Fairchild/ON Semiconductor NDP6060L
- Part Number:
- NDP6060L
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2482952-NDP6060L
- Description:
- MOSFET N-CH 60V 48A TO-220AB
- Datasheet:
- TO220B03 Pkg Drawing
Fairchild/ON Semiconductor NDP6060L technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor NDP6060L.
- Lifecycle StatusACTIVE (Last Updated: 3 days ago)
- Factory Lead Time9 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Weight1.8g
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~175°C TJ
- PackagingTube
- Published1998
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance25mOhm
- Terminal FinishTin (Sn)
- Additional FeatureLOGIC LEVEL COMPATIBLE
- SubcategoryFET General Purpose Power
- Voltage - Rated DC60V
- TechnologyMOSFET (Metal Oxide)
- Current Rating48A
- Number of Elements1
- Power Dissipation-Max100W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation100W
- Turn On Delay Time15 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs20m Ω @ 24A, 10V
- Vgs(th) (Max) @ Id2V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds2000pF @ 25V
- Current - Continuous Drain (Id) @ 25°C48A Tc
- Gate Charge (Qg) (Max) @ Vgs60nC @ 5V
- Rise Time320ns
- Drive Voltage (Max Rds On,Min Rds On)5V 10V
- Vgs (Max)±16V
- Fall Time (Typ)161 ns
- Turn-Off Delay Time49 ns
- Continuous Drain Current (ID)48A
- Threshold Voltage2V
- JEDEC-95 CodeTO-220AB
- Gate to Source Voltage (Vgs)16V
- Drain to Source Breakdown Voltage60V
- Avalanche Energy Rating (Eas)200 mJ
- Height6.35mm
- Length6.35mm
- Width6.35mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
NDP6060L Description
NDP6060L N-channel MOSFET is based on an original, unique vertical structure. NDP6060L MOSFET results in a dramatic reduction in the on-resistance. ON Semiconductor NDP6060L is suitable for low voltage applications such as automotive, DC/DC converters, PWM motor controls.
NDP6060L Features
Low drive requirements
Internal source-drain diode
Maximum junction temperature rating
Critical DC electrical parameters
High density cell design
NDP6060L Applications
Automotive
DC/DC converters
PWM motor controls
NDP6060L More Descriptions
N-Channel Logic Level Enhancement Mode Field Effect Transistor 60V, 48A, 25mΩ
Trans MOSFET N-CH 60V 48A 3-Pin(3 Tab) TO-220AB Rail - Rail/Tube
FAIRCHILD NDP6060L / MOSFET N-CH 60V 48A TO-220ABFAIRCHI
60V 48A 100W 20m´Î@10V24A 2V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS
Power Field-Effect Transistor, 48A I(D), 60V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, LOGIC, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:48A; Drain Source Voltage Vds:60V; On Resistance Rds(on):25mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:100W; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:48A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220; Power Dissipation Pd:100W; Power Dissipation Pd:100W; Pulse Current Idm:144A; SMD Marking:NDP6060L; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:5V; Voltage Vgs th Max:2V
These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Trans MOSFET N-CH 60V 48A 3-Pin(3 Tab) TO-220AB Rail - Rail/Tube
FAIRCHILD NDP6060L / MOSFET N-CH 60V 48A TO-220ABFAIRCHI
60V 48A 100W 20m´Î@10V24A 2V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS
Power Field-Effect Transistor, 48A I(D), 60V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, LOGIC, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:48A; Drain Source Voltage Vds:60V; On Resistance Rds(on):25mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:100W; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:48A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220; Power Dissipation Pd:100W; Power Dissipation Pd:100W; Pulse Current Idm:144A; SMD Marking:NDP6060L; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:5V; Voltage Vgs th Max:2V
These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
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