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NVMFS5C673NLT1G

ON Semiconductor NVMFS5C673NLT1G

Part Number:
NVMFS5C673NLT1G
Manufacturer:
ON Semiconductor
Ventron No:
2850216-NVMFS5C673NLT1G
Description:
MOSFET N-CH 60V SO8FL
ECAD Model:
Datasheet:
NVMFS5C673NLT1G

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Specifications
ON Semiconductor NVMFS5C673NLT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NVMFS5C673NLT1G.
  • Lifecycle Status
    ACTIVE, NOT REC (Last Updated: 1 week ago)
  • Factory Lead Time
    38 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-PowerTDFN
  • Number of Pins
    8
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2015
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Discontinued
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    5
  • Terminal Finish
    Tin (Sn)
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    FLAT
  • Reach Compliance Code
    not_compliant
  • Reference Standard
    AEC-Q101
  • JESD-30 Code
    R-PDSO-F5
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    3.6W Ta 46W Tc
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    9.2m Ω @ 25A, 10V
  • Vgs(th) (Max) @ Id
    2V @ 35μA
  • Input Capacitance (Ciss) (Max) @ Vds
    880pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs
    9.5nC @ 10V
  • Drain to Source Voltage (Vdss)
    60V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Drain-source On Resistance-Max
    0.013Ohm
  • Pulsed Drain Current-Max (IDM)
    290A
  • DS Breakdown Voltage-Min
    60V
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
NVMFS5C673NLT1G Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 880pF @ 25V.There is a peak drain current of 290A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 60V, it should remain above the 60V level.The transistor must receive a 60V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).

NVMFS5C673NLT1G Features
based on its rated peak drain current 290A.
a 60V drain to source voltage (Vdss)


NVMFS5C673NLT1G Applications
There are a lot of ON Semiconductor
NVMFS5C673NLT1G applications of single MOSFETs transistors.


DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
NVMFS5C673NLT1G More Descriptions
Single N-Channel Power MOSFET 60V, 50A, 9.2mΩ Trench 6 60V NFET
Compliant Surface Mount Lead Free 9.2 mΩ 8 NRND (Last Updated: 2 years ago) 880 pF 3.6 W
Trans MOSFET N-CH 60V 14A Automotive 5-Pin(4 Tab) SO-FL T/R
Trans MOSFET N-CH 60V 50A 5-Pin DFN EP T/R - Tape and Reel
Power Field-Effect Transistor, 60V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Product Comparison
The three parts on the right have similar specifications to NVMFS5C673NLT1G.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Terminal Finish
    Technology
    Terminal Position
    Terminal Form
    Reach Compliance Code
    Reference Standard
    JESD-30 Code
    Number of Elements
    Configuration
    Power Dissipation-Max
    Operating Mode
    Case Connection
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    RoHS Status
    Lead Free
    ECCN Code
    Subcategory
    Current - Continuous Drain (Id) @ 25°C
    Continuous Drain Current (ID)
    Surface Mount
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Element Configuration
    Power Dissipation
    Turn On Delay Time
    Halogen Free
    Rise Time
    Fall Time (Typ)
    Turn-Off Delay Time
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Avalanche Energy Rating (Eas)
    Drain to Source Breakdown Voltage
    View Compare
  • NVMFS5C673NLT1G
    NVMFS5C673NLT1G
    ON Semiconductor
    ACTIVE, NOT REC (Last Updated: 1 week ago)
    38 Weeks
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    2015
    e3
    yes
    Discontinued
    1 (Unlimited)
    5
    Tin (Sn)
    MOSFET (Metal Oxide)
    DUAL
    FLAT
    not_compliant
    AEC-Q101
    R-PDSO-F5
    1
    SINGLE WITH BUILT-IN DIODE
    3.6W Ta 46W Tc
    ENHANCEMENT MODE
    DRAIN
    N-Channel
    9.2m Ω @ 25A, 10V
    2V @ 35μA
    880pF @ 25V
    9.5nC @ 10V
    60V
    4.5V 10V
    ±20V
    0.013Ohm
    290A
    60V
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • NVMFS5C410NLWFT3G
    NVMFS5C410NLWFT3G
    ON Semiconductor
    ACTIVE (Last Updated: 1 week ago)
    38 Weeks
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    2014
    e3
    yes
    Discontinued
    1 (Unlimited)
    -
    Tin (Sn)
    MOSFET (Metal Oxide)
    -
    -
    not_compliant
    -
    -
    -
    Single
    3.8W Ta 167W Tc
    -
    -
    N-Channel
    0.9m Ω @ 50A, 10V
    2V @ 250μA
    8862pF @ 25V
    143nC @ 10V
    40V
    4.5V 10V
    ±20V
    -
    -
    -
    ROHS3 Compliant
    Lead Free
    EAR99
    FET General Purpose Power
    48A Ta 315A Tc
    315A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    NVMFS5C673NLT1G vs NVMFS5C410NLWFT3G
  • NVMFS5826NLT3G
    NVMFS5826NLT3G
    ON Semiconductor
    ACTIVE, NOT REC (Last Updated: 3 days ago)
    38 Weeks
    -
    Surface Mount
    8-PowerTDFN
    5
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    2013
    e3
    yes
    Active
    1 (Unlimited)
    5
    Tin (Sn)
    MOSFET (Metal Oxide)
    DUAL
    FLAT
    not_compliant
    -
    -
    1
    -
    3.6W Ta 39W Tc
    ENHANCEMENT MODE
    DRAIN
    N-Channel
    24m Ω @ 10A, 10V
    2.5V @ 250μA
    850pF @ 25V
    17nC @ 10V
    60V
    4.5V 10V
    ±20V
    0.032Ohm
    -
    60V
    ROHS3 Compliant
    Lead Free
    EAR99
    FET General Purpose Power
    8A Ta
    8A
    YES
    NOT SPECIFIED
    NOT SPECIFIED
    5
    Single
    3.6W
    9 ns
    Halogen Free
    32ns
    24 ns
    15 ns
    20V
    26A
    20 mJ
    -
    NVMFS5C673NLT1G vs NVMFS5826NLT3G
  • NVMFS5885NLT1G
    NVMFS5885NLT1G
    ON Semiconductor
    ACTIVE, NOT REC (Last Updated: 3 days ago)
    38 Weeks
    -
    Surface Mount
    8-PowerTDFN
    5
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    2013
    e3
    yes
    Active
    1 (Unlimited)
    -
    Tin (Sn)
    MOSFET (Metal Oxide)
    -
    -
    not_compliant
    -
    -
    -
    -
    3.7W Ta 54W Tc
    -
    -
    N-Channel
    15m Ω @ 15A, 10V
    2.5V @ 250μA
    1340pF @ 25V
    21nC @ 10V
    -
    4.5V 10V
    ±20V
    -
    -
    -
    ROHS3 Compliant
    Lead Free
    EAR99
    FET General Purpose Power
    10.2A Ta
    10.2A
    YES
    NOT SPECIFIED
    NOT SPECIFIED
    5
    Single
    54W
    10 ns
    Halogen Free
    64ns
    52 ns
    18 ns
    20V
    39A
    -
    60V
    NVMFS5C673NLT1G vs NVMFS5885NLT1G
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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