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MJF18008G

ON Semiconductor MJF18008G

Part Number:
MJF18008G
Manufacturer:
ON Semiconductor
Ventron No:
2845903-MJF18008G
Description:
TRANS NPN 450V 8A TO220FP
ECAD Model:
Datasheet:
MJF18008G

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Specifications
ON Semiconductor MJF18008G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJF18008G.
  • Lifecycle Status
    ACTIVE (Last Updated: 2 days ago)
  • Factory Lead Time
    2 Weeks
  • Contact Plating
    Tin
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3 Full Pack
  • Surface Mount
    NO
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -65°C~150°C TJ
  • Packaging
    Tube
  • Series
    SWITCHMODE™
  • Published
    2006
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Additional Feature
    UL RECOGNIZED
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    450V
  • Max Power Dissipation
    125W
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    8A
  • Frequency
    13MHz
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    3
  • Number of Elements
    1
  • Element Configuration
    Single
  • Case Connection
    ISOLATED
  • Power - Max
    45W
  • Transistor Application
    SWITCHING
  • Gain Bandwidth Product
    13MHz
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    450V
  • Max Collector Current
    8A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    14 @ 1A 5V
  • Current - Collector Cutoff (Max)
    100μA
  • JEDEC-95 Code
    TO-220AB
  • Vce Saturation (Max) @ Ib, Ic
    700mV @ 900mA, 4.5V
  • Collector Emitter Breakdown Voltage
    450V
  • Transition Frequency
    13MHz
  • Collector Emitter Saturation Voltage
    300mV
  • Collector Base Voltage (VCBO)
    1kV
  • Emitter Base Voltage (VEBO)
    9V
  • hFE Min
    14
  • Height
    16.12mm
  • Length
    10.63mm
  • Width
    4.9mm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
MJF18008G Overview
This device has a DC current gain of 14 @ 1A 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 300mV.A VCE saturation (Max) of 700mV @ 900mA, 4.5V means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 9V.This device has a current rating of 8A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 13MHz.A maximum collector current of 8A volts is possible.

MJF18008G Features
the DC current gain for this device is 14 @ 1A 5V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 700mV @ 900mA, 4.5V
the emitter base voltage is kept at 9V
the current rating of this device is 8A
a transition frequency of 13MHz


MJF18008G Applications
There are a lot of ON Semiconductor
MJF18008G applications of single BJT transistors.


Inverter
Interface
Driver
Muting
MJF18008G More Descriptions
Bipolar (BJT) Transistor NPN 450V 8A 13MHz 45W Through Hole TO-220FP
8.0 A, 450 V NPN Bipolar Power Transistor
Trans GP BJT NPN 450V 8A 3-Pin(3 Tab) TO-220 Full-Pak Rail - Rail/Tube
Power Bipolar Transistor, 8A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
ON Semi MJF18008G NPN High Voltage Bipolar Transistor, 8 A, 450 V, 3-Pin TO-220 | ON Semiconductor MJF18008G
450V 45W 8A 8@4.5A1V 13MHz NPN 300mV@2A200mA -65¡Í~ 150¡Í@(Tj) TO-220 Bipolar Transistors - BJT ROHS
TRANSISTOR, NPN, 450V, 8A, TO-220; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 450V; Transition Frequency ft: 13MHz; Power Dissipation Pd: 45W; DC Collector Current: 8A; DC Current Gain hFE: 5hFE; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: Lead (27-Jun-2018)
Bipolar Transistor, Npn, 450V, To-220; Transistor Polarity:Npn; Collector Emitter Voltage Max:450V; Continuous Collector Current:8A; Power Dissipation:45W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Product Range:-; Msl:- Rohs Compliant: Yes |Onsemi MJF18008G
NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF18008 have an applications specific state-of-the-art die designed for use in 220 V line-operated Switchmode Power supplies and electronic light ballasts. These high voltage/high speed transistors offer the following:
Product Comparison
The three parts on the right have similar specifications to MJF18008G.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mounting Type
    Package / Case
    Surface Mount
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Additional Feature
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Peak Reflow Temperature (Cel)
    Current Rating
    Frequency
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Number of Elements
    Element Configuration
    Case Connection
    Power - Max
    Transistor Application
    Gain Bandwidth Product
    Polarity/Channel Type
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    JEDEC-95 Code
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Transition Frequency
    Collector Emitter Saturation Voltage
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    hFE Min
    Height
    Length
    Width
    Radiation Hardening
    RoHS Status
    Lead Free
    Terminal Finish
    Reach Compliance Code
    Qualification Status
    HTS Code
    Polarity
    Power Dissipation
    Continuous Collector Current
    Weight
    REACH SVHC
    View Compare
  • MJF18008G
    MJF18008G
    ON Semiconductor
    ACTIVE (Last Updated: 2 days ago)
    2 Weeks
    Tin
    Through Hole
    TO-220-3 Full Pack
    NO
    3
    SILICON
    -65°C~150°C TJ
    Tube
    SWITCHMODE™
    2006
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    UL RECOGNIZED
    Other Transistors
    450V
    125W
    260
    8A
    13MHz
    40
    3
    1
    Single
    ISOLATED
    45W
    SWITCHING
    13MHz
    NPN
    NPN
    450V
    8A
    14 @ 1A 5V
    100μA
    TO-220AB
    700mV @ 900mA, 4.5V
    450V
    13MHz
    300mV
    1kV
    9V
    14
    16.12mm
    10.63mm
    4.9mm
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MJF18004
    MJF18004
    ON Semiconductor
    LAST SHIPMENTS (Last Updated: 1 week ago)
    -
    -
    Through Hole
    TO-220-3 Full Pack
    NO
    3
    SILICON
    -65°C~150°C TJ
    Tube
    SWITCHMODE™
    2006
    e0
    no
    Obsolete
    1 (Unlimited)
    3
    EAR99
    UL RECOGNIZED
    Other Transistors
    450V
    35W
    240
    5A
    13MHz
    30
    3
    1
    Single
    ISOLATED
    -
    SWITCHING
    13MHz
    NPN
    NPN
    450V
    5A
    14 @ 300mA 5V
    100μA
    TO-220AB
    750mV @ 500mA, 2.5A
    450V
    13MHz
    920mV
    1kV
    9V
    12
    -
    -
    -
    -
    Non-RoHS Compliant
    Contains Lead
    Tin/Lead (Sn/Pb)
    not_compliant
    Not Qualified
    -
    -
    -
    -
    -
    -
    MJF18008G vs MJF18004
  • MJF122
    MJF122
    ON Semiconductor
    LAST SHIPMENTS (Last Updated: 2 days ago)
    -
    -
    Through Hole
    TO-220-3 Full Pack
    NO
    3
    SILICON
    -65°C~150°C TJ
    Tube
    -
    2008
    e0
    no
    Obsolete
    1 (Unlimited)
    3
    EAR99
    UL RECOGNIZED
    Other Transistors
    100V
    2W
    240
    5A
    -
    30
    3
    1
    Single
    ISOLATED
    -
    SWITCHING
    -
    -
    NPN - Darlington
    3.5V
    5A
    2000 @ 3A 3V
    10μA
    TO-220AB
    3.5V @ 20mA, 5A
    100V
    4MHz
    -
    100V
    5V
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    Contains Lead
    Tin/Lead (Sn/Pb)
    not_compliant
    Not Qualified
    8541.29.00.95
    NPN
    30W
    5A
    -
    -
    MJF18008G vs MJF122
  • MJF15030G
    MJF15030G
    ON Semiconductor
    ACTIVE (Last Updated: 2 days ago)
    8 Weeks
    -
    Through Hole
    TO-220-3 Full Pack
    NO
    3
    SILICON
    -65°C~150°C TJ
    Tube
    -
    2000
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    UL RECOGNIZED
    Other Transistors
    150V
    2W
    260
    8A
    30MHz
    40
    3
    1
    Single
    ISOLATED
    -
    SWITCHING
    30MHz
    NPN
    NPN
    150V
    8A
    20 @ 4A 2V
    10μA
    -
    500mV @ 100mA, 1A
    150V
    30MHz
    500mV
    150V
    5V
    20
    9.24mm
    10.63mm
    4.9mm
    No
    ROHS3 Compliant
    Lead Free
    Tin (Sn)
    -
    -
    -
    -
    2W
    -
    4.535924g
    No SVHC
    MJF18008G vs MJF15030G
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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