ON Semiconductor NTD4809NH-35G

Name: NTD4809NH-35G
Brand: ON Semiconductor
SKU: 2490311-NTD4809NH-35G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: NTD4809NH-35G

Manufacturer:: ON Semiconductor

Ventron No:: 2490311-NTD4809NH-35G

Description:: MOSFET N-CH 30V 9A IPAK

ECAD Model:

Datasheet:: N(T,V)D4809NH

Specifications

ON Semiconductor NTD4809NH-35G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTD4809NH-35G.

Mounting Type
Through Hole
Package / Case
TO-251-3 Stub Leads, IPak
Supplier Device Package
I-PAK
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
1.3W Ta 52W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
2.155pF @ 12V
Current - Continuous Drain (Id) @ 25°C
9.6A Ta 58A Tc
Gate Charge (Qg) (Max) @ Vgs
15nC @ 4.5V
Drain to Source Voltage (Vdss)
30V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 11.5V
Vgs (Max)
±20V
RoHS Status
ROHS3 Compliant

Description

NTD4809NH-35G Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 2.155pF @ 12V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 30V.Using drive voltage (4.5V 11.5V) reduces this device's overall power consumption.

NTD4809NH-35G Features
a 30V drain to source voltage (Vdss)

NTD4809NH-35G Applications
There are a lot of Rochester Electronics, LLC
NTD4809NH-35G applications of single MOSFETs transistors.

Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification

NTD4809NH-35G More Descriptions

Tube Through Hole N-Channel Single Mosfet Transistor 9.6A Ta 58A Tc 58A 2W 3ns
Power MOSFET 30V 58A 9 mOhm Single N-Channel DPAK
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:58A; On Resistance, Rds(on):9mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:2.1V ;RoHS Compliant: Yes

Product Comparison

The three parts on the right have similar specifications to NTD4809NH-35G.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Supplier Device Package

Operating Temperature

Packaging

Part Status

Moisture Sensitivity Level (MSL)

Technology

Power Dissipation-Max

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

RoHS Status

Surface Mount

Transistor Element Material

JESD-609 Code

Pbfree Code

Number of Terminations

Terminal Finish

Terminal Position

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Operating Mode

Case Connection

Transistor Application

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

Lifecycle Status

Factory Lead Time

Number of Pins

Published

ECCN Code

Subcategory

Element Configuration

Power Dissipation

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Radiation Hardening

Lead Free

View Compare
NTD4809NH-35G

ON Semiconductor

Through Hole

TO-251-3 Stub Leads, IPak

I-PAK

-55°C~175°C TJ

Tube

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

1.3W Ta 52W Tc

N-Channel

9mOhm @ 30A, 10V

2.5V @ 250μA

2.155pF @ 12V

9.6A Ta 58A Tc

15nC @ 4.5V

30V

4.5V 11.5V

±20V

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
NTD4906N-1G

ON Semiconductor

Through Hole

TO-251-3 Short Leads, IPak, TO-251AA

-

-55°C~175°C TJ

Tube

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

1.38W Ta 37.5W Tc

N-Channel

5.5m Ω @ 30A, 10V

2.2V @ 250μA

1.932pF @ 15V

10.3A Ta 54A Tc

24nC @ 10V

30V

4.5V 10V

±20V

ROHS3 Compliant

NO

SILICON

e3

yes

3

MATTE TIN

SINGLE

NOT SPECIFIED

NOT SPECIFIED

3

R-PSIP-T3

COMMERCIAL

1

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

DRAIN

SWITCHING

14A

0.008Ohm

223A

30V

48 mJ

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

NTD4809NH-35G vs NTD4906N-1G
NTD4855N-35G

ON Semiconductor

Through Hole

TO-251-3 Stub Leads, IPak

-

-55°C~175°C TJ

Tube

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

1.35W Ta 66.7W Tc

N-Channel

4.3m Ω @ 30A, 10V

2.5V @ 250μA

2.95pF @ 12V

14A Ta 98A Tc

32.7nC @ 4.5V

25V

4.5V 10V

±20V

ROHS3 Compliant

NO

SILICON

e3

yes

3

TIN

SINGLE

NOT SPECIFIED

NOT SPECIFIED

3

R-PSIP-T3

COMMERCIAL

1

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

DRAIN

SWITCHING

14A

0.006Ohm

197A

25V

220 mJ

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

NTD4809NH-35G vs NTD4855N-35G
NTD4858N-35G

ON Semiconductor

Through Hole

TO-251-3 Stub Leads, IPak

-

-55°C~175°C TJ

Tube

Active

1 (Unlimited)

MOSFET (Metal Oxide)

1.3W Ta 54.5W Tc

N-Channel

6.2m Ω @ 30A, 10V

2.5V @ 250μA

1563pF @ 12V

11.2A Ta 73A Tc

19.2nC @ 4.5V

-

4.5V 10V

±20V

ROHS3 Compliant

NO

SILICON

e3

yes

3

Tin (Sn)

-

-

-

3

-

-

1

-

ENHANCEMENT MODE

DRAIN

SWITCHING

-

-

-

-

-

ACTIVE (Last Updated: 1 day ago)

4 Weeks

3

2007

EAR99

FET General Purpose Power

Single

2W

17.3ns

2.8 ns

23.8 ns

13.6A

20V

25V

No

Lead Free

NTD4809NH-35G vs NTD4858N-35G