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NTR1P02LT1G

ON Semiconductor NTR1P02LT1G

Part Number:
NTR1P02LT1G
Manufacturer:
ON Semiconductor
Ventron No:
3070146-NTR1P02LT1G
Description:
MOSFET P-CH 20V 1.3A SOT-23
ECAD Model:
Datasheet:
NTR1P02LT1G

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Specifications
ON Semiconductor NTR1P02LT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTR1P02LT1G.
  • Lifecycle Status
    ACTIVE (Last Updated: 3 days ago)
  • Factory Lead Time
    14 Weeks
  • Contact Plating
    Tin
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Surface Mount
    YES
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Cut Tape (CT)
  • Published
    2004
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Resistance
    220MOhm
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    -20V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    -1.3A
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    3
  • Number of Elements
    1
  • Power Dissipation-Max
    400mW Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    400mW
  • Turn On Delay Time
    7 ns
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    220m Ω @ 750mA, 4.5V
  • Vgs(th) (Max) @ Id
    1.25V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    225pF @ 5V
  • Current - Continuous Drain (Id) @ 25°C
    1.3A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    5.5nC @ 4V
  • Rise Time
    15ns
  • Drain to Source Voltage (Vdss)
    20V
  • Drive Voltage (Max Rds On,Min Rds On)
    2.5V 4.5V
  • Vgs (Max)
    ±12V
  • Fall Time (Typ)
    15 ns
  • Turn-Off Delay Time
    18 ns
  • Continuous Drain Current (ID)
    1.3A
  • Threshold Voltage
    -1V
  • Gate to Source Voltage (Vgs)
    12V
  • Drain to Source Breakdown Voltage
    -20V
  • Height
    940μm
  • Length
    2.9mm
  • Width
    1.3mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
NTR1P02LT1G Description
NTR1P02LT1G belongs to the family of P-channel power MOSFETs manufactured by ON Semiconductor optimized for low RDS (on) to minimize power loss and conserve energy, which makes it well suited for space-sensitive power management circuitry. Its low RDS (on) can also provide higher efficiency and extend battery life. Its SOT-23 surface-mount package is used to save board space.

NTR1P02LT1G Features
Low RDS (on)
Low power loss
High efficiency
Extended battery life
Available in the SOT-23 surface-mount package

NTR1P02LT1G Applications
Printers
Computers
PCMCIA cards
DC?DC converters
Cellular and cordless telephones
NTR1P02LT1G More Descriptions
NTR1P02LT1: Small Signal MOSFET 20V 1.3A 220 mOhm Single P-Channel SOT-23 Logic Level
Trans MOSFET P-CH 20V 1.3A 3-Pin SOT-23 T/R / MOSFET P-CH 20V 1.3A SOT-23
Single P-Channel Power MOSFET -20V, -1.3A, 220mΩ
Single P-Channel 20 V 0.35 Ohm 3.1 nC 400 mW Silicon SMT Mosfet - SOT-23
20V 1.3A 400mW 220m´Î@4.5V750mA 1.25V@250Ã×A P Channel SOT-23(SOT-23-3) MOSFETs ROHS
Small Signal Field-Effect Transistor, 1.3A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
P Channel Mosfet, -20V, 1.3A Sot-23, Full Reel; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:1.3A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:4.5V; Power Dissipation:400Mw Rohs Compliant: Yes |Onsemi NTR1P02LT1G.
Product Comparison
The three parts on the right have similar specifications to NTR1P02LT1G.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mounting Type
    Package / Case
    Surface Mount
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Subcategory
    Voltage - Rated DC
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Terminal Finish
    Qualification Status
    Drain Current-Max (Abs) (ID)
    Mount
    HTS Code
    Reach Compliance Code
    Drain-source On Resistance-Max
    Nominal Vgs
    View Compare
  • NTR1P02LT1G
    NTR1P02LT1G
    ON Semiconductor
    ACTIVE (Last Updated: 3 days ago)
    14 Weeks
    Tin
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    YES
    3
    SILICON
    -55°C~150°C TJ
    Cut Tape (CT)
    2004
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    220MOhm
    Other Transistors
    -20V
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    -1.3A
    40
    3
    1
    400mW Ta
    Single
    ENHANCEMENT MODE
    400mW
    7 ns
    P-Channel
    SWITCHING
    220m Ω @ 750mA, 4.5V
    1.25V @ 250μA
    225pF @ 5V
    1.3A Ta
    5.5nC @ 4V
    15ns
    20V
    2.5V 4.5V
    ±12V
    15 ns
    18 ns
    1.3A
    -1V
    12V
    -20V
    940μm
    2.9mm
    1.3mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • NTR1P02T3G
    NTR1P02T3G
    ON Semiconductor
    -
    -
    -
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    YES
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2005
    e3
    yes
    Obsolete
    1 (Unlimited)
    3
    EAR99
    -
    Other Transistors
    -20V
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    -1A
    40
    3
    1
    400mW Ta
    Single
    ENHANCEMENT MODE
    400mW
    -
    P-Channel
    SWITCHING
    180m Ω @ 1.5A, 10V
    2.3V @ 250μA
    165pF @ 5V
    1A Ta
    2.5nC @ 5V
    9ns
    -
    4.5V 10V
    ±20V
    9 ns
    9 ns
    1A
    -
    20V
    -20V
    -
    -
    -
    -
    -
    RoHS Compliant
    Lead Free
    Tin (Sn)
    Not Qualified
    1A
    -
    -
    -
    -
    -
    NTR1P02LT1G vs NTR1P02T3G
  • NTR1P02T3
    NTR1P02T3
    ON Semiconductor
    -
    -
    -
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    -
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2005
    e0
    -
    Obsolete
    1 (Unlimited)
    3
    EAR99
    -
    Other Transistors
    -20V
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    240
    -1A
    30
    3
    1
    400mW Ta
    Single
    ENHANCEMENT MODE
    400mW
    -
    P-Channel
    SWITCHING
    180m Ω @ 1.5A, 10V
    2.3V @ 250μA
    165pF @ 5V
    1A Ta
    2.5nC @ 5V
    9ns
    -
    4.5V 10V
    ±20V
    9 ns
    9 ns
    1A
    -
    20V
    -20V
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    Contains Lead
    Tin/Lead (Sn/Pb)
    Not Qualified
    1A
    Surface Mount
    8541.21.00.95
    not_compliant
    0.18Ohm
    -
    NTR1P02LT1G vs NTR1P02T3
  • NTR1P02LT3G
    NTR1P02LT3G
    ON Semiconductor
    ACTIVE (Last Updated: 4 days ago)
    14 Weeks
    Tin
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    YES
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2006
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    220MOhm
    Other Transistors
    -
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    -
    40
    3
    1
    400mW Ta
    Single
    ENHANCEMENT MODE
    400mW
    7 ns
    P-Channel
    SWITCHING
    220m Ω @ 750mA, 4.5V
    1.25V @ 250μA
    225pF @ 5V
    1.3A Ta
    5.5nC @ 4V
    15ns
    20V
    2.5V 4.5V
    ±12V
    20 ns
    18 ns
    -1.3A
    -1V
    12V
    -20V
    1.01mm
    3.04mm
    1.4mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -1 V
    NTR1P02LT1G vs NTR1P02LT3G
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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