ON Semiconductor MMBTA06WT1
- Part Number:
- MMBTA06WT1
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2467012-MMBTA06WT1
- Description:
- TRANS NPN 80V 0.5A SC70-3
- ECAD Model:
-
- Datasheet:
- MMBT/SMMBTA06W
ON Semiconductor MMBTA06WT1 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MMBTA06WT1.
- Mounting TypeSurface Mount
- Package / CaseSC-70, SOT-323
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishTIN LEAD
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)240
- Time@Peak Reflow Temperature-Max (s)30
- Pin Count3
- JESD-30 CodeR-PDSO-G3
- Qualification StatusCOMMERCIAL
- Number of Elements1
- ConfigurationSINGLE
- Power - Max150mW
- Transistor ApplicationAMPLIFIER
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 100mA 1V
- Current - Collector Cutoff (Max)100nA
- Vce Saturation (Max) @ Ib, Ic250mV @ 10mA, 100mA
- Voltage - Collector Emitter Breakdown (Max)80V
- Current - Collector (Ic) (Max)500mA
- Transition Frequency100MHz
- Frequency - Transition100MHz
- RoHS StatusNon-RoHS Compliant
MMBTA06WT1 Overview
In this device, the DC current gain is 100 @ 100mA 1V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 10mA, 100mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.There is a 80V maximal voltage in the device due to collector-emitter breakdown.
MMBTA06WT1 Features
the DC current gain for this device is 100 @ 100mA 1V
the vce saturation(Max) is 250mV @ 10mA, 100mA
a transition frequency of 100MHz
MMBTA06WT1 Applications
There are a lot of Rochester Electronics, LLC
MMBTA06WT1 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 100 @ 100mA 1V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 10mA, 100mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.There is a 80V maximal voltage in the device due to collector-emitter breakdown.
MMBTA06WT1 Features
the DC current gain for this device is 100 @ 100mA 1V
the vce saturation(Max) is 250mV @ 10mA, 100mA
a transition frequency of 100MHz
MMBTA06WT1 Applications
There are a lot of Rochester Electronics, LLC
MMBTA06WT1 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MMBTA06WT1 More Descriptions
Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon
NPN Bipolar Transistor
TRANS NPN 80V 500MA SC70-3
NPN Bipolar Transistor
TRANS NPN 80V 500MA SC70-3
The three parts on the right have similar specifications to MMBTA06WT1.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower - MaxTransistor ApplicationPolarity/Channel TypeTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Transition FrequencyFrequency - TransitionRoHS StatusFactory Lead TimeMountNumber of PinsWeightSeriesPublishedECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationCurrent RatingFrequencyBase Part NumberElement ConfigurationPower DissipationGain Bandwidth ProductCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinContinuous Collector CurrentHeightLengthWidthREACH SVHCRadiation HardeningLead FreeTerminationMax Junction Temperature (Tj)Turn On Time-Max (ton)View Compare
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MMBTA06WT1Surface MountSC-70, SOT-323YESSILICON-55°C~150°C TJTape & Reel (TR)e0noObsolete1 (Unlimited)3TIN LEADDUALGULL WING240303R-PDSO-G3COMMERCIAL1SINGLE150mWAMPLIFIERNPNNPN100 @ 100mA 1V100nA250mV @ 10mA, 100mA80V500mA100MHz100MHzNon-RoHS Compliant----------------------------------- -
Surface MountTO-236-3, SC-59, SOT-23-3-SILICON-55°C~150°C TJTape & Reel (TR)e3yesActive1 (Unlimited)3Matte Tin (Sn)DUALGULL WING260403--1--SWITCHINGPNPPNP120 @ 2mA 1V50nA ICBO400mV @ 5mA, 50mA--250MHz-ROHS3 Compliant15 WeeksSurface Mount37.994566mgAutomotive, AEC-Q1012008EAR99Other Transistors-25V300mW-200mA250MHzMMBT4126Single300mW250MHz25V200mA25V-400mV25V25V-4V120-200mA1mm3.05mm1.4mmNo SVHCNoLead Free---
-
Surface MountSOT-523-SILICON-55°C~150°C TJTape & Reel (TR)e3yesActive1 (Unlimited)3Matte Tin (Sn) - annealedDUALGULL WING260303--1---PNPPNP100 @ 150mA 10V10nA ICBO1.6V @ 50mA, 500mA-600mA200MHz-ROHS3 Compliant15 WeeksSurface Mount32.012816mgAutomotive, AEC-Q1012007EAR99Other Transistors-60V150mW-600mA200MHzMMBT2907ASingle150mW200MHz-60V-600mA-60V-1.6V60V-60V-5V100-600mA900μm1.6mm800μmNo SVHCNoLead FreeSMD/SMT150°C45ns
-
Surface MountTO-236-3, SC-59, SOT-23-3---55°C~150°C TJTape & Reel (TR)--Obsolete1 (Unlimited)-----------350mW--NPN100 @ 10mA 1V-300mV @ 5mA, 50mA40V200mA-300MHz-------------MMBT3904---------------------
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