ON Semiconductor NTMS7N03R2
- Part Number:
- NTMS7N03R2
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2489129-NTMS7N03R2
- Description:
- MOSFET N-CH 30V 4.8A 8-SOIC
- Datasheet:
- NTMS7N03R2
ON Semiconductor NTMS7N03R2 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTMS7N03R2.
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- Terminal FinishTIN LEAD
- Additional FeatureAVALANCHE RATED, LOGIC LEVEL COMPATIBLE
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)240
- Time@Peak Reflow Temperature-Max (s)30
- Pin Count8
- JESD-30 CodeR-PDSO-G8
- Qualification StatusCOMMERCIAL
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max800mW Ta
- Operating ModeENHANCEMENT MODE
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs23m Ω @ 7A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1.19pF @ 25V
- Current - Continuous Drain (Id) @ 25°C4.8A Ta
- Gate Charge (Qg) (Max) @ Vgs43nC @ 10V
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Drain Current-Max (Abs) (ID)4.8A
- Drain-source On Resistance-Max0.023Ohm
- Pulsed Drain Current-Max (IDM)14A
- DS Breakdown Voltage-Min30V
- Avalanche Energy Rating (Eas)288 mJ
- RoHS StatusNon-RoHS Compliant
NTMS7N03R2 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 288 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1.19pF @ 25V maximal input capacitance.A device can conduct a maximum continuous current of [4.8A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 14A.The DS breakdown voltage should be maintained above 30V to maintain normal operation.To operate this transistor, you will need a 30V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
NTMS7N03R2 Features
the avalanche energy rating (Eas) is 288 mJ
based on its rated peak drain current 14A.
a 30V drain to source voltage (Vdss)
NTMS7N03R2 Applications
There are a lot of Rochester Electronics, LLC
NTMS7N03R2 applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 288 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1.19pF @ 25V maximal input capacitance.A device can conduct a maximum continuous current of [4.8A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 14A.The DS breakdown voltage should be maintained above 30V to maintain normal operation.To operate this transistor, you will need a 30V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
NTMS7N03R2 Features
the avalanche energy rating (Eas) is 288 mJ
based on its rated peak drain current 14A.
a 30V drain to source voltage (Vdss)
NTMS7N03R2 Applications
There are a lot of Rochester Electronics, LLC
NTMS7N03R2 applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
NTMS7N03R2 More Descriptions
Tape & Reel (TR) Surface Mount N-Channel Single Mosfet Transistor 4.8A Ta 4.8A 2.5W 38ns
Single N-Channel Power MOSFET 30V, 7A, 23mΩ
TRANS MOSFET N-CH 30V 8.5A 8SOIC N - Tape and Reel
MOSFETs- Power and Small Signal 30V 7A N-Channel No-Cancel/No-Return
Power Field-Effect Transistor, 4.8A I(D), 30V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Single N-Channel Power MOSFET 30V, 7A, 23mΩ
TRANS MOSFET N-CH 30V 8.5A 8SOIC N - Tape and Reel
MOSFETs- Power and Small Signal 30V 7A N-Channel No-Cancel/No-Return
Power Field-Effect Transistor, 4.8A I(D), 30V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
The three parts on the right have similar specifications to NTMS7N03R2.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishAdditional FeatureTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)RoHS StatusReach Compliance CodeCase ConnectionLifecycle StatusFactory Lead TimeContact PlatingNumber of PinsPublishedECCN CodeSubcategoryElement ConfigurationPower DissipationTurn On Delay TimeRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)HeightLengthWidthRadiation HardeningLead FreeDrain to Source Breakdown VoltageView Compare
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NTMS7N03R2Surface Mount8-SOIC (0.154, 3.90mm Width)YESSILICON-55°C~150°C TJTape & Reel (TR)e0noObsolete1 (Unlimited)8TIN LEADAVALANCHE RATED, LOGIC LEVEL COMPATIBLEMOSFET (Metal Oxide)DUALGULL WING240308R-PDSO-G8COMMERCIAL1SINGLE WITH BUILT-IN DIODE800mW TaENHANCEMENT MODEN-ChannelSWITCHING23m Ω @ 7A, 10V3V @ 250μA1.19pF @ 25V4.8A Ta43nC @ 10V30V4.5V 10V±20V4.8A0.023Ohm14A30V288 mJNon-RoHS Compliant------------------------
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Surface Mount8-SOIC (0.154, 3.90mm Width)YESSILICON-55°C~150°C TJTape & Reel (TR)e3yesObsolete1 (Unlimited)8MATTE TIN-MOSFET (Metal Oxide)DUALGULL WINGNOT SPECIFIEDNOT SPECIFIED8R-PDSO-G8COMMERCIAL1SINGLE WITH BUILT-IN DIODE750mW TaENHANCEMENT MODEN-ChannelSWITCHING20m Ω @ 7.5A, 10V3V @ 250μA940pF @ 25V4.9A Ta7.7nC @ 4.5V30V4.5V 10V±20V6.4A0.02Ohm-30V-ROHS3 CompliantunknownDRAIN---------------------
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Surface Mount8-SOIC (0.154, 3.90mm Width)YESSILICON-55°C~150°C TJTape & Reel (TR)e3yesActive1 (Unlimited)8--MOSFET (Metal Oxide)DUALGULL WING260408--1-820mW TaENHANCEMENT MODEN-ChannelSWITCHING4.3m Ω @ 7.5A, 10V3V @ 250μA4068pF @ 25V10.6A Ta58.9nC @ 10V30V4.5V 10V±20V-0.0043Ohm-30V-ROHS3 Compliant--ACTIVE (Last Updated: 2 days ago)51 WeeksTin82009EAR99FET General Purpose PowerSingle2.12W15.3 ns4.7ns42.2 ns68.6 ns17A20V1.5mm5mm4mmNoLead Free-
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Surface Mount8-SOIC (0.154, 3.90mm Width)YESSILICON-55°C~150°C TJTape & Reel (TR)e3yesActive1 (Unlimited)8Tin (Sn)-MOSFET (Metal Oxide)DUALGULL WING260408--1-810mW TaENHANCEMENT MODEN-ChannelSWITCHING6.5m Ω @ 7.5A, 10V2.5V @ 250μA2563pF @ 25V8.6A Ta38.5nC @ 10V-4.5V 10V±20V11.2A0.0065Ohm---ROHS3 Compliant--ACTIVE (Last Updated: 4 days ago)2 Weeks-82009EAR99FET General Purpose PowerSingle1.36W12.3 ns3.6ns38.9 ns33.8 ns8.6A20V---NoLead Free30V
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