Nexperia USA Inc. PBSS4032PX,115
- Part Number:
- PBSS4032PX,115
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 2845372-PBSS4032PX,115
- Description:
- TRANS PNP 30V 4.2A SOT89
- ECAD Model:
-
- Datasheet:
- PBSS4032PX,115
Nexperia USA Inc. PBSS4032PX,115 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. PBSS4032PX,115.
- Factory Lead Time4 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-243AA
- Number of Pins4
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2010
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Terminal FinishTin (Sn)
- Max Power Dissipation2.5W
- Base Part NumberPBSS4032P
- Pin Count3
- Element ConfigurationSingle
- Power - Max2.5W
- Gain Bandwidth Product115MHz
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)400mV
- Max Collector Current4.2A
- DC Current Gain (hFE) (Min) @ Ic, Vce150 @ 2A 2V
- Current - Collector Cutoff (Max)100nA
- Vce Saturation (Max) @ Ib, Ic400mV @ 200mA, 4A
- Collector Emitter Breakdown Voltage30V
- Max Breakdown Voltage30V
- Collector Base Voltage (VCBO)30V
- Emitter Base Voltage (VEBO)-5V
- hFE Min200
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
PBSS4032PX,115 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 150 @ 2A 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 400mV @ 200mA, 4A.The emitter base voltage can be kept at -5V for high efficiency.The breakdown input voltage is 30V volts.Single BJT transistor is possible to have a collector current as low as 4.2A volts at Single BJT transistors maximum.
PBSS4032PX,115 Features
the DC current gain for this device is 150 @ 2A 2V
the vce saturation(Max) is 400mV @ 200mA, 4A
the emitter base voltage is kept at -5V
PBSS4032PX,115 Applications
There are a lot of Nexperia USA Inc.
PBSS4032PX,115 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 150 @ 2A 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 400mV @ 200mA, 4A.The emitter base voltage can be kept at -5V for high efficiency.The breakdown input voltage is 30V volts.Single BJT transistor is possible to have a collector current as low as 4.2A volts at Single BJT transistors maximum.
PBSS4032PX,115 Features
the DC current gain for this device is 150 @ 2A 2V
the vce saturation(Max) is 400mV @ 200mA, 4A
the emitter base voltage is kept at -5V
PBSS4032PX,115 Applications
There are a lot of Nexperia USA Inc.
PBSS4032PX,115 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
PBSS4032PX,115 More Descriptions
Trans GP BJT PNP 30V 4.2A Automotive 4-Pin(3 Tab) SOT-89 T/R
PBSS4032PX - 30 V, 4.2 A PNP low VCEsat (BISS) transistor
30V 600mW 4.2A 100@4A2V 115MHz 270mV@4A200mA PNP 150¡Í@(Tj) SOT-89 Bipolar Transistors - BJT ROHS
BISS TRANSISTOR, DUAL PNP, -30V, -4.2A, 3-SOT-89; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-30V; Transition Frequency Typ ft:115MHz; Power Dissipation Pd:2.5W; DC Collector Current:-4.2A; DC Current Gain hFE:350 ;RoHS Compliant: Yes
PBSS4032PX - 30 V, 4.2 A PNP low VCEsat (BISS) transistor
30V 600mW 4.2A 100@4A2V 115MHz 270mV@4A200mA PNP 150¡Í@(Tj) SOT-89 Bipolar Transistors - BJT ROHS
BISS TRANSISTOR, DUAL PNP, -30V, -4.2A, 3-SOT-89; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-30V; Transition Frequency Typ ft:115MHz; Power Dissipation Pd:2.5W; DC Collector Current:-4.2A; DC Current Gain hFE:350 ;RoHS Compliant: Yes
The three parts on the right have similar specifications to PBSS4032PX,115.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Terminal FinishMax Power DissipationBase Part NumberPin CountElement ConfigurationPower - MaxGain Bandwidth ProductTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinRadiation HardeningRoHS StatusTransistor Element MaterialNumber of TerminationsECCN CodeTerminal PositionFrequencyNumber of ElementsPower DissipationCase ConnectionTransistor ApplicationPolarity/Channel TypeTransition FrequencyLead FreeWeightTerminationTerminal FormHeightLengthWidthREACH SVHCSupplier Device PackageMax Operating TemperatureMin Operating TemperaturePolarityVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionView Compare
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PBSS4032PX,1154 WeeksSurface MountSurface MountTO-243AA4150°C TJTape & Reel (TR)2010e3Active1 (Unlimited)Tin (Sn)2.5WPBSS4032P3Single2.5W115MHzPNP400mV4.2A150 @ 2A 2V100nA400mV @ 200mA, 4A30V30V30V-5V200NoROHS3 Compliant--------------------------- -
8 WeeksSurface MountSurface MountSC-101, SOT-8833150°C TJTape & Reel (TR)2002e3Active1 (Unlimited)Tin (Sn)430mWPBSS35403Single-300MHzPNP40V500mA150 @ 100mA 2V100nA ICBO350mV @ 50mA, 500mA40V40V40V6V-NoROHS3 CompliantSILICON3EAR99BOTTOM300MHz1430mWCOLLECTORSWITCHINGPNP300MHzLead Free--------------
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4 WeeksSurface MountSurface MountTO-261-4, TO-261AA4150°C TJTape & Reel (TR)2009e3Active1 (Unlimited)Tin (Sn)2WPBSS306N4Single2W110MHzNPN100V5.1A100 @ 2A 2V100nA ICBO300mV @ 255mA, 5.1A100V100V100V5V200NoROHS3 CompliantSILICON4EAR99DUAL110MHz1700mWCOLLECTORSWITCHINGNPN110MHzLead Free4.535924gSMD/SMTGULL WING6.35mm6.35mm6.35mmNo SVHC-------
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4 WeeksSurface MountSurface MountSC-74, SOT-4576150°C TJTape & Reel (TR)2007-Active1 (Unlimited)-1.1WPBSS301N-Single1.1W100MHzNPN20V4A250 @ 2A 2V100nA420mV @ 600mA, 6A20V20V20V5V100NoROHS3 Compliant----100MHz12.5W----Lead Free-------6-TSOP150°C-65°CNPN20V4A100MHz
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