Nexperia USA Inc. PBSS4032PZ,115
- Part Number:
- PBSS4032PZ,115
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 2846013-PBSS4032PZ,115
- Description:
- TRANS PNP 30V 4.4A SOT223
- ECAD Model:
-
- Datasheet:
- PBSS4032PZ,115
Nexperia USA Inc. PBSS4032PZ,115 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. PBSS4032PZ,115.
- Factory Lead Time4 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-261-4, TO-261AA
- Number of Pins4
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2010
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Terminal FinishTin (Sn)
- Max Power Dissipation2W
- Frequency130MHz
- Base Part NumberPBSS4032P
- Pin Count4
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation2W
- Gain Bandwidth Product130MHz
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)30V
- Max Collector Current4.4A
- DC Current Gain (hFE) (Min) @ Ic, Vce150 @ 2A 2V
- Current - Collector Cutoff (Max)100nA
- Vce Saturation (Max) @ Ib, Ic400mV @ 200mA, 4A
- Collector Emitter Breakdown Voltage30V
- Max Breakdown Voltage30V
- Collector Base Voltage (VCBO)30V
- Emitter Base Voltage (VEBO)-5V
- hFE Min200
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
PBSS4032PZ,115 Overview
This device has a DC current gain of 150 @ 2A 2V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 400mV @ 200mA, 4A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.A breakdown input voltage of 30V volts can be used.A maximum collector current of 4.4A volts is possible.
PBSS4032PZ,115 Features
the DC current gain for this device is 150 @ 2A 2V
the vce saturation(Max) is 400mV @ 200mA, 4A
the emitter base voltage is kept at -5V
PBSS4032PZ,115 Applications
There are a lot of Nexperia USA Inc.
PBSS4032PZ,115 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 150 @ 2A 2V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 400mV @ 200mA, 4A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.A breakdown input voltage of 30V volts can be used.A maximum collector current of 4.4A volts is possible.
PBSS4032PZ,115 Features
the DC current gain for this device is 150 @ 2A 2V
the vce saturation(Max) is 400mV @ 200mA, 4A
the emitter base voltage is kept at -5V
PBSS4032PZ,115 Applications
There are a lot of Nexperia USA Inc.
PBSS4032PZ,115 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
PBSS4032PZ,115 More Descriptions
PBSS4032PZ - 30 V, 4.4 A PNP low VCEsat (BISS) transistor
Trans GP BJT PNP 30V 4.4A Automotive 4-Pin(3 Tab) SC-73 T/R
30V 700mW 4.4A 100@4A,2V 110MHz 270mV@4A,200mA PNP 150¡æ@(Tj) SOT-223 Bipolar Transistors - BJT ROHS
BISS TRANSISTOR, PNP, -30V, -4.4A, 3-SOT-223; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-30V; Transition Frequency Typ ft:130MHz; Power Dissipation Pd:2W; DC Collector Current:-4.4A; DC Current Gain hFE:350 ;RoHS Compliant: Yes
Trans GP BJT PNP 30V 4.4A Automotive 4-Pin(3 Tab) SC-73 T/R
30V 700mW 4.4A 100@4A,2V 110MHz 270mV@4A,200mA PNP 150¡æ@(Tj) SOT-223 Bipolar Transistors - BJT ROHS
BISS TRANSISTOR, PNP, -30V, -4.4A, 3-SOT-223; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-30V; Transition Frequency Typ ft:130MHz; Power Dissipation Pd:2W; DC Collector Current:-4.4A; DC Current Gain hFE:350 ;RoHS Compliant: Yes
The three parts on the right have similar specifications to PBSS4032PZ,115.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Terminal FinishMax Power DissipationFrequencyBase Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationGain Bandwidth ProductTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinRadiation HardeningRoHS StatusWeightTransistor Element MaterialNumber of TerminationsTerminationECCN CodeTerminal PositionTerminal FormCase ConnectionPower - MaxTransistor ApplicationPolarity/Channel TypeTransition FrequencyHeightLengthWidthREACH SVHCLead FreeJESD-30 CodeTurn Off Time-Max (toff)Turn On Time-Max (ton)Contact PlatingView Compare
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PBSS4032PZ,1154 WeeksSurface MountSurface MountTO-261-4, TO-261AA4150°C TJTape & Reel (TR)2010e3Active1 (Unlimited)Tin (Sn)2W130MHzPBSS4032P41Single2W130MHzPNP30V4.4A150 @ 2A 2V100nA400mV @ 200mA, 4A30V30V30V-5V200NoROHS3 Compliant---------------------- -
4 WeeksSurface MountSurface MountTO-261-4, TO-261AA4150°C TJTape & Reel (TR)2009e3Active1 (Unlimited)Tin (Sn)2W110MHzPBSS306N41Single700mW110MHzNPN100V5.1A100 @ 2A 2V100nA ICBO300mV @ 255mA, 5.1A100V100V100V5V200NoROHS3 Compliant4.535924gSILICON4SMD/SMTEAR99DUALGULL WINGCOLLECTOR2WSWITCHINGNPN110MHz6.35mm6.35mm6.35mmNo SVHCLead Free----
-
4 WeeksSurface MountSurface MountTO-243AA4150°C TJTape & Reel (TR)2009e3Active1 (Unlimited)Tin (Sn)2.1W-PBSS303P31Single-130MHzPNP30V5.1A200 @ 2A 2V100nA ICBO230mV @ 255mA, 5.1A30V30V30V5V-NoROHS3 Compliant-SILICON3-EAR99-FLATCOLLECTOR2.1WSWITCHINGPNP130MHz----Lead FreeR-PSSO-F3320ns70ns-
-
4 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-33150°C TJCut Tape (CT)2010e3Active1 (Unlimited)-1.1W150MHzPBSS4041P31Single1.1W150MHzPNP60V2.7A150 @ 1A 2V100nA360mV @ 300mA, 3A60V60V60V5V35NoROHS3 Compliant-SILICON3--DUALGULL WING--SWITCHINGPNP150MHz---No SVHCLead Free---Tin
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