Infineon Technologies MMBTA14LT1HTSA1

Name: MMBTA14LT1HTSA1
Brand: Infineon Technologies
SKU: 2476442-MMBTA14LT1HTSA1
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: MMBTA14LT1HTSA1

Manufacturer:: Infineon Technologies

Ventron No:: 2476442-MMBTA14LT1HTSA1

Description:: TRANS NPN DARL 30V 0.3A SOT-23

ECAD Model:

Datasheet:: MMBTA14LT1HTSA1

Specifications

Infineon Technologies MMBTA14LT1HTSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies MMBTA14LT1HTSA1.

Factory Lead Time
26 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Supplier Device Package
SOT-23-3
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2007
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Voltage - Rated DC
30V
Max Power Dissipation
330mW
Current Rating
300mA
Base Part Number
MMBTA
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Power - Max
330mW
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
30V
Max Collector Current
300mA
DC Current Gain (hFE) (Min) @ Ic, Vce
20000 @ 100mA 5V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
1.5V @ 100μA, 100mA
Collector Emitter Breakdown Voltage
30V
Voltage - Collector Emitter Breakdown (Max)
30V
Current - Collector (Ic) (Max)
300mA
Collector Emitter Saturation Voltage
1.5V
Max Breakdown Voltage
30V
Frequency - Transition
125MHz
Collector Base Voltage (VCBO)
30V
Emitter Base Voltage (VEBO)
10V
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

MMBTA14LT1HTSA1 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 20000 @ 100mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.5V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.5V @ 100μA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 10V.Its current rating is 300mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Single BJT transistor can take a breakdown input voltage of 30V volts.SOT-23-3 is the supplier device package for this product.This device displays a 30V maximum voltage - Collector Emitter Breakdown.During maximum operation, collector current can be as low as 300mA volts.

MMBTA14LT1HTSA1 Features
the DC current gain for this device is 20000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is 300mA
the supplier device package of SOT-23-3

MMBTA14LT1HTSA1 Applications
There are a lot of Infineon Technologies
MMBTA14LT1HTSA1 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

MMBTA14LT1HTSA1 More Descriptions

NPN Silicon Darlington Transistor 30V 300mA 3-Pin SOT-23
TRANS NPN DARL 30V 0.3A SOT-23
Contact for details

Product Comparison

The three parts on the right have similar specifications to MMBTA14LT1HTSA1.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Supplier Device Package

Operating Temperature

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

Max Operating Temperature

Min Operating Temperature

Voltage - Rated DC

Max Power Dissipation

Current Rating

Base Part Number

Number of Elements

Polarity

Element Configuration

Power - Max

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

Collector Emitter Saturation Voltage

Max Breakdown Voltage

Frequency - Transition

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

RoHS Status

Lead Free

Weight

Transistor Element Material

Series

JESD-609 Code

Number of Terminations

ECCN Code

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Frequency

Time@Peak Reflow Temperature-Max (s)

Pin Count

Qualification Status

Power Dissipation

Transistor Application

Gain Bandwidth Product

Polarity/Channel Type

Transition Frequency

hFE Min

Continuous Collector Current

Height

Length

Width

REACH SVHC

Pbfree Code

Terminal Finish

Subcategory

Radiation Hardening

Termination

Max Junction Temperature (Tj)

Turn On Time-Max (ton)

View Compare
MMBTA14LT1HTSA1

Infineon Technologies

26 Weeks

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

SOT-23-3

150°C TJ

Tape & Reel (TR)

2007

Not For New Designs

1 (Unlimited)

150°C

-65°C

30V

330mW

300mA

MMBTA

1

NPN

Single

330mW

NPN - Darlington

30V

300mA

20000 @ 100mA 5V

100nA ICBO

1.5V @ 100μA, 100mA

30V

30V

300mA

1.5V

30V

125MHz

30V

10V

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
MMBT4124-7

Diodes Incorporated

-

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

-

-55°C~150°C TJ

Tape & Reel (TR)

2005

Obsolete

1 (Unlimited)

-

-

25V

300mW

200mA

MMBT4124

1

-

Single

-

NPN

25V

200mA

120 @ 2mA 1V

50nA ICBO

300mV @ 5mA, 50mA

25V

-

-

-

25V

-

30V

5V

Non-RoHS Compliant

Contains Lead

7.994566mg

SILICON

Automotive, AEC-Q101

e0

3

EAR99

DUAL

GULL WING

235

not_compliant

300MHz

10

3

Not Qualified

300mW

SWITCHING

300MHz

NPN

300MHz

120

200mA

1mm

3.05mm

1.4mm

No SVHC

-

-

-

-

-

-

-

MMBTA14LT1HTSA1 vs MMBT4124-7
MMBT4126-7-F

Diodes Incorporated

15 Weeks

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

-

-55°C~150°C TJ

Tape & Reel (TR)

2008

Active

1 (Unlimited)

-

-

-25V

300mW

-200mA

MMBT4126

1

-

Single

-

PNP

25V

200mA

120 @ 2mA 1V

50nA ICBO

400mV @ 5mA, 50mA

25V

-

-

-400mV

25V

-

25V

-4V

ROHS3 Compliant

Lead Free

7.994566mg

SILICON

Automotive, AEC-Q101

e3

3

EAR99

DUAL

GULL WING

260

-

250MHz

40

3

-

300mW

SWITCHING

250MHz

PNP

250MHz

120

-200mA

1mm

3.05mm

1.4mm

No SVHC

yes

Matte Tin (Sn)

Other Transistors

No

-

-

-

MMBTA14LT1HTSA1 vs MMBT4126-7-F
MMBT2907AT-7-F

Diodes Incorporated

15 Weeks

Surface Mount

Surface Mount

SOT-523

3

-

-55°C~150°C TJ

Tape & Reel (TR)

2007

Active

1 (Unlimited)

-

-

-60V

150mW

-600mA

MMBT2907A

1

-

Single

-

PNP

-60V

-600mA

100 @ 150mA 10V

10nA ICBO

1.6V @ 50mA, 500mA

-60V

-

600mA

-1.6V

60V

-

-60V

-5V

ROHS3 Compliant

Lead Free

2.012816mg

SILICON

Automotive, AEC-Q101

e3

3

EAR99

DUAL

GULL WING

260

-

200MHz

30

3

-

150mW

-

200MHz

PNP

200MHz

100

-600mA

900μm

1.6mm

800μm

No SVHC

yes

Matte Tin (Sn) - annealed

Other Transistors

No

SMD/SMT

150°C

45ns

MMBTA14LT1HTSA1 vs MMBT2907AT-7-F

Certification

Related parts for MMBTA14LT1HTSA1

MMBT3906-7

Diodes Incorporated

TRANS PNP 40V 0.2A SOT23-3
MMBT2222A-G

Comchip Technology

TRANS NPN 40V 0.6A SOT-23
MMBT2222AT-TP

Micro Commercial Co

TRANS NPN 40V 0.6A SOT-523
MMBT3904T-7-F

Diodes Incorporated

TRANS NPN 40V 0.2A SOT523
MMBT4124-7

Diodes Incorporated

TRANS NPN 25V 0.2A SMD SOT23-3
MMBT4126-7-F

Diodes Incorporated

TRANS PNP 25V 0.2A SMD SOT23-3
MMBT3904-7-F

Diodes Incorporated

TRANS NPN 40V 0.2A SMD SOT23-3
MMBT2907AT-7-F

Diodes Incorporated

TRANS PNP 60V 0.6A SOT523
MMBT3904_D87Z

Fairchild/ON Semiconductor

TRANS NPN 40V 0.2A SOT-23
MMBT2222AT

Fairchild/ON Semiconductor

TRANS NPN 40V 0.6A SOT523F

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MMBTA14~~(12)~~
MMBTA1~~(26)~~
MMBTA~~(144)~~
MMBT~~(187)~~
MMB~~(235)~~

Part Number	Manufacturers	Description	Stock	Price
MMBTA14LT1HTSA1 DISTI #	Infineon Technologies AG	TRANS NPN DARL 30V 0.3A SOT-23 RoHS: Compliant	0	18000 $0.07405
MMBTA14LT1HTSA1 DISTI #	Infineon Technologies AG	TRANS NPN DARL 30V 0.3A SOT-23 RoHS: Compliant	0
MMBTA14LT1HTSA1 DISTI #	Infineon Technologies AG	TRANS NPN DARL 30V 0.3A SOT-23 RoHS: Compliant	0
MMBTA 14 LT1XT DISTI #	Infineon Technologies AG	Trans Darlington NPN 30V 0.3A 3-Pin SOT-23 T/R - T RoHS: Compliant	0	18000 $0.0589 24000 $0.0569 42000 $0.0549 90000 $0.0529 180000 $0.0519
MMBTA 14 LT1 DISTI #	Infineon Technologies AG	Darlington Transistors AF Darlington NPN 30V 0.3A RoHS: Compliant	0
MMBTA14LT1HTSA1 DISTI #	Infineon Technologies AG	Darlington Transistors AF Darlington NPN 30V 0.3A RoHS: Compliant	0
MMBTA14LT1HTSA1 DISTI #	Infineon Technologies AG	RoHS: Not Compliant	60000	1 $0.07 25 $0.07 100 $0.06 500 $0.06 1000 $0.06

Infineon Technologies MMBTA14LT1HTSA1

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