Nexperia USA Inc. PBSS303PX,115
- Part Number:
- PBSS303PX,115
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 2845389-PBSS303PX,115
- Description:
- TRANS PNP 30V 5.1A SOT89
- ECAD Model:
-
- Datasheet:
- PBSS303PX,115
Nexperia USA Inc. PBSS303PX,115 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. PBSS303PX,115.
- Factory Lead Time4 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-243AA
- Number of Pins4
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2009
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Max Power Dissipation2.1W
- Terminal FormFLAT
- Base Part NumberPBSS303P
- Pin Count3
- JESD-30 CodeR-PSSO-F3
- Number of Elements1
- Element ConfigurationSingle
- Case ConnectionCOLLECTOR
- Power - Max2.1W
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product130MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)30V
- Max Collector Current5.1A
- DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 2A 2V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic230mV @ 255mA, 5.1A
- Collector Emitter Breakdown Voltage30V
- Transition Frequency130MHz
- Max Breakdown Voltage30V
- Collector Base Voltage (VCBO)30V
- Emitter Base Voltage (VEBO)5V
- Turn Off Time-Max (toff)320ns
- Turn On Time-Max (ton)70ns
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
PBSS303PX,115 Overview
DC current gain in this device equals 200 @ 2A 2V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 230mV @ 255mA, 5.1A.An emitter's base voltage can be kept at 5V to gain high efficiency.As a result, the part has a transition frequency of 130MHz.Breakdown input voltage is 30V volts.In extreme cases, the collector current can be as low as 5.1A volts.
PBSS303PX,115 Features
the DC current gain for this device is 200 @ 2A 2V
the vce saturation(Max) is 230mV @ 255mA, 5.1A
the emitter base voltage is kept at 5V
a transition frequency of 130MHz
PBSS303PX,115 Applications
There are a lot of Nexperia USA Inc.
PBSS303PX,115 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain in this device equals 200 @ 2A 2V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 230mV @ 255mA, 5.1A.An emitter's base voltage can be kept at 5V to gain high efficiency.As a result, the part has a transition frequency of 130MHz.Breakdown input voltage is 30V volts.In extreme cases, the collector current can be as low as 5.1A volts.
PBSS303PX,115 Features
the DC current gain for this device is 200 @ 2A 2V
the vce saturation(Max) is 230mV @ 255mA, 5.1A
the emitter base voltage is kept at 5V
a transition frequency of 130MHz
PBSS303PX,115 Applications
There are a lot of Nexperia USA Inc.
PBSS303PX,115 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
PBSS303PX,115 More Descriptions
Trans GP BJT PNP 30V 5.1A Automotive 4-Pin(3 Tab) SOT-89 T/R
PBSS303PX - 30 V, 5.1 A PNP low VCEsat (BISS) transistor
Pbss303Px/Sot89/Mpt3 Rohs Compliant: Yes |Nexperia PBSS303PX,115
NOW NEXPERIA PBSS303PX - SMALL S
PBSS303PX - 30 V, 5.1 A PNP low VCEsat (BISS) transistor
Pbss303Px/Sot89/Mpt3 Rohs Compliant: Yes |Nexperia PBSS303PX,115
NOW NEXPERIA PBSS303PX - SMALL S
The three parts on the right have similar specifications to PBSS303PX,115.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishMax Power DissipationTerminal FormBase Part NumberPin CountJESD-30 CodeNumber of ElementsElement ConfigurationCase ConnectionPower - MaxTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)Turn Off Time-Max (toff)Turn On Time-Max (ton)Radiation HardeningRoHS StatusLead FreeContact PlatingWeightTerminationFrequencyPower DissipationhFE MinHeightLengthWidthREACH SVHCTerminal PositionView Compare
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PBSS303PX,1154 WeeksSurface MountSurface MountTO-243AA4SILICON150°C TJTape & Reel (TR)2009e3Active1 (Unlimited)3EAR99Tin (Sn)2.1WFLATPBSS303P3R-PSSO-F31SingleCOLLECTOR2.1WSWITCHING130MHzPNPPNP30V5.1A200 @ 2A 2V100nA ICBO230mV @ 255mA, 5.1A30V130MHz30V30V5V320ns70nsNoROHS3 CompliantLead Free------------ -
4 WeeksSurface MountSurface MountTO-243AA3SILICON150°C TJTape & Reel (TR)2006e3Active1 (Unlimited)3EAR99-2.1WFLATPBSS304P3-1SingleCOLLECTOR-SWITCHING130MHzPNPPNP60V4.2A150 @ 2A 2V100nA ICBO310mV @ 210mA, 4.2A60V130MHz60V60V5V-80nsNoROHS3 CompliantLead FreeTin4.535924gSMD/SMT130MHz2.1W2006.35mm12.7mm6.35mmNo SVHC-
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4 WeeksSurface MountSurface MountTO-261-4, TO-261AA4SILICON150°C TJTape & Reel (TR)2009e3Active1 (Unlimited)4EAR99Tin (Sn)2WGULL WINGPBSS306N4-1SingleCOLLECTOR2WSWITCHING110MHzNPNNPN100V5.1A100 @ 2A 2V100nA ICBO300mV @ 255mA, 5.1A100V110MHz100V100V5V--NoROHS3 CompliantLead Free-4.535924gSMD/SMT110MHz700mW2006.35mm6.35mm6.35mmNo SVHCDUAL
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4 WeeksSurface MountSurface MountTO-243AA4-150°C TJTape & Reel (TR)2010e3Active1 (Unlimited)--Tin (Sn)2.5W-PBSS4032P3--Single-2.5W-115MHz-PNP400mV4.2A150 @ 2A 2V100nA400mV @ 200mA, 4A30V-30V30V-5V--NoROHS3 Compliant------200-----
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