ON Semiconductor NTR1P02LT3G
- Part Number:
- NTR1P02LT3G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2480816-NTR1P02LT3G
- Description:
- MOSFET P-CH 20V 1.3A SOT23-3
- Datasheet:
- NTR1P02LT3G
ON Semiconductor NTR1P02LT3G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTR1P02LT3G.
- Lifecycle StatusACTIVE (Last Updated: 4 days ago)
- Factory Lead Time14 Weeks
- Contact PlatingTin
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Surface MountYES
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2006
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance220MOhm
- SubcategoryOther Transistors
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count3
- Number of Elements1
- Power Dissipation-Max400mW Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation400mW
- Turn On Delay Time7 ns
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs220m Ω @ 750mA, 4.5V
- Vgs(th) (Max) @ Id1.25V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds225pF @ 5V
- Current - Continuous Drain (Id) @ 25°C1.3A Ta
- Gate Charge (Qg) (Max) @ Vgs5.5nC @ 4V
- Rise Time15ns
- Drain to Source Voltage (Vdss)20V
- Drive Voltage (Max Rds On,Min Rds On)2.5V 4.5V
- Vgs (Max)±12V
- Fall Time (Typ)20 ns
- Turn-Off Delay Time18 ns
- Continuous Drain Current (ID)-1.3A
- Threshold Voltage-1V
- Gate to Source Voltage (Vgs)12V
- Drain to Source Breakdown Voltage-20V
- Nominal Vgs-1 V
- Height1.01mm
- Length3.04mm
- Width1.4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
NTR1P02LT3G Description
NTR1P02LT3G is a -20v Single P-Channel Power MOSFET. The onsemi NTR1P02LT3G typical applications are dc-dc converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, and cellular and cordless telephones. The Operating and Storage Temperature Range is between -55 and 150℃. And the Transistor NTR1P02LT3G is in the SOT-23-3 package with 400mW power dissipation.
NTR1P02LT3G Features
Low RDS(on) Provides Higher Efficiency and Extends Battery Life
Miniature SOT?23 Surface Mount Package Saves Board Space
NVTR Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable
Pb?Free and Halide?Free Packages are Available
Drain?to?Source Voltage: -20V
NTR1P02LT3G Applications
DC-DC Converters
Power Management in Portable and Battery Powered Products
Computers
Printers
PCMCIA cards
Cellular and Cordless Telephones
NTR1P02LT3G is a -20v Single P-Channel Power MOSFET. The onsemi NTR1P02LT3G typical applications are dc-dc converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, and cellular and cordless telephones. The Operating and Storage Temperature Range is between -55 and 150℃. And the Transistor NTR1P02LT3G is in the SOT-23-3 package with 400mW power dissipation.
NTR1P02LT3G Features
Low RDS(on) Provides Higher Efficiency and Extends Battery Life
Miniature SOT?23 Surface Mount Package Saves Board Space
NVTR Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable
Pb?Free and Halide?Free Packages are Available
Drain?to?Source Voltage: -20V
NTR1P02LT3G Applications
DC-DC Converters
Power Management in Portable and Battery Powered Products
Computers
Printers
PCMCIA cards
Cellular and Cordless Telephones
NTR1P02LT3G More Descriptions
P-Channel 20 V 220 mOhm 400 mW Surface Mount Power Mosfet - SOT-23
NTR1P02LT3G P-channel MOSFET Transistor, 1.3 A, 20 V, 3-Pin SOT-23 | ON Semiconductor NTR1P02LT3G
Single P-Channel Power MOSFET -20V, -1.3A, 220mΩ
Trans MOSFET P-CH 20V 1.3A 3-Pin SOT-23 T/R - Tape and Reel
MOSFET, P CHANNEL, -20V, -1.3A, SOT-23-3; Transistor Polarity: P Channel; Continuous Drain Current Id: -1.3A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.14ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage
Small Signal Field-Effect Transistor, 1.3A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
NTR1P02LT3G P-channel MOSFET Transistor, 1.3 A, 20 V, 3-Pin SOT-23 | ON Semiconductor NTR1P02LT3G
Single P-Channel Power MOSFET -20V, -1.3A, 220mΩ
Trans MOSFET P-CH 20V 1.3A 3-Pin SOT-23 T/R - Tape and Reel
MOSFET, P CHANNEL, -20V, -1.3A, SOT-23-3; Transistor Polarity: P Channel; Continuous Drain Current Id: -1.3A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.14ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage
Small Signal Field-Effect Transistor, 1.3A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
The three parts on the right have similar specifications to NTR1P02LT3G.
-
ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMounting TypePackage / CaseSurface MountNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeVoltage - Rated DCCurrent RatingTerminal FinishQualification StatusDrain Current-Max (Abs) (ID)MountHTS CodeReach Compliance CodeDrain-source On Resistance-MaxView Compare
-
NTR1P02LT3GACTIVE (Last Updated: 4 days ago)14 WeeksTinSurface MountTO-236-3, SC-59, SOT-23-3YES3SILICON-55°C~150°C TJTape & Reel (TR)2006e3yesActive1 (Unlimited)3EAR99220MOhmOther TransistorsMOSFET (Metal Oxide)DUALGULL WING2604031400mW TaSingleENHANCEMENT MODE400mW7 nsP-ChannelSWITCHING220m Ω @ 750mA, 4.5V1.25V @ 250μA225pF @ 5V1.3A Ta5.5nC @ 4V15ns20V2.5V 4.5V±12V20 ns18 ns-1.3A-1V12V-20V-1 V1.01mm3.04mm1.4mmNo SVHCNoROHS3 CompliantLead Free----------
-
ACTIVE (Last Updated: 3 days ago)14 WeeksTinSurface MountTO-236-3, SC-59, SOT-23-3YES3SILICON-55°C~150°C TJCut Tape (CT)2004e3yesActive1 (Unlimited)3EAR99220MOhmOther TransistorsMOSFET (Metal Oxide)DUALGULL WING2604031400mW TaSingleENHANCEMENT MODE400mW7 nsP-ChannelSWITCHING220m Ω @ 750mA, 4.5V1.25V @ 250μA225pF @ 5V1.3A Ta5.5nC @ 4V15ns20V2.5V 4.5V±12V15 ns18 ns1.3A-1V12V-20V-940μm2.9mm1.3mmNo SVHCNoROHS3 CompliantLead Free-20V-1.3A-------
-
---Surface MountTO-236-3, SC-59, SOT-23-3YES3SILICON-55°C~150°C TJTape & Reel (TR)2005e3yesObsolete1 (Unlimited)3EAR99-Other TransistorsMOSFET (Metal Oxide)DUALGULL WING2604031400mW TaSingleENHANCEMENT MODE400mW-P-ChannelSWITCHING180m Ω @ 1.5A, 10V2.3V @ 250μA165pF @ 5V1A Ta2.5nC @ 5V9ns-4.5V 10V±20V9 ns9 ns1A-20V-20V------RoHS CompliantLead Free-20V-1ATin (Sn)Not Qualified1A----
-
---Surface MountTO-236-3, SC-59, SOT-23-3-3SILICON-55°C~150°C TJTape & Reel (TR)2005e0-Obsolete1 (Unlimited)3EAR99-Other TransistorsMOSFET (Metal Oxide)DUALGULL WING2403031400mW TaSingleENHANCEMENT MODE400mW-P-ChannelSWITCHING180m Ω @ 1.5A, 10V2.3V @ 250μA165pF @ 5V1A Ta2.5nC @ 5V9ns-4.5V 10V±20V9 ns9 ns1A-20V-20V------Non-RoHS CompliantContains Lead-20V-1ATin/Lead (Sn/Pb)Not Qualified1ASurface Mount8541.21.00.95not_compliant0.18Ohm
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
06 September 2023
All You Need to Know About MPS2222A
Ⅰ. Overview of MPS2222AMPS2222A is an NPN transistor produced by Fairchild Semiconductor. Its main features include power dissipation of 0.625W; collector current of 0.6A; maximum withstand voltage of... -
06 September 2023
A4988 Characteristics, Application and Basic Principle
A4988 is an efficient and commonly used stepper motor driver chip, widely used in 3D printing and CNC machine tools and other fields. We will discuss in depth... -
07 September 2023
What Is The Difference Between NE5532 And RC4558D?
Ⅰ. Overview of NE5532NE5532 is a dual operational amplifier chip with excellent performance and low noise characteristics. Its circuit design is similar to that of a common operational... -
07 September 2023
TPC8129 Internal Circuit, Specifications, Application and Marking
Ⅰ. Overview of TPC8129TPC8129 is a product of Toshiba, a Japanese comprehensive electronic and electrical company. It is a chip for LED driver circuits and is mainly used...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.