Width6.35mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
PBSS304PX,115 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 150 @ 2A 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 310mV @ 210mA, 4.2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 130MHz.Single BJT transistor can take a breakdown input voltage of 60V volts.During maximum operation, collector current can be as low as 4.2A volts.
PBSS304PX,115 Features
the DC current gain for this device is 150 @ 2A 2V
the vce saturation(Max) is 310mV @ 210mA, 4.2A
the emitter base voltage is kept at 5V
a transition frequency of 130MHz
PBSS304PX,115 Applications
There are a lot of Nexperia USA Inc.
PBSS304PX,115 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 150 @ 2A 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 310mV @ 210mA, 4.2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 130MHz.Single BJT transistor can take a breakdown input voltage of 60V volts.During maximum operation, collector current can be as low as 4.2A volts.
PBSS304PX,115 Features
the DC current gain for this device is 150 @ 2A 2V
the vce saturation(Max) is 310mV @ 210mA, 4.2A
the emitter base voltage is kept at 5V
a transition frequency of 130MHz
PBSS304PX,115 Applications
There are a lot of Nexperia USA Inc.
PBSS304PX,115 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
PBSS304PX,115 More Descriptions
PBSS304PX Series 60 V 4.2 A SMT PNP Low VCEsat (BISS) Transistor - SOT-89
Small Signal Bipolar Transistor, 4.2A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon
Trans GP BJT PNP 60V 4.2A 2100mW Automotive 4-Pin(3 Tab) SOT-89 T/R
60V 600mW 4.2A 100@6A2V 130MHz 220mV@4.2A210mA PNP 150¡Í@(Tj) SOT-89 Bipolar Transistors - BJT ROHS
transistor pnp-TRANSISTOR BJT-PNP
Bipolar Transistor; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-60V; Transition Frequency Typ, ft:130MHz; Power Dissipation Pd:2.1W; DC Collector Current:-4.2A; DC Current Gain Max (hfe):295 ;RoHS Compliant: Yes
TRANS PNP 60V 4.2A SOT-89; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-60V; Power Dissipation Pd:600mW; DC Collector Current:-4.2A; DC Current Gain hFE:295; Operating Temperature Range:-65°C to 150°C; Transistor Case Style:SOT-89; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:-50mV; Current Ic Continuous a Max:-500mA; Gain Bandwidth ft Typ:130MHz; Hfe Min:200; Package / Case:SOT-89; Power Dissipation Pd:600mW; Termination Type:SMD; Transistor Type:Low Saturation (BISS)
Small Signal Bipolar Transistor, 4.2A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon
Trans GP BJT PNP 60V 4.2A 2100mW Automotive 4-Pin(3 Tab) SOT-89 T/R
60V 600mW 4.2A 100@6A2V 130MHz 220mV@4.2A210mA PNP 150¡Í@(Tj) SOT-89 Bipolar Transistors - BJT ROHS
transistor pnp-TRANSISTOR BJT-PNP
Bipolar Transistor; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-60V; Transition Frequency Typ, ft:130MHz; Power Dissipation Pd:2.1W; DC Collector Current:-4.2A; DC Current Gain Max (hfe):295 ;RoHS Compliant: Yes
TRANS PNP 60V 4.2A SOT-89; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-60V; Power Dissipation Pd:600mW; DC Collector Current:-4.2A; DC Current Gain hFE:295; Operating Temperature Range:-65°C to 150°C; Transistor Case Style:SOT-89; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:-50mV; Current Ic Continuous a Max:-500mA; Gain Bandwidth ft Typ:130MHz; Hfe Min:200; Package / Case:SOT-89; Power Dissipation Pd:600mW; Termination Type:SMD; Transistor Type:Low Saturation (BISS)
The three parts on the right have similar specifications to PBSS304PX,115.
-
ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationECCN CodeMax Power DissipationTerminal FormFrequencyBase Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinTurn On Time-Max (ton)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeTerminal FinishTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Power - MaxCurrent - Collector (Ic) (Max)Supplier Device PackageMax Operating TemperatureMin Operating TemperaturePolarityVoltage - Collector Emitter Breakdown (Max)Frequency - TransitionView Compare
-
PBSS304PX,1154 WeeksTinSurface MountSurface MountTO-243AA34.535924gSILICON150°C TJTape & Reel (TR)2006e3Active1 (Unlimited)3SMD/SMTEAR992.1WFLAT130MHzPBSS304P31Single2.1WCOLLECTORSWITCHING130MHzPNPPNP60V4.2A150 @ 2A 2V100nA ICBO310mV @ 210mA, 4.2A60V130MHz60V60V5V20080ns6.35mm12.7mm6.35mmNo SVHCNoROHS3 CompliantLead Free------------- -
4 Weeks-Surface MountSurface MountSC-74, SOT-4576-SILICON150°C TJTape & Reel (TR)2007e3Active1 (Unlimited)6-EAR992.5WGULL WING140MHzPBSS303N61Single2.5W-SWITCHING140MHzNPNNPN60V3A345 @ 500mA 2V100nA515mV @ 600mA, 6A60V140MHz60V60V5V-----No SVHCNoROHS3 CompliantLead FreeTin (Sn)DUAL260301.1W1A------
-
4 Weeks-Surface MountSurface MountTO-261-4, TO-261AA44.535924gSILICON150°C TJTape & Reel (TR)2009e3Active1 (Unlimited)4SMD/SMTEAR992WGULL WING110MHzPBSS306N41Single700mWCOLLECTORSWITCHING110MHzNPNNPN100V5.1A100 @ 2A 2V100nA ICBO300mV @ 255mA, 5.1A100V110MHz100V100V5V200-6.35mm6.35mm6.35mmNo SVHCNoROHS3 CompliantLead FreeTin (Sn)DUAL--2W-------
-
4 Weeks-Surface MountSurface MountSC-74, SOT-4576--150°C TJTape & Reel (TR)2007-Active1 (Unlimited)---1.1W-100MHzPBSS301N-1Single2.5W--100MHz-NPN20V4A250 @ 2A 2V100nA420mV @ 600mA, 6A20V-20V20V5V100-----NoROHS3 CompliantLead Free----1.1W4A6-TSOP150°C-65°CNPN20V100MHz
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
20 December 2023
1N4007 Diode Characteristics and Application Guide
Ⅰ. Introduction of 1N4007Ⅱ. Naming rules of 1N4007 diodeⅢ. Technical parameters of 1N4007 diodeⅣ. Can we use 1N4004 instead of 1N4007?Ⅴ. 1N4007 diode principle of operationⅥ. Electrical characteristic... -
21 December 2023
Comprehensive Exploration of BC547 Transistor: Advantages, Uses, Specifications and Working Status
Ⅰ. BC547 descriptionⅡ. What are the advantages of BC547 transistor?Ⅲ. BC547 application circuitⅣ. Specifications of BC547Ⅴ. Working status of BC547 transistorⅥ. Absolute maximum ratings of BC547Ⅶ. What are... -
21 December 2023
Exploring the PC817 Optocoupler: Working Principle, Package, Manufacturer and More
Ⅰ. What is PC817 optocoupler?Ⅱ. How PC817 optocoupler works?Ⅲ. Where can we use PC817 optocoupler?Ⅳ. PC817 optocoupler packageⅤ. How to measure the quality of PC817?Ⅵ. Manufacturer of PC817... -
22 December 2023
STM32F429IGT6 Microcontroller: Feature-Rich Embedded System Design
Ⅰ. What is STM32F429IGT6?Ⅱ. Application fields of STM32F429IGT6Ⅲ. Naming rules of STM32F429IGT6Ⅳ. Precautions for using STM32F429IGT6Ⅴ. STM32F429IGT6 characteristicsⅥ. Power supply diagram of STM32F429IGT6Ⅶ. Specifications of STM32F429IGT6Ⅷ. How to...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.