Diodes Incorporated MMBTA06-7-F
- Part Number:
- MMBTA06-7-F
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2462980-MMBTA06-7-F
- Description:
- TRANS NPN 80V 0.5A SOT23-3
- Datasheet:
- MMBTA06-7-F
Diodes Incorporated MMBTA06-7-F technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated MMBTA06-7-F.
- Factory Lead Time15 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesAutomotive, AEC-Q101
- Published2009
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- TerminationSMD/SMT
- ECCN CodeEAR99
- Additional FeatureHIGH RELIABILITY
- SubcategoryOther Transistors
- Voltage - Rated DC80V
- Max Power Dissipation300mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating500mA
- Frequency100MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberMMBTA06
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation310mW
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product100MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)80V
- Max Collector Current500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 100mA 1V
- Current - Collector Cutoff (Max)100nA
- Vce Saturation (Max) @ Ib, Ic250mV @ 10mA, 100mA
- Collector Emitter Breakdown Voltage80V
- Transition Frequency100MHz
- Collector Emitter Saturation Voltage250mV
- Max Breakdown Voltage80V
- Collector Base Voltage (VCBO)80V
- Emitter Base Voltage (VEBO)4V
- hFE Min100
- Max Junction Temperature (Tj)150°C
- Continuous Collector Current500mA
- Height1.1mm
- Length3.05mm
- Width1.4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MMBTA06-7-F Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 100mA 1V DC current gain.As it features a collector emitter saturation voltage of 250mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at 500mA.Keeping the emitter base voltage at 4V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 80V volts.When collector current reaches its maximum, it can reach 500mA volts.
MMBTA06-7-F Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
a transition frequency of 100MHz
MMBTA06-7-F Applications
There are a lot of Diodes Incorporated
MMBTA06-7-F applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 100mA 1V DC current gain.As it features a collector emitter saturation voltage of 250mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at 500mA.Keeping the emitter base voltage at 4V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 80V volts.When collector current reaches its maximum, it can reach 500mA volts.
MMBTA06-7-F Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
a transition frequency of 100MHz
MMBTA06-7-F Applications
There are a lot of Diodes Incorporated
MMBTA06-7-F applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MMBTA06-7-F More Descriptions
Transistor General Purpose BJT NPN 80 Volt 0.5 Amp 3-Pin SOT-23 Tape And Reel
MMBTA06 Series NPN 80 V 300 mW Small Signal Transistor Surface Mount- SOT-23-3
Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon
Transistor NPN 80V 0.5A SOT23 | Diodes Inc MMBTA06-7-F
Transistor, NPN, SOT23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:100MHz; Power Dissipation Pd:300mW;
TRANSISTOR, NPN, SOT23; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: 100MHz; Power Dissipation Pd: 300mW; DC Collector Current: 500mA; DC Current Gain hFE: 100hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on): 250mV; Current Ic Continuous a Max: 500mA; Gain Bandwidth ft Typ: 100MHz; Hfe Min: 100; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Surface Mount Device; Transistor Type: Small Signal
MMBTA06 Series NPN 80 V 300 mW Small Signal Transistor Surface Mount- SOT-23-3
Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon
Transistor NPN 80V 0.5A SOT23 | Diodes Inc MMBTA06-7-F
Transistor, NPN, SOT23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:100MHz; Power Dissipation Pd:300mW;
TRANSISTOR, NPN, SOT23; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: 100MHz; Power Dissipation Pd: 300mW; DC Collector Current: 500mA; DC Current Gain hFE: 100hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on): 250mV; Current Ic Continuous a Max: 500mA; Gain Bandwidth ft Typ: 100MHz; Hfe Min: 100; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Surface Mount Device; Transistor Type: Small Signal
The three parts on the right have similar specifications to MMBTA06-7-F.
-
ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationECCN CodeAdditional FeatureSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinMax Junction Temperature (Tj)Continuous Collector CurrentHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSurface MountTerminal FinishJESD-30 CodeQualification StatusConfigurationPower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionPower Dissipation-Max (Abs)Turn Off Time-Max (toff)Turn On Time-Max (ton)Supplier Device PackageMax Operating TemperatureMin Operating TemperaturePolarityMax FrequencyView Compare
-
MMBTA06-7-F15 WeeksTinSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJTape & Reel (TR)Automotive, AEC-Q1012009e3yesActive1 (Unlimited)3SMD/SMTEAR99HIGH RELIABILITYOther Transistors80V300mWDUALGULL WING260500mA100MHz40MMBTA0631Single310mWSWITCHING100MHzNPNNPN80V500mA100 @ 100mA 1V100nA250mV @ 10mA, 100mA80V100MHz250mV80V80V4V100150°C500mA1.1mm3.05mm1.4mmNo SVHCNoROHS3 CompliantLead Free------------------
-
12 Weeks--Surface MountSOT-523--SILICON-55°C~150°C TJTape & Reel (TR)-2005e3yesActive1 (Unlimited)3-EAR99-Other Transistors--DUALGULL WING260--10MMBT2222A31--AMPLIFIER-NPNNPN--75 @ 10mA 10V100nA1V @ 50mA, 500mA-300MHz------------ROHS3 Compliant-YESMatte Tin (Sn)R-PDSO-G3Not QualifiedSINGLE150mW40V600mA300MHz0.35W285ns35ns-----
-
15 Weeks-Surface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJTape & Reel (TR)Automotive, AEC-Q1012008e3yesActive1 (Unlimited)3-EAR99-Other Transistors-25V300mWDUALGULL WING260-200mA250MHz40MMBT412631Single300mWSWITCHING250MHzPNPPNP25V200mA120 @ 2mA 1V50nA ICBO400mV @ 5mA, 50mA25V250MHz-400mV25V25V-4V120--200mA1mm3.05mm1.4mmNo SVHCNoROHS3 CompliantLead Free-Matte Tin (Sn)---------------
-
16 Weeks-Surface MountSurface MountSC-89, SOT-490330mg-150°C TJTape & Reel (TR)-2004--Last Time Buy1 (Unlimited)------250mW----300MHz-MMBT2222-1Single250mW-300MHz-NPN40V600mA100 @ 150mA 1V-1V @ 50mA, 500mA40V-1V40V75V6V75--780μm1.7mm980μm--ROHS3 CompliantLead Free-----250mW40V600mA300MHz---SOT-523F150°C-55°CNPN100MHz
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
29 November 2023
TDA7293 Audio Power Amplifier: Symbol, Features, Applications and TDA7293 vs TDA8954
Ⅰ. Overview of TDA7293Ⅱ. Symbol, footprint and pin configuration of TDA7293Ⅲ. Features of TDA7293Ⅳ. Technical parameters of TDA7293Ⅴ. What are the applications of TDA7293?Ⅵ. What is the difference... -
29 November 2023
All You Need to Know the CD4013 CMOS Dual D Flip Flop
Ⅰ. What is a D flip-flop?Ⅱ. Overview of CD4013Ⅲ. Pin configuration of CD4013Ⅳ. What are the features of CD4013?Ⅴ. How does the CD4013 work?Ⅵ. What are the applications... -
30 November 2023
LM2576 Voltage Regulator Equivalents, Internal Structure, Working Principle and More
Ⅰ. What is LM2576 voltage regulator?Ⅱ. What are the features of LM2576 voltage regulator?Ⅲ. Pin configuration of LM2576 voltage regulatorⅣ. Internal structure of LM2576 voltage regulatorⅤ. How does... -
30 November 2023
LM358 Dual Operational Amplifier Symbol, Features, LM393 vs LM358 and Applications
Ⅰ. Overview of LM358 operational amplifierⅡ. Features of LM358 operational amplifierⅢ. Symbol, footprint and pin configuration of LM358Ⅳ. Internal structure of LM358 chipⅤ. Working principle of LM358 operational...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.