ON Semiconductor NTD4860N-1G

Name: NTD4860N-1G
Brand: ON Semiconductor
SKU: 2490277-NTD4860N-1G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: NTD4860N-1G

Manufacturer:: ON Semiconductor

Ventron No:: 2490277-NTD4860N-1G

Description:: MOSFET N-CH 25V 10.4A IPAK

ECAD Model:

Datasheet:: NTD4860N-1G

Specifications

ON Semiconductor NTD4860N-1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTD4860N-1G.

Mounting Type
Through Hole
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
TIN
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
JESD-30 Code
R-PSIP-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
1.28W Ta 50W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
7.5m Ω @ 30A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1.308pF @ 12V
Current - Continuous Drain (Id) @ 25°C
10.4A Ta 65A Tc
Gate Charge (Qg) (Max) @ Vgs
16.5nC @ 4.5V
Drain to Source Voltage (Vdss)
25V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Drain Current-Max (Abs) (ID)
10.4A
Drain-source On Resistance-Max
0.0111Ohm
Pulsed Drain Current-Max (IDM)
130A
DS Breakdown Voltage-Min
25V
Avalanche Energy Rating (Eas)
84.5 mJ
RoHS Status
ROHS3 Compliant

Description

NTD4860N-1G Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 84.5 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1.308pF @ 12V maximal input capacitance.A device can conduct a maximum continuous current of [10.4A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 130A.The DS breakdown voltage should be maintained above 25V to maintain normal operation.To operate this transistor, you will need a 25V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).

NTD4860N-1G Features
the avalanche energy rating (Eas) is 84.5 mJ
based on its rated peak drain current 130A.
a 25V drain to source voltage (Vdss)

NTD4860N-1G Applications
There are a lot of Rochester Electronics, LLC
NTD4860N-1G applications of single MOSFETs transistors.

Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies

NTD4860N-1G More Descriptions

Tube Through Hole N-Channel Single Mosfet Transistor 10.4A Ta 65A Tc 12.6A 2W 2.3ns
Single N-Channel Power MOSFET 25V, 65A, 7.5mΩ
Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:12.6A; Drain Source Voltage, Vds:25V; On Resistance, Rds(on):7.5mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:2.5V; Power Dissipation, Pd:2W ;RoHS Compliant: Yes

Product Comparison

The three parts on the right have similar specifications to NTD4860N-1G.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

Technology

Terminal Position

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

RoHS Status

Supplier Device Package

Lifecycle Status

Number of Pins

Published

ECCN Code

Element Configuration

Power Dissipation

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Lead Free

Mount

View Compare
NTD4860N-1G

ON Semiconductor

Through Hole

TO-251-3 Short Leads, IPak, TO-251AA

NO

SILICON

-55°C~175°C TJ

Tube

e3

yes

Obsolete

1 (Unlimited)

3

TIN

MOSFET (Metal Oxide)

SINGLE

NOT SPECIFIED

NOT SPECIFIED

3

R-PSIP-T3

COMMERCIAL

1

SINGLE WITH BUILT-IN DIODE

1.28W Ta 50W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

7.5m Ω @ 30A, 10V

2.5V @ 250μA

1.308pF @ 12V

10.4A Ta 65A Tc

16.5nC @ 4.5V

25V

4.5V 10V

±20V

10.4A

0.0111Ohm

130A

25V

84.5 mJ

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-
NTD4804N-1G

ON Semiconductor

Through Hole

TO-251-3 Short Leads, IPak, TO-251AA

-

-

-55°C~175°C TJ

Tube

-

-

Obsolete

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

1.43W Ta 107W Tc

-

-

N-Channel

-

4mOhm @ 30A, 10V

2.5V @ 250μA

4.49pF @ 12V

14.5A Ta 124A Tc

40nC @ 4.5V

30V

4.5V 11.5V

±20V

-

-

-

-

-

ROHS3 Compliant

I-PAK

-

-

-

-

-

-

-

-

-

-

NTD4860N-1G vs NTD4804N-1G
NTD4863NA-35G

ON Semiconductor

Through Hole

TO-251-3 Stub Leads, IPak

NO

SILICON

-55°C~175°C TJ

Tube

e3

yes

Obsolete

1 (Unlimited)

3

Tin (Sn)

MOSFET (Metal Oxide)

-

-

-

3

-

-

1

-

1.27W Ta 36.6W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

9.3m Ω @ 30A, 10V

2.5V @ 250μA

990pF @ 12V

9.2A Ta 49A Tc

17.8nC @ 10V

25V

-

-

9.2A

-

98A

25V

60.5 mJ

RoHS Compliant

-

LAST SHIPMENTS (Last Updated: 1 week ago)

3

2010

EAR99

Single

1.95W

11.3mA

20V

Lead Free

-

NTD4860N-1G vs NTD4863NA-35G
NTD4959N-35G

ON Semiconductor

Through Hole

TO-251-3 Stub Leads, IPak

-

-

-55°C~175°C TJ

Tube

-

-

Obsolete

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

1.3W Ta 52W Tc

-

-

N-Channel

-

9m Ω @ 30A, 10V

2.5V @ 250μA

1456pF @ 12V

9A Ta 58A Tc

25nC @ 11.5V

30V

4.5V 11.5V

±20V

-

-

-

-

-

RoHS Compliant

-

-

3

2009

-

-

-

58A

-

-

Through Hole

NTD4860N-1G vs NTD4959N-35G