NTMSD2P102LR2

ON Semiconductor NTMSD2P102LR2

Part Number:
NTMSD2P102LR2
Manufacturer:
ON Semiconductor
Ventron No:
2851766-NTMSD2P102LR2
Description:
MOSFET P-CH 20V 2.3A 8-SOIC
ECAD Model:
Datasheet:
NTMSD2P102LR2

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Specifications
ON Semiconductor NTMSD2P102LR2 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTMSD2P102LR2.
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Surface Mount
    YES
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    FETKY™
  • JESD-609 Code
    e0
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    8
  • Terminal Finish
    TIN LEAD
  • Additional Feature
    LOGIC LEVEL COMPATIBLE
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    240
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Pin Count
    8
  • JESD-30 Code
    R-PDSO-G8
  • Qualification Status
    COMMERCIAL
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    710mW Ta
  • Operating Mode
    ENHANCEMENT MODE
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    90m Ω @ 2.4A, 4.5V
  • Vgs(th) (Max) @ Id
    1.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    750pF @ 16V
  • Current - Continuous Drain (Id) @ 25°C
    2.3A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    18nC @ 4.5V
  • Drain to Source Voltage (Vdss)
    20V
  • Drive Voltage (Max Rds On,Min Rds On)
    2.5V 4.5V
  • Vgs (Max)
    ±10V
  • Drain Current-Max (Abs) (ID)
    2.3A
  • Drain-source On Resistance-Max
    0.09Ohm
  • DS Breakdown Voltage-Min
    20V
  • FET Feature
    Schottky Diode (Isolated)
  • Feedback Cap-Max (Crss)
    175 pF
  • RoHS Status
    Non-RoHS Compliant
Description
NTMSD2P102LR2 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 750pF @ 16V maximal input capacitance.A device can conduct a maximum continuous current of [2.3A] according to its drain current.The DS breakdown voltage should be maintained above 20V to maintain normal operation.To operate this transistor, you will need a 20V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (2.5V 4.5V).

NTMSD2P102LR2 Features
a 20V drain to source voltage (Vdss)


NTMSD2P102LR2 Applications
There are a lot of Rochester Electronics, LLC
NTMSD2P102LR2 applications of single MOSFETs transistors.


Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
NTMSD2P102LR2 More Descriptions
MOSFETs- Power and Small Signal 20V 3A P-Channel No-Cancel/No-Return
MOSFET P-CH 20V 2.3A 8-SOIC
Small Signal Field-Effect Transistor, 2.3A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
SMALL SIGNAL P-CHANNEL MOSFET
OEMs, CMs ONLY (NO BROKERS)
Product Comparison
The three parts on the right have similar specifications to NTMSD2P102LR2.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Surface Mount
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Terminal Finish
    Additional Feature
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Power Dissipation-Max
    Operating Mode
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    DS Breakdown Voltage-Min
    FET Feature
    Feedback Cap-Max (Crss)
    RoHS Status
    Reach Compliance Code
    Case Connection
    Mount
    Number of Pins
    Published
    Voltage - Rated DC
    Max Power Dissipation
    Current Rating
    Continuous Drain Current (ID)
    Lead Free
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    ECCN Code
    Subcategory
    Element Configuration
    Power Dissipation
    Rise Time
    Fall Time (Typ)
    Turn-Off Delay Time
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Radiation Hardening
    View Compare
  • NTMSD2P102LR2
    NTMSD2P102LR2
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    YES
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    FETKY™
    e0
    yes
    Obsolete
    1 (Unlimited)
    8
    TIN LEAD
    LOGIC LEVEL COMPATIBLE
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    240
    30
    8
    R-PDSO-G8
    COMMERCIAL
    1
    SINGLE WITH BUILT-IN DIODE
    710mW Ta
    ENHANCEMENT MODE
    P-Channel
    SWITCHING
    90m Ω @ 2.4A, 4.5V
    1.5V @ 250μA
    750pF @ 16V
    2.3A Ta
    18nC @ 4.5V
    20V
    2.5V 4.5V
    ±10V
    2.3A
    0.09Ohm
    20V
    Schottky Diode (Isolated)
    175 pF
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • NTMS4840NR2G
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    YES
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    -
    e3
    yes
    Obsolete
    1 (Unlimited)
    8
    MATTE TIN
    -
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    NOT SPECIFIED
    NOT SPECIFIED
    8
    R-PDSO-G8
    COMMERCIAL
    1
    SINGLE WITH BUILT-IN DIODE
    680mW Ta
    ENHANCEMENT MODE
    N-Channel
    SWITCHING
    24m Ω @ 6.9A, 10V
    3V @ 250μA
    520pF @ 15V
    4.5A Ta
    9.5nC @ 10V
    30V
    4.5V 10V
    ±20V
    5.5A
    0.024Ohm
    30V
    -
    -
    ROHS3 Compliant
    unknown
    DRAIN
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • NTMSD2P102R2SG
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    -
    -
    -
    Tape & Reel (TR)
    -
    -
    -
    Obsolete
    3 (168 Hours)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    P-Channel
    -
    90m Ω @ 2.4A, 4.5V
    -
    750pF @ 16V
    2.3A Ta
    18nC @ 4.5V
    20V
    -
    -
    -
    -
    -
    Schottky Diode (Isolated)
    -
    RoHS Compliant
    -
    -
    Surface Mount
    8
    2007
    -20V
    710mW
    -2.3A
    2.3A
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • NTMS7N03R2G
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    YES
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    -
    e3
    yes
    Active
    1 (Unlimited)
    8
    -
    AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    40
    8
    -
    -
    1
    -
    800mW Ta
    ENHANCEMENT MODE
    N-Channel
    SWITCHING
    23m Ω @ 7A, 10V
    3V @ 250μA
    1190pF @ 25V
    4.8A Ta
    43nC @ 10V
    -
    4.5V 10V
    ±20V
    -
    0.023Ohm
    -
    -
    -
    ROHS3 Compliant
    -
    -
    -
    8
    2005
    30V
    -
    7A
    7mA
    Lead Free
    ACTIVE (Last Updated: 1 day ago)
    29 Weeks
    Tin
    EAR99
    FET General Purpose Power
    Single
    2.5W
    71ns
    38 ns
    27 ns
    20V
    30V
    No
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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