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NTD4963NT4G

ON Semiconductor NTD4963NT4G

Part Number:
NTD4963NT4G
Manufacturer:
ON Semiconductor
Ventron No:
2853005-NTD4963NT4G
Description:
MOSFET N-CH 30V 8.1A DPAK
ECAD Model:
Datasheet:
NTD4963NT4G

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Specifications
ON Semiconductor NTD4963NT4G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTD4963NT4G.
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Supplier Device Package
    DPAK
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tape & Reel (TR)
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Technology
    MOSFET (Metal Oxide)
  • Power Dissipation-Max
    1.1W Ta 35.7W Tc
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    9.6mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id
    2.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1.035pF @ 12V
  • Current - Continuous Drain (Id) @ 25°C
    8.1A Ta 44A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    16.2nC @ 10V
  • Drain to Source Voltage (Vdss)
    30V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • RoHS Status
    ROHS3 Compliant
Description
NTD4963NT4G Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1.035pF @ 12V.This transistor requires a drain-source voltage (Vdss) of 30V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).

NTD4963NT4G Features
a 30V drain to source voltage (Vdss)


NTD4963NT4G Applications
There are a lot of Rochester Electronics, LLC
NTD4963NT4G applications of single MOSFETs transistors.


Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
NTD4963NT4G More Descriptions
Power MOSFET 30V 44A 9.6 mOhm Single N-Channel DPAK
MOSFET N-Channel 30V 10A DPAK | ON Semiconductor NTD4963NT4G
Trans MOSFET N-CH 30V 10A 3-Pin(2 Tab) DPAK T/R
MOSFET NFET DPAK 30V 44A 9.6MOHM
Power Field-Effect Transistor, 8.1A I(D), 30V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
N CHANNEL MOSFET, 30V,8.1A, TO-252
French Electronic Distributor since 1988
MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:8.1A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0082ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V ;RoHS Compliant: Yes
Product Comparison
The three parts on the right have similar specifications to NTD4963NT4G.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Supplier Device Package
    Operating Temperature
    Packaging
    Part Status
    Moisture Sensitivity Level (MSL)
    Technology
    Power Dissipation-Max
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    RoHS Status
    Mount
    Number of Pins
    Published
    Continuous Drain Current (ID)
    View Compare
  • NTD4963NT4G
    NTD4963NT4G
    ON Semiconductor
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    DPAK
    -55°C~175°C TJ
    Tape & Reel (TR)
    Obsolete
    1 (Unlimited)
    MOSFET (Metal Oxide)
    1.1W Ta 35.7W Tc
    N-Channel
    9.6mOhm @ 30A, 10V
    2.5V @ 250μA
    1.035pF @ 12V
    8.1A Ta 44A Tc
    16.2nC @ 10V
    30V
    4.5V 10V
    ±20V
    ROHS3 Compliant
    -
    -
    -
    -
    -
  • NTD4810N-1G
    NTD4810N-1G
    ON Semiconductor
    Through Hole
    TO-251-3 Short Leads, IPak, TO-251AA
    I-PAK
    -55°C~175°C TJ
    Tube
    Obsolete
    1 (Unlimited)
    MOSFET (Metal Oxide)
    1.4W Ta 50W Tc
    N-Channel
    10mOhm @ 30A, 10V
    2.5V @ 250μA
    1.35pF @ 12V
    9A Ta 54A Tc
    11nC @ 4.5V
    30V
    4.5V 11.5V
    ±20V
    ROHS3 Compliant
    -
    -
    -
    -
    NTD4963NT4G vs NTD4810N-1G
  • NTD4809N-35G
    NTD4809N-35G
    ON Semiconductor
    Through Hole
    TO-251-3 Stub Leads, IPak
    I-PAK
    -55°C~175°C TJ
    Tube
    Obsolete
    1 (Unlimited)
    MOSFET (Metal Oxide)
    1.4W Ta 52W Tc
    N-Channel
    9mOhm @ 30A, 10V
    2.5V @ 250μA
    1.456pF @ 12V
    9.6A Ta 58A Tc
    13nC @ 4.5V
    30V
    4.5V 11.5V
    ±20V
    ROHS3 Compliant
    -
    -
    -
    -
    NTD4963NT4G vs NTD4809N-35G
  • NTD4959N-35G
    NTD4959N-35G
    ON Semiconductor
    Through Hole
    TO-251-3 Stub Leads, IPak
    -
    -55°C~175°C TJ
    Tube
    Obsolete
    1 (Unlimited)
    MOSFET (Metal Oxide)
    1.3W Ta 52W Tc
    N-Channel
    9m Ω @ 30A, 10V
    2.5V @ 250μA
    1456pF @ 12V
    9A Ta 58A Tc
    25nC @ 11.5V
    30V
    4.5V 11.5V
    ±20V
    RoHS Compliant
    Through Hole
    3
    2009
    58A
    NTD4963NT4G vs NTD4959N-35G
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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