ON Semiconductor NTMS4107NR2G
- Part Number:
- NTMS4107NR2G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2490585-NTMS4107NR2G
- Description:
- MOSFET N-CH 30V 11A 8-SOIC
- ECAD Model:
-
- Datasheet:
- NTMS4107NR2G
ON Semiconductor NTMS4107NR2G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTMS4107NR2G.
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Supplier Device Package8-SOIC
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation-Max930mW Ta
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs4.5mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id2.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds6pF @ 15V
- Current - Continuous Drain (Id) @ 25°C11A Ta
- Gate Charge (Qg) (Max) @ Vgs45nC @ 4.5V
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- RoHS StatusROHS3 Compliant
NTMS4107NR2G Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 6pF @ 15V.Operating this transistor requires a 30V drain to source voltage (Vdss).By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.
NTMS4107NR2G Features
a 30V drain to source voltage (Vdss)
NTMS4107NR2G Applications
There are a lot of Rochester Electronics, LLC
NTMS4107NR2G applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 6pF @ 15V.Operating this transistor requires a 30V drain to source voltage (Vdss).By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.
NTMS4107NR2G Features
a 30V drain to source voltage (Vdss)
NTMS4107NR2G Applications
There are a lot of Rochester Electronics, LLC
NTMS4107NR2G applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
NTMS4107NR2G More Descriptions
Power MOSFET 30V 18A 3.4 mOhm Single N-Channel SO-8
Trans MOSFET N-CH 30V 15A 8-Pin SOIC N T/R - Tape and Reel
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:18A; On Resistance, Rds(on):3.4mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1V ;RoHS Compliant: Yes
Trans MOSFET N-CH 30V 15A 8-Pin SOIC N T/R - Tape and Reel
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:18A; On Resistance, Rds(on):3.4mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1V ;RoHS Compliant: Yes
The three parts on the right have similar specifications to NTMS4107NR2G.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)TechnologyPower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)RoHS StatusMountNumber of PinsPublishedVoltage - Rated DCMax Power DissipationCurrent RatingContinuous Drain Current (ID)FET FeatureLead FreeSurface MountTransistor Element MaterialJESD-609 CodePbfree CodeNumber of TerminationsTerminal FinishTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationOperating ModeTransistor ApplicationDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDS Breakdown Voltage-MinFeedback Cap-Max (Crss)Lifecycle StatusFactory Lead TimeContact PlatingECCN CodeAdditional FeatureSubcategoryElement ConfigurationPower DissipationRise TimeFall Time (Typ)Turn-Off Delay TimeGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageRadiation HardeningView Compare
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NTMS4107NR2GSurface Mount8-SOIC (0.154, 3.90mm Width)8-SOIC-55°C~150°C TJTape & Reel (TR)Obsolete1 (Unlimited)MOSFET (Metal Oxide)930mW TaN-Channel4.5mOhm @ 15A, 10V2.5V @ 250μA6pF @ 15V11A Ta45nC @ 4.5V30V4.5V 10V±20VROHS3 Compliant--------------------------------------------- -
Surface Mount8-SOIC (0.154, 3.90mm Width)--Tape & Reel (TR)Obsolete3 (168 Hours)MOSFET (Metal Oxide)-P-Channel90m Ω @ 2.4A, 4.5V-750pF @ 16V2.3A Ta18nC @ 4.5V20V--RoHS CompliantSurface Mount82007-20V710mW-2.3A2.3ASchottky Diode (Isolated)Lead Free-----------------------------------
-
Surface Mount8-SOIC (0.154, 3.90mm Width)--55°C~150°C TJTape & Reel (TR)Obsolete1 (Unlimited)MOSFET (Metal Oxide)870mW TaN-Channel12m Ω @ 10A, 10V2.5V @ 250μA1.9pF @ 15V7.1A Ta16nC @ 4.5V30V4.5V 10V±20VROHS3 Compliant---------YESSILICONe3yes8MATTE TINDUALGULL WINGNOT SPECIFIEDNOT SPECIFIED8R-PDSO-G8COMMERCIAL1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODESWITCHING7.1A0.012Ohm30V225 pF--------------
-
Surface Mount8-SOIC (0.154, 3.90mm Width)--55°C~150°C TJTape & Reel (TR)Active1 (Unlimited)MOSFET (Metal Oxide)800mW TaN-Channel23m Ω @ 7A, 10V3V @ 250μA1190pF @ 25V4.8A Ta43nC @ 10V-4.5V 10V±20VROHS3 Compliant-8200530V-7A7mA-Lead FreeYESSILICONe3yes8-DUALGULL WING260408--1-ENHANCEMENT MODESWITCHING-0.023Ohm--ACTIVE (Last Updated: 1 day ago)29 WeeksTinEAR99AVALANCHE RATED, LOGIC LEVEL COMPATIBLEFET General Purpose PowerSingle2.5W71ns38 ns27 ns20V30VNo
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