ON Semiconductor NTD4858N-1G
- Part Number:
- NTD4858N-1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2490314-NTD4858N-1G
- Description:
- MOSFET N-CH 25V 11.2A IPAK
- ECAD Model:
-
- Datasheet:
- NTD4858N-1G
ON Semiconductor NTD4858N-1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTD4858N-1G.
- Mounting TypeThrough Hole
- Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
- Supplier Device PackageI-PAK
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation-Max1.3W Ta 54.5W Tc
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs6.2mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id2.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1.563pF @ 12V
- Current - Continuous Drain (Id) @ 25°C11.2A Ta 73A Tc
- Gate Charge (Qg) (Max) @ Vgs19.2nC @ 4.5V
- Drain to Source Voltage (Vdss)25V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- RoHS StatusROHS3 Compliant
NTD4858N-1G Overview
The maximum input capacitance of this device is 1.563pF @ 12V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.The drain-to-source voltage (Vdss) of this transistor needs to be at 25V in order to operate.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.
NTD4858N-1G Features
a 25V drain to source voltage (Vdss)
NTD4858N-1G Applications
There are a lot of Rochester Electronics, LLC
NTD4858N-1G applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
The maximum input capacitance of this device is 1.563pF @ 12V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.The drain-to-source voltage (Vdss) of this transistor needs to be at 25V in order to operate.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.
NTD4858N-1G Features
a 25V drain to source voltage (Vdss)
NTD4858N-1G Applications
There are a lot of Rochester Electronics, LLC
NTD4858N-1G applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
NTD4858N-1G More Descriptions
Tube Through Hole N-Channel Single Mosfet Transistor 11.2A Ta 73A Tc 13.6A 2W 5.1ns
Single N-Channel Power MOSFET 25V, 73A, 6.2mΩ
N Channel Mosfet, 25V, 13.6A, Ipak; Channel Type:N Channel; Drain Source Voltage Vds:25V; Continuous Drain Current Id:13.6A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5V Rohs Compliant: Yes |Onsemi NTD4858N-1G
Single N-Channel Power MOSFET 25V, 73A, 6.2mΩ
N Channel Mosfet, 25V, 13.6A, Ipak; Channel Type:N Channel; Drain Source Voltage Vds:25V; Continuous Drain Current Id:13.6A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5V Rohs Compliant: Yes |Onsemi NTD4858N-1G
The three parts on the right have similar specifications to NTD4858N-1G.
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ImagePart NumberManufacturerMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)TechnologyPower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)RoHS StatusSurface MountTransistor Element MaterialJESD-609 CodePbfree CodeNumber of TerminationsTerminal FinishTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationOperating ModeCase ConnectionTransistor ApplicationDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)MountNumber of PinsPublishedContinuous Drain Current (ID)View Compare
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NTD4858N-1GThrough HoleTO-251-3 Short Leads, IPak, TO-251AAI-PAK-55°C~175°C TJTubeObsolete1 (Unlimited)MOSFET (Metal Oxide)1.3W Ta 54.5W TcN-Channel6.2mOhm @ 30A, 10V2.5V @ 250μA1.563pF @ 12V11.2A Ta 73A Tc19.2nC @ 4.5V25V4.5V 10V±20VROHS3 Compliant--------------------------- -
Through HoleTO-251-3 Short Leads, IPak, TO-251AA--55°C~175°C TJTubeObsolete1 (Unlimited)MOSFET (Metal Oxide)1.38W Ta 37.5W TcN-Channel5.5m Ω @ 30A, 10V2.2V @ 250μA1.932pF @ 15V10.3A Ta 54A Tc24nC @ 10V30V4.5V 10V±20VROHS3 CompliantNOSILICONe3yes3MATTE TINSINGLENOT SPECIFIEDNOT SPECIFIED3R-PSIP-T3COMMERCIAL1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHING14A0.008Ohm223A30V48 mJ----
-
Through HoleTO-251-3 Stub Leads, IPak--55°C~175°C TJTubeObsolete1 (Unlimited)MOSFET (Metal Oxide)1.35W Ta 66.7W TcN-Channel4.3m Ω @ 30A, 10V2.5V @ 250μA2.95pF @ 12V14A Ta 98A Tc32.7nC @ 4.5V25V4.5V 10V±20VROHS3 CompliantNOSILICONe3yes3TINSINGLENOT SPECIFIEDNOT SPECIFIED3R-PSIP-T3COMMERCIAL1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHING14A0.006Ohm197A25V220 mJ----
-
Through HoleTO-251-3 Stub Leads, IPak--55°C~175°C TJTubeObsolete1 (Unlimited)MOSFET (Metal Oxide)1.3W Ta 52W TcN-Channel9m Ω @ 30A, 10V2.5V @ 250μA1456pF @ 12V9A Ta 58A Tc25nC @ 11.5V30V4.5V 11.5V±20VRoHS Compliant----------------------Through Hole3200958A
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