NTMS7N03R2

ON Semiconductor NTMS7N03R2

Part Number:
NTMS7N03R2
Manufacturer:
ON Semiconductor
Ventron No:
2489129-NTMS7N03R2
Description:
MOSFET N-CH 30V 4.8A 8-SOIC
ECAD Model:
Datasheet:
NTMS7N03R2

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Specifications
ON Semiconductor NTMS7N03R2 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTMS7N03R2.
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Surface Mount
    YES
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • JESD-609 Code
    e0
  • Pbfree Code
    no
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    8
  • Terminal Finish
    TIN LEAD
  • Additional Feature
    AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    240
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Pin Count
    8
  • JESD-30 Code
    R-PDSO-G8
  • Qualification Status
    COMMERCIAL
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    800mW Ta
  • Operating Mode
    ENHANCEMENT MODE
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    23m Ω @ 7A, 10V
  • Vgs(th) (Max) @ Id
    3V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1.19pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    4.8A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    43nC @ 10V
  • Drain to Source Voltage (Vdss)
    30V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Drain Current-Max (Abs) (ID)
    4.8A
  • Drain-source On Resistance-Max
    0.023Ohm
  • Pulsed Drain Current-Max (IDM)
    14A
  • DS Breakdown Voltage-Min
    30V
  • Avalanche Energy Rating (Eas)
    288 mJ
  • RoHS Status
    Non-RoHS Compliant
Description
NTMS7N03R2 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 288 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1.19pF @ 25V maximal input capacitance.A device can conduct a maximum continuous current of [4.8A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 14A.The DS breakdown voltage should be maintained above 30V to maintain normal operation.To operate this transistor, you will need a 30V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).

NTMS7N03R2 Features
the avalanche energy rating (Eas) is 288 mJ
based on its rated peak drain current 14A.
a 30V drain to source voltage (Vdss)


NTMS7N03R2 Applications
There are a lot of Rochester Electronics, LLC
NTMS7N03R2 applications of single MOSFETs transistors.


Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
NTMS7N03R2 More Descriptions
Tape & Reel (TR) Surface Mount N-Channel Single Mosfet Transistor 4.8A Ta 4.8A 2.5W 38ns
Single N-Channel Power MOSFET 30V, 7A, 23mΩ
TRANS MOSFET N-CH 30V 8.5A 8SOIC N - Tape and Reel
MOSFETs- Power and Small Signal 30V 7A N-Channel No-Cancel/No-Return
Power Field-Effect Transistor, 4.8A I(D), 30V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Product Comparison
The three parts on the right have similar specifications to NTMS7N03R2.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Surface Mount
    Transistor Element Material
    Operating Temperature
    Packaging
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Terminal Finish
    Additional Feature
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Power Dissipation-Max
    Operating Mode
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    RoHS Status
    Reach Compliance Code
    Case Connection
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Number of Pins
    Published
    ECCN Code
    Subcategory
    Element Configuration
    Power Dissipation
    Turn On Delay Time
    Rise Time
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Height
    Length
    Width
    Radiation Hardening
    Lead Free
    Drain to Source Breakdown Voltage
    View Compare
  • NTMS7N03R2
    NTMS7N03R2
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    YES
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    e0
    no
    Obsolete
    1 (Unlimited)
    8
    TIN LEAD
    AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    240
    30
    8
    R-PDSO-G8
    COMMERCIAL
    1
    SINGLE WITH BUILT-IN DIODE
    800mW Ta
    ENHANCEMENT MODE
    N-Channel
    SWITCHING
    23m Ω @ 7A, 10V
    3V @ 250μA
    1.19pF @ 25V
    4.8A Ta
    43nC @ 10V
    30V
    4.5V 10V
    ±20V
    4.8A
    0.023Ohm
    14A
    30V
    288 mJ
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • NTMS4800NR2G
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    YES
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    e3
    yes
    Obsolete
    1 (Unlimited)
    8
    MATTE TIN
    -
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    NOT SPECIFIED
    NOT SPECIFIED
    8
    R-PDSO-G8
    COMMERCIAL
    1
    SINGLE WITH BUILT-IN DIODE
    750mW Ta
    ENHANCEMENT MODE
    N-Channel
    SWITCHING
    20m Ω @ 7.5A, 10V
    3V @ 250μA
    940pF @ 25V
    4.9A Ta
    7.7nC @ 4.5V
    30V
    4.5V 10V
    ±20V
    6.4A
    0.02Ohm
    -
    30V
    -
    ROHS3 Compliant
    unknown
    DRAIN
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • NTMS4920NR2G
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    YES
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    e3
    yes
    Active
    1 (Unlimited)
    8
    -
    -
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    40
    8
    -
    -
    1
    -
    820mW Ta
    ENHANCEMENT MODE
    N-Channel
    SWITCHING
    4.3m Ω @ 7.5A, 10V
    3V @ 250μA
    4068pF @ 25V
    10.6A Ta
    58.9nC @ 10V
    30V
    4.5V 10V
    ±20V
    -
    0.0043Ohm
    -
    30V
    -
    ROHS3 Compliant
    -
    -
    ACTIVE (Last Updated: 2 days ago)
    51 Weeks
    Tin
    8
    2009
    EAR99
    FET General Purpose Power
    Single
    2.12W
    15.3 ns
    4.7ns
    42.2 ns
    68.6 ns
    17A
    20V
    1.5mm
    5mm
    4mm
    No
    Lead Free
    -
  • NTMS4937NR2G
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    YES
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    e3
    yes
    Active
    1 (Unlimited)
    8
    Tin (Sn)
    -
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    40
    8
    -
    -
    1
    -
    810mW Ta
    ENHANCEMENT MODE
    N-Channel
    SWITCHING
    6.5m Ω @ 7.5A, 10V
    2.5V @ 250μA
    2563pF @ 25V
    8.6A Ta
    38.5nC @ 10V
    -
    4.5V 10V
    ±20V
    11.2A
    0.0065Ohm
    -
    -
    -
    ROHS3 Compliant
    -
    -
    ACTIVE (Last Updated: 4 days ago)
    2 Weeks
    -
    8
    2009
    EAR99
    FET General Purpose Power
    Single
    1.36W
    12.3 ns
    3.6ns
    38.9 ns
    33.8 ns
    8.6A
    20V
    -
    -
    -
    No
    Lead Free
    30V
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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