ON Semiconductor NTMS4939NR2G
- Part Number:
- NTMS4939NR2G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2485879-NTMS4939NR2G
- Description:
- MOSFET N-CH 30V 8A 8SOIC
- Datasheet:
- NTMS4939NR2G
ON Semiconductor NTMS4939NR2G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTMS4939NR2G.
- Lifecycle StatusACTIVE (Last Updated: 4 days ago)
- Factory Lead Time36 Weeks
- Contact PlatingTin
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Surface MountYES
- Number of Pins8
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2009
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- ECCN CodeEAR99
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count8
- Qualification StatusNot Qualified
- Number of Elements1
- Power Dissipation-Max800mW Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation1.35W
- Turn On Delay Time10.6 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs8.4m Ω @ 7.5A, 10V
- Vgs(th) (Max) @ Id2.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds2000pF @ 25V
- Current - Continuous Drain (Id) @ 25°C8A Ta
- Gate Charge (Qg) (Max) @ Vgs25nC @ 10V
- Rise Time3.1ns
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)21.5 ns
- Turn-Off Delay Time36.7 ns
- Continuous Drain Current (ID)8A
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)8A
- Drain to Source Breakdown Voltage30V
- Height1.5mm
- Length5mm
- Width4mm
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
NTMS4939NR2G Overview
A device's maximum input capacitance is 2000pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 8A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=30V, and this device has a drain-to-source breakdown voltage of 30V voltage.Its drain current is 8A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 36.7 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10.6 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
NTMS4939NR2G Features
a continuous drain current (ID) of 8A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 36.7 ns
NTMS4939NR2G Applications
There are a lot of ON Semiconductor
NTMS4939NR2G applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
A device's maximum input capacitance is 2000pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 8A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=30V, and this device has a drain-to-source breakdown voltage of 30V voltage.Its drain current is 8A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 36.7 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10.6 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
NTMS4939NR2G Features
a continuous drain current (ID) of 8A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 36.7 ns
NTMS4939NR2G Applications
There are a lot of ON Semiconductor
NTMS4939NR2G applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
NTMS4939NR2G More Descriptions
NTMS4939NR2G N-channel MOSFET Transistor, 10.3 A, 30 V, 8-Pin SOIC | ON Semiconductor NTMS4939NR2G
Single N-Channel Power MOSFET 30V, 12.5A, 8.4mΩ
Trans MOSFET N-CH 30V 12.5A 8-Pin SOIC T/R - Tape and Reel
Single N-Channel Power MOSFET 30V, 12.5A, 8.4mΩ
Trans MOSFET N-CH 30V 12.5A 8-Pin SOIC T/R - Tape and Reel
The three parts on the right have similar specifications to NTMS4939NR2G.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMounting TypePackage / CaseSurface MountNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountQualification StatusNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain to Source Breakdown VoltageHeightLengthWidthRoHS StatusLead FreeTerminal FinishReach Compliance CodeJESD-30 CodeConfigurationCase ConnectionDrain to Source Voltage (Vdss)Drain-source On Resistance-MaxDS Breakdown Voltage-MinAdditional FeatureVoltage - Rated DCCurrent RatingRadiation HardeningView Compare
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NTMS4939NR2GACTIVE (Last Updated: 4 days ago)36 WeeksTinSurface Mount8-SOIC (0.154, 3.90mm Width)YES8SILICON-55°C~150°C TJTape & Reel (TR)2009e3yesActive1 (Unlimited)8EAR99FET General Purpose PowerMOSFET (Metal Oxide)DUALGULL WING260408Not Qualified1800mW TaSingleENHANCEMENT MODE1.35W10.6 nsN-ChannelSWITCHING8.4m Ω @ 7.5A, 10V2.5V @ 250μA2000pF @ 25V8A Ta25nC @ 10V3.1ns4.5V 10V±20V21.5 ns36.7 ns8A20V8A30V1.5mm5mm4mmROHS3 CompliantLead Free-------------
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---Surface Mount8-SOIC (0.154, 3.90mm Width)YES-SILICON-55°C~150°C TJTape & Reel (TR)-e3yesObsolete1 (Unlimited)8--MOSFET (Metal Oxide)DUALGULL WINGNOT SPECIFIEDNOT SPECIFIED8COMMERCIAL1750mW Ta-ENHANCEMENT MODE--N-ChannelSWITCHING20m Ω @ 7.5A, 10V3V @ 250μA940pF @ 25V4.9A Ta7.7nC @ 4.5V-4.5V 10V±20V----6.4A----ROHS3 Compliant-MATTE TINunknownR-PDSO-G8SINGLE WITH BUILT-IN DIODEDRAIN30V0.02Ohm30V----
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ACTIVE (Last Updated: 1 day ago)29 WeeksTinSurface Mount8-SOIC (0.154, 3.90mm Width)YES8SILICON-55°C~150°C TJTape & Reel (TR)2005e3yesActive1 (Unlimited)8EAR99FET General Purpose PowerMOSFET (Metal Oxide)DUALGULL WING260408-1800mW TaSingleENHANCEMENT MODE2.5W-N-ChannelSWITCHING23m Ω @ 7A, 10V3V @ 250μA1190pF @ 25V4.8A Ta43nC @ 10V71ns4.5V 10V±20V38 ns27 ns7mA20V-30V---ROHS3 CompliantLead Free------0.023Ohm-AVALANCHE RATED, LOGIC LEVEL COMPATIBLE30V7ANo
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ACTIVE (Last Updated: 4 days ago)2 Weeks-Surface Mount8-SOIC (0.154, 3.90mm Width)YES8SILICON-55°C~150°C TJTape & Reel (TR)2009e3yesActive1 (Unlimited)8EAR99FET General Purpose PowerMOSFET (Metal Oxide)DUALGULL WING260408-1810mW TaSingleENHANCEMENT MODE1.36W12.3 nsN-ChannelSWITCHING6.5m Ω @ 7.5A, 10V2.5V @ 250μA2563pF @ 25V8.6A Ta38.5nC @ 10V3.6ns4.5V 10V±20V38.9 ns33.8 ns8.6A20V11.2A30V---ROHS3 CompliantLead FreeTin (Sn)-----0.0065Ohm----No
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