Diodes Incorporated MMBTA05-7
- Part Number:
- MMBTA05-7
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 3585870-MMBTA05-7
- Description:
- TRANS NPN 60V 0.5A SOT23-3
- Datasheet:
- MMBTA05-7
Diodes Incorporated MMBTA05-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated MMBTA05-7.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Supplier Device PackageSOT-23-3
- Weight200.998119mg
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesAutomotive, AEC-Q101
- Published2009
- Part StatusDiscontinued
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Voltage - Rated DC60V
- Max Power Dissipation300mW
- Current Rating100mA
- Base Part NumberMMBTA05
- Number of Elements1
- PolarityNPN
- Element ConfigurationSingle
- Power - Max300mW
- Gain Bandwidth Product100MHz
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)60V
- Max Collector Current500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 100mA 1V
- Current - Collector Cutoff (Max)100nA
- Vce Saturation (Max) @ Ib, Ic250mV @ 10mA, 100mA
- Collector Emitter Breakdown Voltage60V
- Voltage - Collector Emitter Breakdown (Max)60V
- Current - Collector (Ic) (Max)500mA
- Collector Emitter Saturation Voltage250mV
- Max Breakdown Voltage60V
- Frequency - Transition100MHz
- Collector Base Voltage (VCBO)60V
- Emitter Base Voltage (VEBO)4V
- hFE Min100
- Continuous Collector Current500mA
- Height1mm
- Length3.05mm
- Width1.4mm
- REACH SVHCNo SVHC
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
MMBTA05-7 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 100mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 250mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 250mV @ 10mA, 100mA.Single BJT transistor is recommended to keep the continuous collector voltage at 500mA in order to achieve high efficiency.The emitter base voltage can be kept at 4V for high efficiency.The current rating of this fuse is 100mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The breakdown input voltage is 60V volts.This product comes in a SOT-23-3 device package from the supplier.Device displays Collector Emitter Breakdown (60V maximal voltage).Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
MMBTA05-7 Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 100mA
the supplier device package of SOT-23-3
MMBTA05-7 Applications
There are a lot of Diodes Incorporated
MMBTA05-7 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 100mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 250mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 250mV @ 10mA, 100mA.Single BJT transistor is recommended to keep the continuous collector voltage at 500mA in order to achieve high efficiency.The emitter base voltage can be kept at 4V for high efficiency.The current rating of this fuse is 100mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The breakdown input voltage is 60V volts.This product comes in a SOT-23-3 device package from the supplier.Device displays Collector Emitter Breakdown (60V maximal voltage).Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
MMBTA05-7 Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 100mA
the supplier device package of SOT-23-3
MMBTA05-7 Applications
There are a lot of Diodes Incorporated
MMBTA05-7 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MMBTA05-7 More Descriptions
TRANS NPN 60V 0.5A SOT23-3
BIPOLAR TRANSISTOR NPNSMD LF
French Electronic Distributor since 1988
BIPOLAR TRANSISTOR NPNSMD LF
French Electronic Distributor since 1988
The three parts on the right have similar specifications to MMBTA05-7.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageWeightOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsMax Operating TemperatureMin Operating TemperatureVoltage - Rated DCMax Power DissipationCurrent RatingBase Part NumberNumber of ElementsPolarityElement ConfigurationPower - MaxGain Bandwidth ProductTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Collector Emitter Saturation VoltageMax Breakdown VoltageFrequency - TransitionCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinContinuous Collector CurrentHeightLengthWidthREACH SVHCRoHS StatusLead FreeFactory Lead TimeContact PlatingTransistor Element MaterialJESD-609 CodePbfree CodeECCN CodeSubcategoryTerminal PositionTerminal FormPeak Reflow Temperature (Cel)FrequencyTime@Peak Reflow Temperature-Max (s)Pin CountPower DissipationPolarity/Channel TypeTransition FrequencyTurn Off Time-Max (toff)Turn On Time-Max (ton)Radiation HardeningMax FrequencyTerminationTerminal FinishMax Junction Temperature (Tj)View Compare
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MMBTA05-7Surface MountSurface MountTO-236-3, SC-59, SOT-23-33SOT-23-3200.998119mg-55°C~150°C TJTape & Reel (TR)Automotive, AEC-Q1012009Discontinued1 (Unlimited)3150°C-55°C60V300mW100mAMMBTA051NPNSingle300mW100MHzNPN60V500mA100 @ 100mA 1V100nA250mV @ 10mA, 100mA60V60V500mA250mV60V100MHz60V4V100500mA1mm3.05mm1.4mmNo SVHCNon-RoHS CompliantContains Lead------------------------
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Surface MountSurface MountSOT-5233-2.012816mg-55°C~150°C TJTape & Reel (TR)Automotive, AEC-Q1012007Active1 (Unlimited)3--40V150mW200mAMMBT39041-Single-300MHzNPN40V200mA100 @ 10mA 1V-300mV @ 5mA, 50mA40V--300mV40V-60V6V100200mA750μm1.6mm800μmNo SVHCROHS3 CompliantLead Free15 WeeksTinSILICONe3yesEAR99Other TransistorsDUALGULL WING260300MHz403150mWNPN300MHz250ns70nsNo----
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Surface MountSurface MountTO-236-3, SC-59, SOT-23-33SOT-23-37.994566mg-55°C~150°C TJTape & Reel (TR)Automotive, AEC-Q1012000Active1 (Unlimited)-150°C-55°C40V300mW-MMBT39041NPNSingle300mW300MHzNPN40V200mA100 @ 10mA 1V50nA ICBO300mV @ 5mA, 50mA40V40V200mA300mV40V300MHz60V6V100200mA1mm3.05mm1.4mmNo SVHCROHS3 CompliantLead Free15 WeeksTin--------300MHz--350mW----No300MHz---
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Surface MountSurface MountSOT-5233-2.012816mg-55°C~150°C TJTape & Reel (TR)Automotive, AEC-Q1012007Active1 (Unlimited)3---60V150mW-600mAMMBT2907A1-Single-200MHzPNP-60V-600mA100 @ 150mA 10V10nA ICBO1.6V @ 50mA, 500mA-60V-600mA-1.6V60V--60V-5V100-600mA900μm1.6mm800μmNo SVHCROHS3 CompliantLead Free15 Weeks-SILICONe3yesEAR99Other TransistorsDUALGULL WING260200MHz303150mWPNP200MHz-45nsNo-SMD/SMTMatte Tin (Sn) - annealed150°C
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