NTD4808N-35G

ON Semiconductor NTD4808N-35G

Part Number:
NTD4808N-35G
Manufacturer:
ON Semiconductor
Ventron No:
2490273-NTD4808N-35G
Description:
MOSFET N-CH 30V 9.8A IPAK
ECAD Model:
Datasheet:
NTD4808N-35G

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Specifications
ON Semiconductor NTD4808N-35G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTD4808N-35G.
  • Mounting Type
    Through Hole
  • Package / Case
    TO-251-3 Stub Leads, IPak
  • Supplier Device Package
    I-PAK
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Technology
    MOSFET (Metal Oxide)
  • Power Dissipation-Max
    1.4W Ta 54.6W Tc
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    8mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id
    2.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1.538pF @ 12V
  • Current - Continuous Drain (Id) @ 25°C
    10A Ta 63A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    13nC @ 4.5V
  • Drain to Source Voltage (Vdss)
    30V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 11.5V
  • Vgs (Max)
    ±20V
  • RoHS Status
    ROHS3 Compliant
Description
NTD4808N-35G Overview
The maximum input capacitance of this device is 1.538pF @ 12V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.The drain-to-source voltage (Vdss) of this transistor needs to be at 30V in order to operate.Using drive voltage (4.5V 11.5V), this device helps reduce its power consumption.

NTD4808N-35G Features
a 30V drain to source voltage (Vdss)


NTD4808N-35G Applications
There are a lot of Rochester Electronics, LLC
NTD4808N-35G applications of single MOSFETs transistors.


Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
NTD4808N-35G More Descriptions
Tube Through Hole N-Channel Single Mosfet Transistor 10A Ta 63A Tc 63A 2W 5.6ns
MOSFETs- Power and Small Signal NFET 30V 63A 8MOHM
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:63A; On Resistance, Rds(on):8mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:3-IPAK ;RoHS Compliant: Yes
Product Comparison
The three parts on the right have similar specifications to NTD4808N-35G.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Supplier Device Package
    Operating Temperature
    Packaging
    Part Status
    Moisture Sensitivity Level (MSL)
    Technology
    Power Dissipation-Max
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    RoHS Status
    Surface Mount
    Transistor Element Material
    JESD-609 Code
    Pbfree Code
    Number of Terminations
    Terminal Finish
    Terminal Position
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Operating Mode
    Case Connection
    Transistor Application
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    Lifecycle Status
    Number of Pins
    Published
    ECCN Code
    Additional Feature
    Subcategory
    Voltage - Rated DC
    Terminal Form
    Reach Compliance Code
    Current Rating
    Element Configuration
    Power Dissipation
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Lead Free
    Factory Lead Time
    Rise Time
    Fall Time (Typ)
    Radiation Hardening
    View Compare
  • NTD4808N-35G
    NTD4808N-35G
    Through Hole
    TO-251-3 Stub Leads, IPak
    I-PAK
    -55°C~175°C TJ
    Tube
    Obsolete
    1 (Unlimited)
    MOSFET (Metal Oxide)
    1.4W Ta 54.6W Tc
    N-Channel
    8mOhm @ 30A, 10V
    2.5V @ 250μA
    1.538pF @ 12V
    10A Ta 63A Tc
    13nC @ 4.5V
    30V
    4.5V 11.5V
    ±20V
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • NTD4906N-1G
    Through Hole
    TO-251-3 Short Leads, IPak, TO-251AA
    -
    -55°C~175°C TJ
    Tube
    Obsolete
    1 (Unlimited)
    MOSFET (Metal Oxide)
    1.38W Ta 37.5W Tc
    N-Channel
    5.5m Ω @ 30A, 10V
    2.2V @ 250μA
    1.932pF @ 15V
    10.3A Ta 54A Tc
    24nC @ 10V
    30V
    4.5V 10V
    ±20V
    ROHS3 Compliant
    NO
    SILICON
    e3
    yes
    3
    MATTE TIN
    SINGLE
    NOT SPECIFIED
    NOT SPECIFIED
    3
    R-PSIP-T3
    COMMERCIAL
    1
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    14A
    0.008Ohm
    223A
    30V
    48 mJ
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • NTD4302
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -55°C~150°C TJ
    Tube
    Obsolete
    1 (Unlimited)
    MOSFET (Metal Oxide)
    1.04W Ta 75W Tc
    N-Channel
    10m Ω @ 20A, 10V
    3V @ 250μA
    2400pF @ 24V
    8.4A Ta 68A Tc
    80nC @ 10V
    -
    4.5V 10V
    ±20V
    Non-RoHS Compliant
    YES
    SILICON
    e0
    yes
    2
    Tin/Lead (Sn80Pb20)
    -
    235
    NOT SPECIFIED
    4
    R-PSSO-G2
    Not Qualified
    1
    -
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    -
    0.01Ohm
    28A
    -
    722 mJ
    OBSOLETE (Last Updated: 1 week ago)
    4
    2005
    EAR99
    AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
    FET General Purpose Power
    30V
    GULL WING
    not_compliant
    68A
    Single
    75W
    40 ns
    68A
    20V
    30V
    Lead Free
    -
    -
    -
    -
  • NTD4858N-35G
    Through Hole
    TO-251-3 Stub Leads, IPak
    -
    -55°C~175°C TJ
    Tube
    Active
    1 (Unlimited)
    MOSFET (Metal Oxide)
    1.3W Ta 54.5W Tc
    N-Channel
    6.2m Ω @ 30A, 10V
    2.5V @ 250μA
    1563pF @ 12V
    11.2A Ta 73A Tc
    19.2nC @ 4.5V
    -
    4.5V 10V
    ±20V
    ROHS3 Compliant
    NO
    SILICON
    e3
    yes
    3
    Tin (Sn)
    -
    -
    -
    3
    -
    -
    1
    -
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    -
    -
    -
    -
    -
    ACTIVE (Last Updated: 1 day ago)
    3
    2007
    EAR99
    -
    FET General Purpose Power
    -
    -
    -
    -
    Single
    2W
    23.8 ns
    13.6A
    20V
    25V
    Lead Free
    4 Weeks
    17.3ns
    2.8 ns
    No
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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