ON Semiconductor NTR1P02T3
- Part Number:
- NTR1P02T3
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2489545-NTR1P02T3
- Description:
- MOSFET P-CH 20V 1A SOT-23
- ECAD Model:
-
- Datasheet:
- NTR1P02T3
ON Semiconductor NTR1P02T3 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTR1P02T3.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2005
- JESD-609 Codee0
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- HTS Code8541.21.00.95
- SubcategoryOther Transistors
- Voltage - Rated DC-20V
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)240
- Reach Compliance Codenot_compliant
- Current Rating-1A
- Time@Peak Reflow Temperature-Max (s)30
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- Power Dissipation-Max400mW Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation400mW
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs180m Ω @ 1.5A, 10V
- Vgs(th) (Max) @ Id2.3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds165pF @ 5V
- Current - Continuous Drain (Id) @ 25°C1A Ta
- Gate Charge (Qg) (Max) @ Vgs2.5nC @ 5V
- Rise Time9ns
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)9 ns
- Turn-Off Delay Time9 ns
- Continuous Drain Current (ID)1A
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)1A
- Drain-source On Resistance-Max0.18Ohm
- Drain to Source Breakdown Voltage-20V
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
NTR1P02T3 Overview
A device's maximal input capacitance is 165pF @ 5V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 1A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is -20V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 1A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 9 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This device reduces its overall power consumption by using drive voltage (4.5V 10V).
NTR1P02T3 Features
a continuous drain current (ID) of 1A
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 9 ns
NTR1P02T3 Applications
There are a lot of ON Semiconductor
NTR1P02T3 applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
A device's maximal input capacitance is 165pF @ 5V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 1A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is -20V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 1A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 9 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This device reduces its overall power consumption by using drive voltage (4.5V 10V).
NTR1P02T3 Features
a continuous drain current (ID) of 1A
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 9 ns
NTR1P02T3 Applications
There are a lot of ON Semiconductor
NTR1P02T3 applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
NTR1P02T3 More Descriptions
MOSFETs- Power and Small Signal -20V -1A P-Channel No-Cancel/No-Return
Small Signal Field-Effect Transistor, 1A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
MOSFET N-CHANNEL 600V 4A TO263
Small Signal Field-Effect Transistor, 1A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
MOSFET N-CHANNEL 600V 4A TO263
The three parts on the right have similar specifications to NTR1P02T3.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishHTS CodeSubcategoryVoltage - Rated DCTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeCurrent RatingTime@Peak Reflow Temperature-Max (s)Pin CountQualification StatusNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDrain to Source Breakdown VoltageRoHS StatusLead FreeLifecycle StatusFactory Lead TimeContact PlatingSurface MountPbfree CodeResistanceTurn On Delay TimeDrain to Source Voltage (Vdss)Threshold VoltageHeightLengthWidthREACH SVHCRadiation HardeningNominal VgsView Compare
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NTR1P02T3Surface MountSurface MountTO-236-3, SC-59, SOT-23-33SILICON-55°C~150°C TJTape & Reel (TR)2005e0Obsolete1 (Unlimited)3EAR99Tin/Lead (Sn/Pb)8541.21.00.95Other Transistors-20VMOSFET (Metal Oxide)DUALGULL WING240not_compliant-1A303Not Qualified1400mW TaSingleENHANCEMENT MODE400mWP-ChannelSWITCHING180m Ω @ 1.5A, 10V2.3V @ 250μA165pF @ 5V1A Ta2.5nC @ 5V9ns4.5V 10V±20V9 ns9 ns1A20V1A0.18Ohm-20VNon-RoHS CompliantContains Lead---------------- -
-Surface MountTO-236-3, SC-59, SOT-23-33SILICON-55°C~150°C TJCut Tape (CT)2004e3Active1 (Unlimited)3EAR99--Other Transistors-20VMOSFET (Metal Oxide)DUALGULL WING260--1.3A403-1400mW TaSingleENHANCEMENT MODE400mWP-ChannelSWITCHING220m Ω @ 750mA, 4.5V1.25V @ 250μA225pF @ 5V1.3A Ta5.5nC @ 4V15ns2.5V 4.5V±12V15 ns18 ns1.3A12V---20VROHS3 CompliantLead FreeACTIVE (Last Updated: 3 days ago)14 WeeksTinYESyes220MOhm7 ns20V-1V940μm2.9mm1.3mmNo SVHCNo-
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-Surface MountTO-236-3, SC-59, SOT-23-33SILICON-55°C~150°C TJTape & Reel (TR)2005e3Obsolete1 (Unlimited)3EAR99Tin (Sn)-Other Transistors-20VMOSFET (Metal Oxide)DUALGULL WING260--1A403Not Qualified1400mW TaSingleENHANCEMENT MODE400mWP-ChannelSWITCHING180m Ω @ 1.5A, 10V2.3V @ 250μA165pF @ 5V1A Ta2.5nC @ 5V9ns4.5V 10V±20V9 ns9 ns1A20V1A--20VRoHS CompliantLead Free---YESyes----------
-
-Surface MountTO-236-3, SC-59, SOT-23-33SILICON-55°C~150°C TJTape & Reel (TR)2006e3Active1 (Unlimited)3EAR99--Other Transistors-MOSFET (Metal Oxide)DUALGULL WING260--403-1400mW TaSingleENHANCEMENT MODE400mWP-ChannelSWITCHING220m Ω @ 750mA, 4.5V1.25V @ 250μA225pF @ 5V1.3A Ta5.5nC @ 4V15ns2.5V 4.5V±12V20 ns18 ns-1.3A12V---20VROHS3 CompliantLead FreeACTIVE (Last Updated: 4 days ago)14 WeeksTinYESyes220MOhm7 ns20V-1V1.01mm3.04mm1.4mmNo SVHCNo-1 V
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