ON Semiconductor NTMSD3P102R2SG

Name: NTMSD3P102R2SG
Brand: ON Semiconductor
SKU: 2489468-NTMSD3P102R2SG
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: NTMSD3P102R2SG

Manufacturer:: ON Semiconductor

Ventron No:: 2489468-NTMSD3P102R2SG

Description:: MOSFET P-CH 20V 2.34A 8-SOIC

ECAD Model:

Datasheet:: NTMSD3P102R2SG

Specifications

ON Semiconductor NTMSD3P102R2SG technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTMSD3P102R2SG.

Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Surface Mount
YES
Transistor Element Material
SILICON
Packaging
Tape & Reel (TR)
Series
FETKY™
JESD-609 Code
e3
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Number of Terminations
8
Terminal Finish
MATTE TIN
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
8
JESD-30 Code
R-PDSO-G8
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
730mW Ta
Operating Mode
ENHANCEMENT MODE
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
85m Ω @ 3.05A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
750pF @ 16V
Current - Continuous Drain (Id) @ 25°C
2.34A Ta
Gate Charge (Qg) (Max) @ Vgs
25nC @ 10V
Drain to Source Voltage (Vdss)
20V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Drain Current-Max (Abs) (ID)
2.34A
Drain-source On Resistance-Max
0.085Ohm
DS Breakdown Voltage-Min
20V
FET Feature
Schottky Diode (Isolated)
Feedback Cap-Max (Crss)
135 pF
RoHS Status
ROHS3 Compliant

Description

NTMSD3P102R2SG Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 750pF @ 16V.There is no drain current on this device since the maximum continuous current it can conduct is 2.34A.In order for DS breakdown voltage to remain above 20V, it should remain above the 20V level.The transistor must receive a 20V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).

NTMSD3P102R2SG Features
a 20V drain to source voltage (Vdss)

NTMSD3P102R2SG Applications
There are a lot of Rochester Electronics, LLC
NTMSD3P102R2SG applications of single MOSFETs transistors.

DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.

NTMSD3P102R2SG More Descriptions

Trans MOSFET P-CH 20V 3.86A 8-Pin SOIC N T/R - Tape and Reel
MOSFETs- Power and Small Signal FETKY 20V .085R TR
Small Signal Field-Effect Transistor, 2.34A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
NTMSD3P102R2SG, SINGLE MOSFETS;

Product Comparison

The three parts on the right have similar specifications to NTMSD3P102R2SG.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Packaging

Series

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

FET Feature

Feedback Cap-Max (Crss)

RoHS Status

Operating Temperature

Lifecycle Status

Factory Lead Time

Contact Plating

Number of Pins

Published

ECCN Code

Subcategory

Element Configuration

Power Dissipation

Turn On Delay Time

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Height

Length

Width

Radiation Hardening

Lead Free

View Compare
NTMSD3P102R2SG

ON Semiconductor

Surface Mount

8-SOIC (0.154, 3.90mm Width)

YES

SILICON

Tape & Reel (TR)

FETKY™

e3

no

Obsolete

3 (168 Hours)

8

MATTE TIN

MOSFET (Metal Oxide)

DUAL

GULL WING

NOT SPECIFIED

NOT SPECIFIED

8

R-PDSO-G8

COMMERCIAL

1

SINGLE WITH BUILT-IN DIODE

730mW Ta

ENHANCEMENT MODE

P-Channel

SWITCHING

85m Ω @ 3.05A, 10V

2.5V @ 250μA

750pF @ 16V

2.34A Ta

25nC @ 10V

20V

4.5V 10V

±20V

2.34A

0.085Ohm

20V

Schottky Diode (Isolated)

135 pF

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
NTMS4873NFR2G

ON Semiconductor

Surface Mount

8-SOIC (0.154, 3.90mm Width)

YES

SILICON

Tape & Reel (TR)

-

e3

yes

Obsolete

1 (Unlimited)

8

MATTE TIN

MOSFET (Metal Oxide)

DUAL

GULL WING

NOT SPECIFIED

NOT SPECIFIED

8

R-PDSO-G8

COMMERCIAL

1

SINGLE WITH BUILT-IN DIODE

870mW Ta

ENHANCEMENT MODE

N-Channel

SWITCHING

12m Ω @ 10A, 10V

2.5V @ 250μA

1.9pF @ 15V

7.1A Ta

16nC @ 4.5V

30V

4.5V 10V

±20V

7.1A

0.012Ohm

30V

-

225 pF

ROHS3 Compliant

-55°C~150°C TJ

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

NTMSD3P102R2SG vs NTMS4873NFR2G
NTMS4920NR2G

ON Semiconductor

Surface Mount

8-SOIC (0.154, 3.90mm Width)

YES

SILICON

Tape & Reel (TR)

-

e3

yes

Active

1 (Unlimited)

8

-

MOSFET (Metal Oxide)

DUAL

GULL WING

260

40

8

-

-

1

-

820mW Ta

ENHANCEMENT MODE

N-Channel

SWITCHING

4.3m Ω @ 7.5A, 10V

3V @ 250μA

4068pF @ 25V

10.6A Ta

58.9nC @ 10V

30V

4.5V 10V

±20V

-

0.0043Ohm

30V

-

-

ROHS3 Compliant

-55°C~150°C TJ

ACTIVE (Last Updated: 2 days ago)

51 Weeks

Tin

8

2009

EAR99

FET General Purpose Power

Single

2.12W

15.3 ns

4.7ns

42.2 ns

68.6 ns

17A

20V

1.5mm

5mm

4mm

No

Lead Free

NTMSD3P102R2SG vs NTMS4920NR2G
NTMS10P02R2G

ON Semiconductor

-

SO-8

-

-

Tape & Reel (TR)

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

NTMSD3P102R2SG vs NTMS10P02R2G