ON Semiconductor MMBTA63LT1
- Part Number:
- MMBTA63LT1
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2466893-MMBTA63LT1
- Description:
- TRANS PNP DARL 30V 0.5A SOT23
- Datasheet:
- MMBT,SMMBTA(63,64)LT1G
ON Semiconductor MMBTA63LT1 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MMBTA63LT1.
- Lifecycle StatusLAST SHIPMENTS (Last Updated: 2 days ago)
- Package / CaseSOT-23-3
- Surface MountYES
- Number of Pins3
- PackagingCut Tape (CT)
- Published2007
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- HTS Code8541.21.00.75
- SubcategoryOther Transistors
- Voltage - Rated DC-30V
- Max Power Dissipation225mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)240
- Reach Compliance Codenot_compliant
- Current Rating-500mA
- Time@Peak Reflow Temperature-Max (s)30
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- PolarityPNP
- Element ConfigurationSingle
- Power Dissipation225mW
- Collector Emitter Voltage (VCEO)1.5V
- Max Collector Current500mA
- Collector Emitter Breakdown Voltage30V
- Transition Frequency125MHz
- Collector Base Voltage (VCBO)30V
- Emitter Base Voltage (VEBO)10V
- DC Current Gain-Min (hFE)10000
- Continuous Collector Current-500mA
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
MMBTA63LT1 Overview
A -500mA continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 10V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -500mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 125MHz.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
MMBTA63LT1 Features
the emitter base voltage is kept at 10V
the current rating of this device is -500mA
a transition frequency of 125MHz
MMBTA63LT1 Applications
There are a lot of ON Semiconductor
MMBTA63LT1 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
A -500mA continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 10V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -500mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 125MHz.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
MMBTA63LT1 Features
the emitter base voltage is kept at 10V
the current rating of this device is -500mA
a transition frequency of 125MHz
MMBTA63LT1 Applications
There are a lot of ON Semiconductor
MMBTA63LT1 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MMBTA63LT1 More Descriptions
Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AF
PNP Bipolar Darlington Transistor
TRANS PNP DARL 30V 0.5A SOT23
PNP Bipolar Darlington Transistor
TRANS PNP DARL 30V 0.5A SOT23
The three parts on the right have similar specifications to MMBTA63LT1.
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ImagePart NumberManufacturerLifecycle StatusPackage / CaseSurface MountNumber of PinsPackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishMax Operating TemperatureMin Operating TemperatureHTS CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeCurrent RatingTime@Peak Reflow Temperature-Max (s)Pin CountQualification StatusNumber of ElementsPolarityElement ConfigurationPower DissipationCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageTransition FrequencyCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)DC Current Gain-Min (hFE)Continuous Collector CurrentRoHS StatusLead FreeFactory Lead TimeMountMounting TypeTransistor Element MaterialOperating TemperatureJESD-30 CodeConfigurationPower - MaxTransistor ApplicationPolarity/Channel TypeTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcFrequency - TransitionTurn Off Time-Max (toff)Turn On Time-Max (ton)Base Part NumberVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Power Dissipation-Max (Abs)Supplier Device PackageWeightFrequencyGain Bandwidth ProductMax FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltagehFE MinHeightLengthWidthView Compare
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MMBTA63LT1LAST SHIPMENTS (Last Updated: 2 days ago)SOT-23-3YES3Cut Tape (CT)2007e0noObsolete1 (Unlimited)3EAR99Tin/Lead (Sn/Pb)150°C-55°C8541.21.00.75Other Transistors-30V225mWDUALGULL WING240not_compliant-500mA303Not Qualified1PNPSingle225mW1.5V500mA30V125MHz30V10V10000-500mANon-RoHS CompliantContains Lead---------------------------------
-
-TO-236-3, SC-59, SOT-23-3--Tape & Reel (TR)2011e3-Active1 (Unlimited)3-Tin (Sn)---Other Transistors-225mWDUALGULL WINGNOT SPECIFIED--NOT SPECIFIED--1---1V600mA40V300MHz----ROHS3 Compliant-10 WeeksSurface MountSurface MountSILICON-55°C~150°C TJR-PDSO-G3SINGLE300mWSWITCHINGNPNNPN100 @ 150mA 10mV10nA1V @ 50mA, 500mA300MHz285ns35ns---------------
-
-SOT-523YES-Tape & Reel (TR)2005e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn)---Other Transistors--DUALGULL WING260--103Not Qualified1------300MHz----ROHS3 Compliant-12 Weeks-Surface MountSILICON-55°C~150°C TJR-PDSO-G3SINGLE150mWAMPLIFIERNPNNPN75 @ 10mA 10V100nA1V @ 50mA, 500mA300MHz285ns35nsMMBT2222A40V600mA0.35W-----------
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-SC-89, SOT-490-3Tape & Reel (TR)2004--Last Time Buy1 (Unlimited)---150°C-55°C---250mW--------1NPNSingle250mW40V600mA40V-75V6V--ROHS3 CompliantLead Free16 WeeksSurface MountSurface Mount-150°C TJ--250mW--NPN100 @ 150mA 1V-1V @ 50mA, 500mA300MHz--MMBT222240V600mA-SOT-523F30mg300MHz300MHz100MHz1V40V75780μm1.7mm980μm
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