ON Semiconductor NTMS4P01R2

Name: NTMS4P01R2
Brand: ON Semiconductor
SKU: 2488879-NTMS4P01R2
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: NTMS4P01R2

Manufacturer:: ON Semiconductor

Ventron No:: 2488879-NTMS4P01R2

Description:: MOSFET P-CH 12V 3.4A 8-SOIC

ECAD Model:

Datasheet:: NTMS4P01R2

Specifications

ON Semiconductor NTMS4P01R2 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTMS4P01R2.

Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2004
JESD-609 Code
e0
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Subcategory
Other Transistors
Voltage - Rated DC
-12V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
240
Reach Compliance Code
not_compliant
Current Rating
-4.5A
Time@Peak Reflow Temperature-Max (s)
30
Pin Count
8
JESD-30 Code
R-PDSO-G8
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
790mW Ta
Operating Mode
ENHANCEMENT MODE
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
45m Ω @ 4.5A, 4.5V
Vgs(th) (Max) @ Id
1.15V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1850pF @ 9.6V
Current - Continuous Drain (Id) @ 25°C
3.4A Ta
Gate Charge (Qg) (Max) @ Vgs
35nC @ 4.5V
Drain to Source Voltage (Vdss)
12V
Drive Voltage (Max Rds On,Min Rds On)
2.5V 4.5V
Vgs (Max)
±10V
Continuous Drain Current (ID)
3.4A
Drain Current-Max (Abs) (ID)
2.32A
Drain-source On Resistance-Max
0.045Ohm
Feedback Cap-Max (Crss)
400 pF
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead

Description

NTMS4P01R2 Overview
A device's maximum input capacitance is 1850pF @ 9.6V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 3.4A for this device. Drain current refers to the capacity of the device to conduct continuous current.Its drain current is 2.32A, and it is the maximum continuous current the device can conduct.To operate this transistor, you need to apply a 12V drain to source voltage (Vdss).This device uses no drive voltage (2.5V 4.5V) to reduce its overall power consumption.

NTMS4P01R2 Features
a continuous drain current (ID) of 3.4A
a 12V drain to source voltage (Vdss)

NTMS4P01R2 Applications
There are a lot of ON Semiconductor
NTMS4P01R2 applications of single MOSFETs transistors.

Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters

NTMS4P01R2 More Descriptions

MOSFET P-CH 12V 3.4A 8-SOIC
Small Signal Field-Effect Transistor, 3.4A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
IC MCU 8BIT 128KB FLASH 144LQFP
French Electronic Distributor since 1988

Product Comparison

The three parts on the right have similar specifications to NTMS4P01R2.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Voltage - Rated DC

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Current Rating

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Continuous Drain Current (ID)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Feedback Cap-Max (Crss)

RoHS Status

Lead Free

Lifecycle Status

Factory Lead Time

Contact Plating

Surface Mount

Number of Pins

Pbfree Code

Element Configuration

Power Dissipation

Turn On Delay Time

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Gate to Source Voltage (Vgs)

DS Breakdown Voltage-Min

Height

Length

Width

Radiation Hardening

Additional Feature

Drain to Source Breakdown Voltage

View Compare
NTMS4P01R2

ON Semiconductor

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2004

e0

Obsolete

1 (Unlimited)

8

EAR99

Tin/Lead (Sn/Pb)

Other Transistors

-12V

MOSFET (Metal Oxide)

DUAL

GULL WING

240

not_compliant

-4.5A

30

8

R-PDSO-G8

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

790mW Ta

ENHANCEMENT MODE

P-Channel

SWITCHING

45m Ω @ 4.5A, 4.5V

1.15V @ 250μA

1850pF @ 9.6V

3.4A Ta

35nC @ 4.5V

12V

2.5V 4.5V

±10V

3.4A

2.32A

0.045Ohm

400 pF

Non-RoHS Compliant

Contains Lead

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
NTMS4920NR2G

ON Semiconductor

-

Surface Mount

8-SOIC (0.154, 3.90mm Width)

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2009

e3

Active

1 (Unlimited)

8

EAR99

-

FET General Purpose Power

-

MOSFET (Metal Oxide)

DUAL

GULL WING

260

-

-

40

8

-

-

1

-

820mW Ta

ENHANCEMENT MODE

N-Channel

SWITCHING

4.3m Ω @ 7.5A, 10V

3V @ 250μA

4068pF @ 25V

10.6A Ta

58.9nC @ 10V

30V

4.5V 10V

±20V

17A

-

0.0043Ohm

-

ROHS3 Compliant

Lead Free

ACTIVE (Last Updated: 2 days ago)

51 Weeks

Tin

YES

8

yes

Single

2.12W

15.3 ns

4.7ns

42.2 ns

68.6 ns

20V

30V

1.5mm

5mm

4mm

No

-

-

NTMS4P01R2 vs NTMS4920NR2G
NTMS7N03R2G

ON Semiconductor

-

Surface Mount

8-SOIC (0.154, 3.90mm Width)

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2005

e3

Active

1 (Unlimited)

8

EAR99

-

FET General Purpose Power

30V

MOSFET (Metal Oxide)

DUAL

GULL WING

260

-

7A

40

8

-

-

1

-

800mW Ta

ENHANCEMENT MODE

N-Channel

SWITCHING

23m Ω @ 7A, 10V

3V @ 250μA

1190pF @ 25V

4.8A Ta

43nC @ 10V

-

4.5V 10V

±20V

7mA

-

0.023Ohm

-

ROHS3 Compliant

Lead Free

ACTIVE (Last Updated: 1 day ago)

29 Weeks

Tin

YES

8

yes

Single

2.5W

-

71ns

38 ns

27 ns

20V

-

-

-

-

No

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

30V

NTMS4P01R2 vs NTMS7N03R2G
NTMS10P02R2G

ON Semiconductor

-

-

SO-8

-

-

Tape & Reel (TR)

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

NTMS4P01R2 vs NTMS10P02R2G