Nexperia USA Inc. PBSS2540MB,315
- Part Number:
- PBSS2540MB,315
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 2845757-PBSS2540MB,315
- Description:
- TRANS NPN 40V 0.5A 3DFN
- ECAD Model:
-
- Datasheet:
- PBSS2540MB,315
Nexperia USA Inc. PBSS2540MB,315 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. PBSS2540MB,315.
- Factory Lead Time8 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case3-XFDFN
- Number of Pins3
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2016
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Terminal FinishTin (Sn)
- Max Power Dissipation590mW
- Base Part NumberPBSS2540
- Pin Count3
- Element ConfigurationSingle
- Power - Max250mW
- Gain Bandwidth Product450MHz
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)40V
- Max Collector Current500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 10mA 2V
- Current - Collector Cutoff (Max)100μA ICBO
- Vce Saturation (Max) @ Ib, Ic50mV @ 500μA, 10mA
- Collector Emitter Breakdown Voltage40V
- Collector Emitter Saturation Voltage250mV
- Max Breakdown Voltage40V
- Collector Base Voltage (VCBO)40V
- Emitter Base Voltage (VEBO)6V
- hFE Min200
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
PBSS2540MB,315 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 10mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 250mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 50mV @ 500μA, 10mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Single BJT transistor can take a breakdown input voltage of 40V volts.During maximum operation, collector current can be as low as 500mA volts.
PBSS2540MB,315 Features
the DC current gain for this device is 200 @ 10mA 2V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 50mV @ 500μA, 10mA
the emitter base voltage is kept at 6V
PBSS2540MB,315 Applications
There are a lot of Nexperia USA Inc.
PBSS2540MB,315 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 10mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 250mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 50mV @ 500μA, 10mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Single BJT transistor can take a breakdown input voltage of 40V volts.During maximum operation, collector current can be as low as 500mA volts.
PBSS2540MB,315 Features
the DC current gain for this device is 200 @ 10mA 2V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 50mV @ 500μA, 10mA
the emitter base voltage is kept at 6V
PBSS2540MB,315 Applications
There are a lot of Nexperia USA Inc.
PBSS2540MB,315 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
PBSS2540MB,315 More Descriptions
PBSS2540MB Series 40 V 0.5 A NPN Low VCEsat (BISS) Transistor - DFN1006B-3
Trans, Bipolar, Npn, 40V, 0.5A, Dfn1006B Rohs Compliant: Yes |Nexperia PBSS2540MB,315
Transistor, BIPOLAR, NPN, 40V, 0.5A, DFN1006B;
Trans GP BJT NPN 40V 0.5A 590mW Automotive 3-Pin DFN-B T/R
Trans, Bipolar, Npn, 40V, 0.5A, Dfn1006B Rohs Compliant: Yes |Nexperia PBSS2540MB,315
Transistor, BIPOLAR, NPN, 40V, 0.5A, DFN1006B;
Trans GP BJT NPN 40V 0.5A 590mW Automotive 3-Pin DFN-B T/R
The three parts on the right have similar specifications to PBSS2540MB,315.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Terminal FinishMax Power DissipationBase Part NumberPin CountElement ConfigurationPower - MaxGain Bandwidth ProductTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinRadiation HardeningRoHS StatusTransistor Element MaterialNumber of TerminationsECCN CodeTerminal PositionFrequencyNumber of ElementsPower DissipationCase ConnectionTransistor ApplicationPolarity/Channel TypeTransition FrequencyLead FreeSupplier Device PackageMax Operating TemperatureMin Operating TemperaturePolarityVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionTerminal FormJESD-30 CodeTurn Off Time-Max (toff)Turn On Time-Max (ton)View Compare
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PBSS2540MB,3158 WeeksSurface MountSurface Mount3-XFDFN3150°C TJTape & Reel (TR)2016e3Active1 (Unlimited)Tin (Sn)590mWPBSS25403Single250mW450MHzNPN40V500mA200 @ 10mA 2V100μA ICBO50mV @ 500μA, 10mA40V250mV40V40V6V200NoROHS3 Compliant------------------------ -
8 WeeksSurface MountSurface MountSC-101, SOT-8833150°C TJTape & Reel (TR)2002e3Active1 (Unlimited)Tin (Sn)430mWPBSS35403Single-300MHzPNP40V500mA150 @ 100mA 2V100nA ICBO350mV @ 50mA, 500mA40V-40V40V6V-NoROHS3 CompliantSILICON3EAR99BOTTOM300MHz1430mWCOLLECTORSWITCHINGPNP300MHzLead Free-----------
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4 WeeksSurface MountSurface MountSC-74, SOT-4576150°C TJTape & Reel (TR)2007-Active1 (Unlimited)-1.1WPBSS301N-Single1.1W100MHzNPN20V4A250 @ 2A 2V100nA420mV @ 600mA, 6A20V-20V20V5V100NoROHS3 Compliant----100MHz12.5W----Lead Free6-TSOP150°C-65°CNPN20V4A100MHz----
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4 WeeksSurface MountSurface MountTO-243AA4150°C TJTape & Reel (TR)2009e3Active1 (Unlimited)Tin (Sn)2.1WPBSS303P3Single2.1W130MHzPNP30V5.1A200 @ 2A 2V100nA ICBO230mV @ 255mA, 5.1A30V-30V30V5V-NoROHS3 CompliantSILICON3EAR99--1-COLLECTORSWITCHINGPNP130MHzLead Free-------FLATR-PSSO-F3320ns70ns
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