ON Semiconductor NTD4808N-35G
- Part Number:
- NTD4808N-35G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2490273-NTD4808N-35G
- Description:
- MOSFET N-CH 30V 9.8A IPAK
- Datasheet:
- NTD4808N-35G
ON Semiconductor NTD4808N-35G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTD4808N-35G.
- Mounting TypeThrough Hole
- Package / CaseTO-251-3 Stub Leads, IPak
- Supplier Device PackageI-PAK
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation-Max1.4W Ta 54.6W Tc
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs8mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id2.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1.538pF @ 12V
- Current - Continuous Drain (Id) @ 25°C10A Ta 63A Tc
- Gate Charge (Qg) (Max) @ Vgs13nC @ 4.5V
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 11.5V
- Vgs (Max)±20V
- RoHS StatusROHS3 Compliant
NTD4808N-35G Overview
The maximum input capacitance of this device is 1.538pF @ 12V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.The drain-to-source voltage (Vdss) of this transistor needs to be at 30V in order to operate.Using drive voltage (4.5V 11.5V), this device helps reduce its power consumption.
NTD4808N-35G Features
a 30V drain to source voltage (Vdss)
NTD4808N-35G Applications
There are a lot of Rochester Electronics, LLC
NTD4808N-35G applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
The maximum input capacitance of this device is 1.538pF @ 12V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.The drain-to-source voltage (Vdss) of this transistor needs to be at 30V in order to operate.Using drive voltage (4.5V 11.5V), this device helps reduce its power consumption.
NTD4808N-35G Features
a 30V drain to source voltage (Vdss)
NTD4808N-35G Applications
There are a lot of Rochester Electronics, LLC
NTD4808N-35G applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
NTD4808N-35G More Descriptions
Tube Through Hole N-Channel Single Mosfet Transistor 10A Ta 63A Tc 63A 2W 5.6ns
MOSFETs- Power and Small Signal NFET 30V 63A 8MOHM
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:63A; On Resistance, Rds(on):8mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:3-IPAK ;RoHS Compliant: Yes
MOSFETs- Power and Small Signal NFET 30V 63A 8MOHM
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:63A; On Resistance, Rds(on):8mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:3-IPAK ;RoHS Compliant: Yes
The three parts on the right have similar specifications to NTD4808N-35G.
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ImagePart NumberManufacturerMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)TechnologyPower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)RoHS StatusSurface MountTransistor Element MaterialJESD-609 CodePbfree CodeNumber of TerminationsTerminal FinishTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationOperating ModeCase ConnectionTransistor ApplicationDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)Lifecycle StatusNumber of PinsPublishedECCN CodeAdditional FeatureSubcategoryVoltage - Rated DCTerminal FormReach Compliance CodeCurrent RatingElement ConfigurationPower DissipationTurn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageLead FreeFactory Lead TimeRise TimeFall Time (Typ)Radiation HardeningView Compare
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NTD4808N-35GThrough HoleTO-251-3 Stub Leads, IPakI-PAK-55°C~175°C TJTubeObsolete1 (Unlimited)MOSFET (Metal Oxide)1.4W Ta 54.6W TcN-Channel8mOhm @ 30A, 10V2.5V @ 250μA1.538pF @ 12V10A Ta 63A Tc13nC @ 4.5V30V4.5V 11.5V±20VROHS3 Compliant--------------------------------------------
-
Through HoleTO-251-3 Short Leads, IPak, TO-251AA--55°C~175°C TJTubeObsolete1 (Unlimited)MOSFET (Metal Oxide)1.38W Ta 37.5W TcN-Channel5.5m Ω @ 30A, 10V2.2V @ 250μA1.932pF @ 15V10.3A Ta 54A Tc24nC @ 10V30V4.5V 10V±20VROHS3 CompliantNOSILICONe3yes3MATTE TINSINGLENOT SPECIFIEDNOT SPECIFIED3R-PSIP-T3COMMERCIAL1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHING14A0.008Ohm223A30V48 mJ---------------------
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Surface MountTO-252-3, DPak (2 Leads Tab), SC-63--55°C~150°C TJTubeObsolete1 (Unlimited)MOSFET (Metal Oxide)1.04W Ta 75W TcN-Channel10m Ω @ 20A, 10V3V @ 250μA2400pF @ 24V8.4A Ta 68A Tc80nC @ 10V-4.5V 10V±20VNon-RoHS CompliantYESSILICONe0yes2Tin/Lead (Sn80Pb20)-235NOT SPECIFIED4R-PSSO-G2Not Qualified1-ENHANCEMENT MODEDRAINSWITCHING-0.01Ohm28A-722 mJOBSOLETE (Last Updated: 1 week ago)42005EAR99AVALANCHE RATED, LOGIC LEVEL COMPATIBLEFET General Purpose Power30VGULL WINGnot_compliant68ASingle75W40 ns68A20V30VLead Free----
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Through HoleTO-251-3 Stub Leads, IPak--55°C~175°C TJTubeActive1 (Unlimited)MOSFET (Metal Oxide)1.3W Ta 54.5W TcN-Channel6.2m Ω @ 30A, 10V2.5V @ 250μA1563pF @ 12V11.2A Ta 73A Tc19.2nC @ 4.5V-4.5V 10V±20VROHS3 CompliantNOSILICONe3yes3Tin (Sn)---3--1-ENHANCEMENT MODEDRAINSWITCHING-----ACTIVE (Last Updated: 1 day ago)32007EAR99-FET General Purpose Power----Single2W23.8 ns13.6A20V25VLead Free4 Weeks17.3ns2.8 nsNo
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