ON Semiconductor NTMSD2P102LR2
- Part Number:
- NTMSD2P102LR2
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2851766-NTMSD2P102LR2
- Description:
- MOSFET P-CH 20V 2.3A 8-SOIC
- Datasheet:
- NTMSD2P102LR2
ON Semiconductor NTMSD2P102LR2 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTMSD2P102LR2.
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesFETKY™
- JESD-609 Codee0
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- Terminal FinishTIN LEAD
- Additional FeatureLOGIC LEVEL COMPATIBLE
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)240
- Time@Peak Reflow Temperature-Max (s)30
- Pin Count8
- JESD-30 CodeR-PDSO-G8
- Qualification StatusCOMMERCIAL
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max710mW Ta
- Operating ModeENHANCEMENT MODE
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs90m Ω @ 2.4A, 4.5V
- Vgs(th) (Max) @ Id1.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds750pF @ 16V
- Current - Continuous Drain (Id) @ 25°C2.3A Ta
- Gate Charge (Qg) (Max) @ Vgs18nC @ 4.5V
- Drain to Source Voltage (Vdss)20V
- Drive Voltage (Max Rds On,Min Rds On)2.5V 4.5V
- Vgs (Max)±10V
- Drain Current-Max (Abs) (ID)2.3A
- Drain-source On Resistance-Max0.09Ohm
- DS Breakdown Voltage-Min20V
- FET FeatureSchottky Diode (Isolated)
- Feedback Cap-Max (Crss)175 pF
- RoHS StatusNon-RoHS Compliant
NTMSD2P102LR2 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 750pF @ 16V maximal input capacitance.A device can conduct a maximum continuous current of [2.3A] according to its drain current.The DS breakdown voltage should be maintained above 20V to maintain normal operation.To operate this transistor, you will need a 20V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (2.5V 4.5V).
NTMSD2P102LR2 Features
a 20V drain to source voltage (Vdss)
NTMSD2P102LR2 Applications
There are a lot of Rochester Electronics, LLC
NTMSD2P102LR2 applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 750pF @ 16V maximal input capacitance.A device can conduct a maximum continuous current of [2.3A] according to its drain current.The DS breakdown voltage should be maintained above 20V to maintain normal operation.To operate this transistor, you will need a 20V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (2.5V 4.5V).
NTMSD2P102LR2 Features
a 20V drain to source voltage (Vdss)
NTMSD2P102LR2 Applications
There are a lot of Rochester Electronics, LLC
NTMSD2P102LR2 applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
NTMSD2P102LR2 More Descriptions
MOSFETs- Power and Small Signal 20V 3A P-Channel No-Cancel/No-Return
MOSFET P-CH 20V 2.3A 8-SOIC
Small Signal Field-Effect Transistor, 2.3A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
SMALL SIGNAL P-CHANNEL MOSFET
OEMs, CMs ONLY (NO BROKERS)
MOSFET P-CH 20V 2.3A 8-SOIC
Small Signal Field-Effect Transistor, 2.3A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
SMALL SIGNAL P-CHANNEL MOSFET
OEMs, CMs ONLY (NO BROKERS)
The three parts on the right have similar specifications to NTMSD2P102LR2.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishAdditional FeatureTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDS Breakdown Voltage-MinFET FeatureFeedback Cap-Max (Crss)RoHS StatusReach Compliance CodeCase ConnectionMountNumber of PinsPublishedVoltage - Rated DCMax Power DissipationCurrent RatingContinuous Drain Current (ID)Lead FreeLifecycle StatusFactory Lead TimeContact PlatingECCN CodeSubcategoryElement ConfigurationPower DissipationRise TimeFall Time (Typ)Turn-Off Delay TimeGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageRadiation HardeningView Compare
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NTMSD2P102LR2Surface Mount8-SOIC (0.154, 3.90mm Width)YESSILICON-55°C~150°C TJTape & Reel (TR)FETKY™e0yesObsolete1 (Unlimited)8TIN LEADLOGIC LEVEL COMPATIBLEMOSFET (Metal Oxide)DUALGULL WING240308R-PDSO-G8COMMERCIAL1SINGLE WITH BUILT-IN DIODE710mW TaENHANCEMENT MODEP-ChannelSWITCHING90m Ω @ 2.4A, 4.5V1.5V @ 250μA750pF @ 16V2.3A Ta18nC @ 4.5V20V2.5V 4.5V±10V2.3A0.09Ohm20VSchottky Diode (Isolated)175 pFNon-RoHS Compliant------------------------
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Surface Mount8-SOIC (0.154, 3.90mm Width)YESSILICON-55°C~150°C TJTape & Reel (TR)-e3yesObsolete1 (Unlimited)8MATTE TIN-MOSFET (Metal Oxide)DUALGULL WINGNOT SPECIFIEDNOT SPECIFIED8R-PDSO-G8COMMERCIAL1SINGLE WITH BUILT-IN DIODE680mW TaENHANCEMENT MODEN-ChannelSWITCHING24m Ω @ 6.9A, 10V3V @ 250μA520pF @ 15V4.5A Ta9.5nC @ 10V30V4.5V 10V±20V5.5A0.024Ohm30V--ROHS3 CompliantunknownDRAIN---------------------
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Surface Mount8-SOIC (0.154, 3.90mm Width)---Tape & Reel (TR)---Obsolete3 (168 Hours)---MOSFET (Metal Oxide)-----------P-Channel-90m Ω @ 2.4A, 4.5V-750pF @ 16V2.3A Ta18nC @ 4.5V20V-----Schottky Diode (Isolated)-RoHS Compliant--Surface Mount82007-20V710mW-2.3A2.3ALead Free-------------
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Surface Mount8-SOIC (0.154, 3.90mm Width)YESSILICON-55°C~150°C TJTape & Reel (TR)-e3yesActive1 (Unlimited)8-AVALANCHE RATED, LOGIC LEVEL COMPATIBLEMOSFET (Metal Oxide)DUALGULL WING260408--1-800mW TaENHANCEMENT MODEN-ChannelSWITCHING23m Ω @ 7A, 10V3V @ 250μA1190pF @ 25V4.8A Ta43nC @ 10V-4.5V 10V±20V-0.023Ohm---ROHS3 Compliant---8200530V-7A7mALead FreeACTIVE (Last Updated: 1 day ago)29 WeeksTinEAR99FET General Purpose PowerSingle2.5W71ns38 ns27 ns20V30VNo
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