MMBTA06-7-F

Diodes Incorporated MMBTA06-7-F

Part Number:
MMBTA06-7-F
Manufacturer:
Diodes Incorporated
Ventron No:
2462980-MMBTA06-7-F
Description:
TRANS NPN 80V 0.5A SOT23-3
ECAD Model:
Datasheet:
MMBTA06-7-F

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Specifications
Diodes Incorporated MMBTA06-7-F technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated MMBTA06-7-F.
  • Factory Lead Time
    15 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Number of Pins
    3
  • Weight
    7.994566mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    Automotive, AEC-Q101
  • Published
    2009
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Termination
    SMD/SMT
  • ECCN Code
    EAR99
  • Additional Feature
    HIGH RELIABILITY
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    80V
  • Max Power Dissipation
    300mW
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    500mA
  • Frequency
    100MHz
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    MMBTA06
  • Pin Count
    3
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    310mW
  • Transistor Application
    SWITCHING
  • Gain Bandwidth Product
    100MHz
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    80V
  • Max Collector Current
    500mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    100 @ 100mA 1V
  • Current - Collector Cutoff (Max)
    100nA
  • Vce Saturation (Max) @ Ib, Ic
    250mV @ 10mA, 100mA
  • Collector Emitter Breakdown Voltage
    80V
  • Transition Frequency
    100MHz
  • Collector Emitter Saturation Voltage
    250mV
  • Max Breakdown Voltage
    80V
  • Collector Base Voltage (VCBO)
    80V
  • Emitter Base Voltage (VEBO)
    4V
  • hFE Min
    100
  • Max Junction Temperature (Tj)
    150°C
  • Continuous Collector Current
    500mA
  • Height
    1.1mm
  • Length
    3.05mm
  • Width
    1.4mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
MMBTA06-7-F Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 100mA 1V DC current gain.As it features a collector emitter saturation voltage of 250mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at 500mA.Keeping the emitter base voltage at 4V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 80V volts.When collector current reaches its maximum, it can reach 500mA volts.

MMBTA06-7-F Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
a transition frequency of 100MHz


MMBTA06-7-F Applications
There are a lot of Diodes Incorporated
MMBTA06-7-F applications of single BJT transistors.


Inverter
Interface
Driver
Muting
MMBTA06-7-F More Descriptions
Transistor General Purpose BJT NPN 80 Volt 0.5 Amp 3-Pin SOT-23 Tape And Reel
MMBTA06 Series NPN 80 V 300 mW Small Signal Transistor Surface Mount- SOT-23-3
Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon
Transistor NPN 80V 0.5A SOT23 | Diodes Inc MMBTA06-7-F
Transistor, NPN, SOT23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:100MHz; Power Dissipation Pd:300mW;
TRANSISTOR, NPN, SOT23; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: 100MHz; Power Dissipation Pd: 300mW; DC Collector Current: 500mA; DC Current Gain hFE: 100hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on): 250mV; Current Ic Continuous a Max: 500mA; Gain Bandwidth ft Typ: 100MHz; Hfe Min: 100; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Surface Mount Device; Transistor Type: Small Signal
Product Comparison
The three parts on the right have similar specifications to MMBTA06-7-F.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Termination
    ECCN Code
    Additional Feature
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Frequency
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    Number of Elements
    Element Configuration
    Power Dissipation
    Transistor Application
    Gain Bandwidth Product
    Polarity/Channel Type
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Transition Frequency
    Collector Emitter Saturation Voltage
    Max Breakdown Voltage
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    hFE Min
    Max Junction Temperature (Tj)
    Continuous Collector Current
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Surface Mount
    Terminal Finish
    JESD-30 Code
    Qualification Status
    Configuration
    Power - Max
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Frequency - Transition
    Power Dissipation-Max (Abs)
    Turn Off Time-Max (toff)
    Turn On Time-Max (ton)
    Supplier Device Package
    Max Operating Temperature
    Min Operating Temperature
    Polarity
    Max Frequency
    View Compare
  • MMBTA06-7-F
    MMBTA06-7-F
    15 Weeks
    Tin
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    7.994566mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    Automotive, AEC-Q101
    2009
    e3
    yes
    Active
    1 (Unlimited)
    3
    SMD/SMT
    EAR99
    HIGH RELIABILITY
    Other Transistors
    80V
    300mW
    DUAL
    GULL WING
    260
    500mA
    100MHz
    40
    MMBTA06
    3
    1
    Single
    310mW
    SWITCHING
    100MHz
    NPN
    NPN
    80V
    500mA
    100 @ 100mA 1V
    100nA
    250mV @ 10mA, 100mA
    80V
    100MHz
    250mV
    80V
    80V
    4V
    100
    150°C
    500mA
    1.1mm
    3.05mm
    1.4mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MMBT2222AT-TP
    12 Weeks
    -
    -
    Surface Mount
    SOT-523
    -
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    -
    2005
    e3
    yes
    Active
    1 (Unlimited)
    3
    -
    EAR99
    -
    Other Transistors
    -
    -
    DUAL
    GULL WING
    260
    -
    -
    10
    MMBT2222A
    3
    1
    -
    -
    AMPLIFIER
    -
    NPN
    NPN
    -
    -
    75 @ 10mA 10V
    100nA
    1V @ 50mA, 500mA
    -
    300MHz
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    YES
    Matte Tin (Sn)
    R-PDSO-G3
    Not Qualified
    SINGLE
    150mW
    40V
    600mA
    300MHz
    0.35W
    285ns
    35ns
    -
    -
    -
    -
    -
  • MMBT4126-7-F
    15 Weeks
    -
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    7.994566mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    Automotive, AEC-Q101
    2008
    e3
    yes
    Active
    1 (Unlimited)
    3
    -
    EAR99
    -
    Other Transistors
    -25V
    300mW
    DUAL
    GULL WING
    260
    -200mA
    250MHz
    40
    MMBT4126
    3
    1
    Single
    300mW
    SWITCHING
    250MHz
    PNP
    PNP
    25V
    200mA
    120 @ 2mA 1V
    50nA ICBO
    400mV @ 5mA, 50mA
    25V
    250MHz
    -400mV
    25V
    25V
    -4V
    120
    -
    -200mA
    1mm
    3.05mm
    1.4mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    Matte Tin (Sn)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MMBT2222AT
    16 Weeks
    -
    Surface Mount
    Surface Mount
    SC-89, SOT-490
    3
    30mg
    -
    150°C TJ
    Tape & Reel (TR)
    -
    2004
    -
    -
    Last Time Buy
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    250mW
    -
    -
    -
    -
    300MHz
    -
    MMBT2222
    -
    1
    Single
    250mW
    -
    300MHz
    -
    NPN
    40V
    600mA
    100 @ 150mA 1V
    -
    1V @ 50mA, 500mA
    40V
    -
    1V
    40V
    75V
    6V
    75
    -
    -
    780μm
    1.7mm
    980μm
    -
    -
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    250mW
    40V
    600mA
    300MHz
    -
    -
    -
    SOT-523F
    150°C
    -55°C
    NPN
    100MHz
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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