ON Semiconductor MMBT4403LT3G
- Part Number:
- MMBT4403LT3G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2845068-MMBT4403LT3G
- Description:
- TRANS PNP 40V 0.6A SOT-23
- Datasheet:
- MMBT4403LT3G
ON Semiconductor MMBT4403LT3G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MMBT4403LT3G.
- Lifecycle StatusACTIVE (Last Updated: 4 days ago)
- Factory Lead Time10 Weeks
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Surface MountYES
- Number of Pins3
- Weight4.535924g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2007
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Voltage - Rated DC-40V
- Max Power Dissipation225mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Current Rating600mA
- Frequency200MHz
- Base Part NumberMMBT4403
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation300mW
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product200MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)40V
- Max Collector Current600mA
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA 2V
- Vce Saturation (Max) @ Ib, Ic750mV @ 50mA, 500mA
- Collector Emitter Breakdown Voltage40V
- Transition Frequency200MHz
- Collector Emitter Saturation Voltage-750mV
- Max Breakdown Voltage40V
- Collector Base Voltage (VCBO)40V
- Emitter Base Voltage (VEBO)5V
- hFE Min30
- Turn Off Time-Max (toff)255ns
- Collector-Base Capacitance-Max8.5pF
- Height1.11mm
- Length3.04mm
- Width2.64mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MMBT4403LT3G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 150mA 2V DC current gain.As it features a collector emitter saturation voltage of -750mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 200MHz in the part.Single BJT transistor can be broken down at a voltage of 40V volts.When collector current reaches its maximum, it can reach 600mA volts.
MMBT4403LT3G Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of -750mV
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 600mA
a transition frequency of 200MHz
MMBT4403LT3G Applications
There are a lot of ON Semiconductor
MMBT4403LT3G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 150mA 2V DC current gain.As it features a collector emitter saturation voltage of -750mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 200MHz in the part.Single BJT transistor can be broken down at a voltage of 40V volts.When collector current reaches its maximum, it can reach 600mA volts.
MMBT4403LT3G Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of -750mV
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 600mA
a transition frequency of 200MHz
MMBT4403LT3G Applications
There are a lot of ON Semiconductor
MMBT4403LT3G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MMBT4403LT3G More Descriptions
MMBT Series 40 V 600 mA Surface Mount PNP Silicon Switching Transistor - SOT-23
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB
Transistor PNP 40V 600mA Switching SOT23 | ON Semiconductor MMBT4403LT3G
Trans GP BJT PNP 40V 0.6A Automotive 3-Pin SOT-23 T/R
TRANSISTOR, BIPOL, PNP, -40V; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -40V; Transition Frequency ft: 200MHz; Power Dissipation Pd: 225mW; DC Collector Current: -600mA; DC Current Gain hFE: 20hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB
Transistor PNP 40V 600mA Switching SOT23 | ON Semiconductor MMBT4403LT3G
Trans GP BJT PNP 40V 0.6A Automotive 3-Pin SOT-23 T/R
TRANSISTOR, BIPOL, PNP, -40V; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -40V; Transition Frequency ft: 200MHz; Power Dissipation Pd: 225mW; DC Collector Current: -600mA; DC Current Gain hFE: 20hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
The three parts on the right have similar specifications to MMBT4403LT3G.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormCurrent RatingFrequencyBase Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceVce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinTurn Off Time-Max (toff)Collector-Base Capacitance-MaxHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeMountSeriesPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Qualification StatusCurrent - Collector Cutoff (Max)Continuous Collector CurrentContact PlatingSupplier Device PackageMax Operating TemperatureMin Operating TemperaturePolarityPower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Max FrequencyFrequency - TransitionTerminationSubcategoryMax Junction Temperature (Tj)Turn On Time-Max (ton)View Compare
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MMBT4403LT3GACTIVE (Last Updated: 4 days ago)10 WeeksSurface MountTO-236-3, SC-59, SOT-23-3YES34.535924gSILICON-55°C~150°C TJTape & Reel (TR)2007e3yesActive1 (Unlimited)3EAR99Tin (Sn)-40V225mWDUALGULL WING600mA200MHzMMBT440331Single300mWSWITCHING200MHzPNPPNP40V600mA100 @ 150mA 2V750mV @ 50mA, 500mA40V200MHz-750mV40V40V5V30255ns8.5pF1.11mm3.04mm2.64mmNo SVHCNoROHS3 CompliantLead Free-----------------------
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--Surface MountTO-236-3, SC-59, SOT-23-3-37.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2005e0-Obsolete1 (Unlimited)3EAR99-25V300mWDUALGULL WING200mA300MHzMMBT412431Single300mWSWITCHING300MHzNPNNPN25V200mA120 @ 2mA 1V300mV @ 5mA, 50mA25V300MHz-25V30V5V120--1mm3.05mm1.4mmNo SVHC-Non-RoHS CompliantContains LeadSurface MountAutomotive, AEC-Q101235not_compliant10Not Qualified50nA ICBO200mA--------------
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-15 WeeksSurface MountTO-236-3, SC-59, SOT-23-3-37.994566mg--55°C~150°C TJTape & Reel (TR)2000--Active1 (Unlimited)---40V300mW---300MHzMMBT3904-1Single350mW-300MHz-NPN40V200mA100 @ 10mA 1V300mV @ 5mA, 50mA40V-300mV40V60V6V100--1mm3.05mm1.4mmNo SVHCNoROHS3 CompliantLead FreeSurface MountAutomotive, AEC-Q101----50nA ICBO200mATinSOT-23-3150°C-55°CNPN300mW40V200mA300MHz300MHz----
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-15 WeeksSurface MountSOT-523-32.012816mgSILICON-55°C~150°C TJTape & Reel (TR)2007e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn) - annealed-60V150mWDUALGULL WING-600mA200MHzMMBT2907A31Single150mW-200MHzPNPPNP-60V-600mA100 @ 150mA 10V1.6V @ 50mA, 500mA-60V200MHz-1.6V60V-60V-5V100--900μm1.6mm800μmNo SVHCNoROHS3 CompliantLead FreeSurface MountAutomotive, AEC-Q101260-30-10nA ICBO-600mA-------600mA--SMD/SMTOther Transistors150°C45ns
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