Nexperia USA Inc. PBSS306NZ,135
- Part Number:
- PBSS306NZ,135
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 2845402-PBSS306NZ,135
- Description:
- TRANS NPN 100v 5.1A SOT-223
- ECAD Model:
-
- Datasheet:
- PBSS306NZ,135
Nexperia USA Inc. PBSS306NZ,135 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. PBSS306NZ,135.
- Factory Lead Time4 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-261-4, TO-261AA
- Number of Pins4
- Weight4.535924g
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2009
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- TerminationSMD/SMT
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Max Power Dissipation2W
- Terminal PositionDUAL
- Terminal FormGULL WING
- Frequency110MHz
- Base Part NumberPBSS306N
- Pin Count4
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation700mW
- Case ConnectionCOLLECTOR
- Power - Max2W
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product110MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)100V
- Max Collector Current5.1A
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 2A 2V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic300mV @ 255mA, 5.1A
- Collector Emitter Breakdown Voltage100V
- Transition Frequency110MHz
- Max Breakdown Voltage100V
- Collector Base Voltage (VCBO)100V
- Emitter Base Voltage (VEBO)5V
- hFE Min200
- Height6.35mm
- Length6.35mm
- Width6.35mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
PBSS306NZ,135 Overview
DC current gain in this device equals 100 @ 2A 2V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 300mV @ 255mA, 5.1A.An emitter's base voltage can be kept at 5V to gain high efficiency.As a result, the part has a transition frequency of 110MHz.Breakdown input voltage is 100V volts.In extreme cases, the collector current can be as low as 5.1A volts.
PBSS306NZ,135 Features
the DC current gain for this device is 100 @ 2A 2V
the vce saturation(Max) is 300mV @ 255mA, 5.1A
the emitter base voltage is kept at 5V
a transition frequency of 110MHz
PBSS306NZ,135 Applications
There are a lot of Nexperia USA Inc.
PBSS306NZ,135 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain in this device equals 100 @ 2A 2V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 300mV @ 255mA, 5.1A.An emitter's base voltage can be kept at 5V to gain high efficiency.As a result, the part has a transition frequency of 110MHz.Breakdown input voltage is 100V volts.In extreme cases, the collector current can be as low as 5.1A volts.
PBSS306NZ,135 Features
the DC current gain for this device is 100 @ 2A 2V
the vce saturation(Max) is 300mV @ 255mA, 5.1A
the emitter base voltage is kept at 5V
a transition frequency of 110MHz
PBSS306NZ,135 Applications
There are a lot of Nexperia USA Inc.
PBSS306NZ,135 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
PBSS306NZ,135 More Descriptions
PBSS306NZ Series 100 V 5.1 A SMT NPN Low VCEsat (BISS) Transistor - SOT-223
Small Signal Bipolar Transistor, 5.1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon
Trans GP BJT NPN 100V 5.1A 2000mW Automotive 4-Pin(3 Tab) SC-73 T/R
100V 700mW 5.1A 60@5A,2V 110MHz 215mV@5.1A,255mA NPN 150¡æ@(Tj) SOT-223 Bipolar Transistors - BJT ROHS
Bipolar Transistor; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency Typ, ft:110MHz; Power Dissipation Pd:2W; DC Collector Current:5.1A; DC Current Gain Max (hfe):330 ;RoHS Compliant: Yes
TRANS NPN 100V 5.1A SOT-223; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Power Dissipation Pd:700mW; DC Collector Current:5.1A; DC Current Gain hFE:330; Operating Temperature Range:-65°C to 150°C; Transistor Case Style:SOT-223; No. of Pins:4; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:40mV; Current Ic Continuous a Max:500mA; Gain Bandwidth ft Typ:110MHz; Hfe Min:200; Package / Case:SOT-223; Power Dissipation Pd:700mW; Termination Type:SMD; Transistor Type:Low Saturation (BISS)
Small Signal Bipolar Transistor, 5.1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon
Trans GP BJT NPN 100V 5.1A 2000mW Automotive 4-Pin(3 Tab) SC-73 T/R
100V 700mW 5.1A 60@5A,2V 110MHz 215mV@5.1A,255mA NPN 150¡æ@(Tj) SOT-223 Bipolar Transistors - BJT ROHS
Bipolar Transistor; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency Typ, ft:110MHz; Power Dissipation Pd:2W; DC Collector Current:5.1A; DC Current Gain Max (hfe):330 ;RoHS Compliant: Yes
TRANS NPN 100V 5.1A SOT-223; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Power Dissipation Pd:700mW; DC Collector Current:5.1A; DC Current Gain hFE:330; Operating Temperature Range:-65°C to 150°C; Transistor Case Style:SOT-223; No. of Pins:4; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:40mV; Current Ic Continuous a Max:500mA; Gain Bandwidth ft Typ:110MHz; Hfe Min:200; Package / Case:SOT-223; Power Dissipation Pd:700mW; Termination Type:SMD; Transistor Type:Low Saturation (BISS)
The three parts on the right have similar specifications to PBSS306NZ,135.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationECCN CodeTerminal FinishMax Power DissipationTerminal PositionTerminal FormFrequencyBase Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationCase ConnectionPower - MaxTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeJESD-30 CodeTurn Off Time-Max (toff)Turn On Time-Max (ton)View Compare
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PBSS306NZ,1354 WeeksSurface MountSurface MountTO-261-4, TO-261AA44.535924gSILICON150°C TJTape & Reel (TR)2009e3Active1 (Unlimited)4SMD/SMTEAR99Tin (Sn)2WDUALGULL WING110MHzPBSS306N41Single700mWCOLLECTOR2WSWITCHING110MHzNPNNPN100V5.1A100 @ 2A 2V100nA ICBO300mV @ 255mA, 5.1A100V110MHz100V100V5V2006.35mm6.35mm6.35mmNo SVHCNoROHS3 CompliantLead Free---- -
8 WeeksSurface MountSurface MountSC-101, SOT-8833-SILICON150°C TJTape & Reel (TR)2002e3Active1 (Unlimited)3-EAR99Tin (Sn)430mWBOTTOM-300MHzPBSS354031Single430mWCOLLECTOR-SWITCHING300MHzPNPPNP40V500mA150 @ 100mA 2V100nA ICBO350mV @ 50mA, 500mA40V300MHz40V40V6V-----NoROHS3 CompliantLead Free---
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4 WeeksSurface MountSurface MountTO-243AA4-SILICON150°C TJTape & Reel (TR)2009e3Active1 (Unlimited)3-EAR99Tin (Sn)2.1W-FLAT-PBSS303P31Single-COLLECTOR2.1WSWITCHING130MHzPNPPNP30V5.1A200 @ 2A 2V100nA ICBO230mV @ 255mA, 5.1A30V130MHz30V30V5V-----NoROHS3 CompliantLead FreeR-PSSO-F3320ns70ns
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4 WeeksSurface MountSurface MountTO-243AA4--150°C TJTape & Reel (TR)2010e3Active1 (Unlimited)---Tin (Sn)2.5W---PBSS4032P3-Single--2.5W-115MHz-PNP400mV4.2A150 @ 2A 2V100nA400mV @ 200mA, 4A30V-30V30V-5V200----NoROHS3 Compliant----
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