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NDP6020P

Fairchild/ON Semiconductor NDP6020P

Part Number:
NDP6020P
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2848540-NDP6020P
Description:
MOSFET P-CH 20V 24A TO-220
ECAD Model:
Datasheet:
TO220B03 Pkg Drawing

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Specifications
Fairchild/ON Semiconductor NDP6020P technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor NDP6020P.
  • Lifecycle Status
    ACTIVE (Last Updated: 3 days ago)
  • Factory Lead Time
    10 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Number of Pins
    3
  • Weight
    1.8g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -65°C~175°C TJ
  • Packaging
    Tube
  • Published
    1998
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Resistance
    50mOhm
  • Terminal Finish
    Tin (Sn)
  • Additional Feature
    LOGIC LEVEL COMPATIBLE
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    -20V
  • Technology
    MOSFET (Metal Oxide)
  • Current Rating
    -24A
  • Number of Elements
    1
  • Power Dissipation-Max
    60W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    60W
  • Turn On Delay Time
    15 ns
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    50m Ω @ 12A, 4.5V
  • Vgs(th) (Max) @ Id
    1V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1590pF @ 10V
  • Current - Continuous Drain (Id) @ 25°C
    24A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    35nC @ 5V
  • Rise Time
    27ns
  • Drain to Source Voltage (Vdss)
    20V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V
  • Vgs (Max)
    ±8V
  • Fall Time (Typ)
    70 ns
  • Turn-Off Delay Time
    120 ns
  • Continuous Drain Current (ID)
    -24A
  • Threshold Voltage
    -700mV
  • JEDEC-95 Code
    TO-220AB
  • Gate to Source Voltage (Vgs)
    8V
  • Drain to Source Breakdown Voltage
    -20V
  • Pulsed Drain Current-Max (IDM)
    70A
  • Height
    16.3mm
  • Length
    10.67mm
  • Width
    4.7mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
NDP6020P Description

The NDP6020P is a P-channel logic level enhancement mode Field Effect Transistor using high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. This device is particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
NDP6020P Features

-24 A, -20 V. RDS(ON)= 0.05 W @ VGS= -4.5 V.
RDS(ON)= 0.07W @ VGS= -2.7 V.
RDS(ON)= 0.075 W @ VGS= -2.5 V.
Critical DC electrical parameters specified at elevated temperature.
Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
175°C maximum junction temperature rating.
High density cell design for extremely low RDS(ON).
TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.
NDP6020P Applications

Automotive,
Power Management,
Motor Drive & Control
Data center & enterprise computing
Enterprise machine
NDP6020P More Descriptions
P-Channel Logic Level Enhancement Mode Field Effect Transistor -20V, -24A, 50mΩ
Trans MOSFET P-CH 20V 24A Automotive 3-Pin(3 Tab) TO-220AB Rail
P-Channel 20 V 0.05 O Flange Mount Mosfet - TO-220
20V 24A 50m¦¸@4.5V,12A 60W 1V@250¦ÌA P Channel TO-220(TO-220-3) MOSFETs ROHS
Power Field-Effect Transistor, 24A I(D), 20V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, P, TO-220; Transistor Polarity:P Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:20V; On Resistance Rds(on):75mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-700mV; Power Dissipation Pd:60W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:-24A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Pin Configuration:a; Pin Format:1G,(2 Tab)D, 3S; Power Dissipation Pd:60W; Power Dissipation Pd:50W; Power Dissipation Ptot Max:50W; Pulse Current Idm:70A; Termination Type:Through Hole; Voltage Vds:20V; Voltage Vds Typ:-20V; Voltage Vgs Max:-700mV; Voltage Vgs Rds on Measurement:-4.5V
These logic level P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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