Nexperia USA Inc. PBSS3540M,315
- Part Number:
- PBSS3540M,315
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 2845671-PBSS3540M,315
- Description:
- TRANS PNP 40V 0.5A SOT883
- ECAD Model:
-
- Datasheet:
- PBSS3540M
Nexperia USA Inc. PBSS3540M,315 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. PBSS3540M,315.
- Factory Lead Time8 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSC-101, SOT-883
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2002
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Max Power Dissipation430mW
- Terminal PositionBOTTOM
- Frequency300MHz
- Base Part NumberPBSS3540
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation430mW
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product300MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)40V
- Max Collector Current500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce150 @ 100mA 2V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic350mV @ 50mA, 500mA
- Collector Emitter Breakdown Voltage40V
- Transition Frequency300MHz
- Max Breakdown Voltage40V
- Collector Base Voltage (VCBO)40V
- Emitter Base Voltage (VEBO)6V
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
PBSS3540M,315 Overview
This device has a DC current gain of 150 @ 100mA 2V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 6V to achieve high efficiency.In this part, there is a transition frequency of 300MHz.As a result, it can handle voltages as low as 40V volts.The maximum collector current is 500mA volts.
PBSS3540M,315 Features
the DC current gain for this device is 150 @ 100mA 2V
the vce saturation(Max) is 350mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz
PBSS3540M,315 Applications
There are a lot of Nexperia USA Inc.
PBSS3540M,315 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 150 @ 100mA 2V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 6V to achieve high efficiency.In this part, there is a transition frequency of 300MHz.As a result, it can handle voltages as low as 40V volts.The maximum collector current is 500mA volts.
PBSS3540M,315 Features
the DC current gain for this device is 150 @ 100mA 2V
the vce saturation(Max) is 350mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz
PBSS3540M,315 Applications
There are a lot of Nexperia USA Inc.
PBSS3540M,315 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
PBSS3540M,315 More Descriptions
PBSS3540M Series 40 V 0.5 A PNP Low VCEsat (BISS) Transistor - DFN1006-3
Small Signal Bipolar Transistor, 0.5A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon
Trans, Bipolar, Pnp, 40V, 0.5A, Dfn1006 Rohs Compliant: Yes |Nexperia PBSS3540M,315
Transistor, BIPOLAR, PNP, 40V, 0.5A, DFN1006;
Trans GP BJT PNP 40V 0.5A 3-Pin DFN T/R
Small Signal Bipolar Transistor, 0.5A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon
Trans, Bipolar, Pnp, 40V, 0.5A, Dfn1006 Rohs Compliant: Yes |Nexperia PBSS3540M,315
Transistor, BIPOLAR, PNP, 40V, 0.5A, DFN1006;
Trans GP BJT PNP 40V 0.5A 3-Pin DFN T/R
The three parts on the right have similar specifications to PBSS3540M,315.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishMax Power DissipationTerminal PositionFrequencyBase Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)Radiation HardeningRoHS StatusLead FreeTerminal FormJESD-30 CodePower - MaxTurn Off Time-Max (toff)Turn On Time-Max (ton)Contact PlatinghFE MinREACH SVHCView Compare
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PBSS3540M,3158 WeeksSurface MountSurface MountSC-101, SOT-8833SILICON150°C TJTape & Reel (TR)2002e3Active1 (Unlimited)3EAR99Tin (Sn)430mWBOTTOM300MHzPBSS354031Single430mWCOLLECTORSWITCHING300MHzPNPPNP40V500mA150 @ 100mA 2V100nA ICBO350mV @ 50mA, 500mA40V300MHz40V40V6VNoROHS3 CompliantLead Free--------- -
4 WeeksSurface MountSurface MountTO-243AA4SILICON150°C TJTape & Reel (TR)2009e3Active1 (Unlimited)3EAR99Tin (Sn)2.1W--PBSS303P31Single-COLLECTORSWITCHING130MHzPNPPNP30V5.1A200 @ 2A 2V100nA ICBO230mV @ 255mA, 5.1A30V130MHz30V30V5VNoROHS3 CompliantLead FreeFLATR-PSSO-F32.1W320ns70ns---
-
4 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-33SILICON150°C TJCut Tape (CT)2010e3Active1 (Unlimited)3--1.1WDUAL150MHzPBSS4041P31Single1.1W-SWITCHING150MHzPNPPNP60V2.7A150 @ 1A 2V100nA360mV @ 300mA, 3A60V150MHz60V60V5VNoROHS3 CompliantLead FreeGULL WING----Tin35No SVHC
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4 WeeksSurface MountSurface MountTO-243AA4-150°C TJTape & Reel (TR)2010e3Active1 (Unlimited)--Tin (Sn)2.5W--PBSS4032P3-Single---115MHz-PNP400mV4.2A150 @ 2A 2V100nA400mV @ 200mA, 4A30V-30V30V-5VNoROHS3 Compliant---2.5W---200-
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