ON Semiconductor MJF15030G
- Part Number:
- MJF15030G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2465459-MJF15030G
- Description:
- TRANS NPN 150V 8A TO220FP
- Datasheet:
- MJF15030G
ON Semiconductor MJF15030G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJF15030G.
- Lifecycle StatusACTIVE (Last Updated: 2 days ago)
- Factory Lead Time8 Weeks
- Mounting TypeThrough Hole
- Package / CaseTO-220-3 Full Pack
- Surface MountNO
- Number of Pins3
- Weight4.535924g
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingTube
- Published2000
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Additional FeatureUL RECOGNIZED
- SubcategoryOther Transistors
- Voltage - Rated DC150V
- Max Power Dissipation2W
- Peak Reflow Temperature (Cel)260
- Current Rating8A
- Frequency30MHz
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation2W
- Case ConnectionISOLATED
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product30MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)150V
- Max Collector Current8A
- DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 4A 2V
- Current - Collector Cutoff (Max)10μA
- Vce Saturation (Max) @ Ib, Ic500mV @ 100mA, 1A
- Collector Emitter Breakdown Voltage150V
- Transition Frequency30MHz
- Collector Emitter Saturation Voltage500mV
- Collector Base Voltage (VCBO)150V
- Emitter Base Voltage (VEBO)5V
- hFE Min20
- Height9.24mm
- Length10.63mm
- Width4.9mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MJF15030G Overview
In this device, the DC current gain is 20 @ 4A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 500mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 100mA, 1A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (8A).30MHz is present in the transition frequency.Maximum collector currents can be below 8A volts.
MJF15030G Features
the DC current gain for this device is 20 @ 4A 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 8A
a transition frequency of 30MHz
MJF15030G Applications
There are a lot of ON Semiconductor
MJF15030G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 20 @ 4A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 500mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 100mA, 1A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (8A).30MHz is present in the transition frequency.Maximum collector currents can be below 8A volts.
MJF15030G Features
the DC current gain for this device is 20 @ 4A 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 8A
a transition frequency of 30MHz
MJF15030G Applications
There are a lot of ON Semiconductor
MJF15030G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MJF15030G More Descriptions
ON Semi MJF15030G NPN Bipolar Transistor; 8 A; 150 V; 3-Pin TO-220
Trans GP BJT NPN 150V 8A 3-Pin(3 Tab) TO-220 Full-Pak Rail - Rail/Tube
MJF Series 150 V 8 A Flange Mount NPN Complementary Power Transistor - TO-220FP
8.0 A, 150 V NPN Bipolar Power Transistor
Power Bipolar Transistor, 8A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
10Ã×A 150V 36W 8A 20@4A2V 30MHz 500mV@1A100mA NPN -65¡Í~ 150¡Í@(Tj) TO-220-3 Bipolar Transistors - BJT ROHS
TRANSISTOR, NPN, 150V, 8A, TO220FP; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 150V; Transition Frequency ft: 30MHz; Power Dissipation Pd: 2W; DC Collector Current: 8A; DC Current Gain hFE: 30hFE; Transistor
For Isolated Package Applications Designed for general-purpose amplifier and switching applications wher mounting surface of the device is required to be electrically isolated from the heatsink or chassis.
Bipolar Transistor, Npn, 150V, To-220; Transistor Polarity:Npn; Collector Emitter Voltage Max:150V; Continuous Collector Current:8A; Power Dissipation:36W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Product Range:-; Msl:- Rohs Compliant: Yes |Onsemi MJF15030G.
Trans GP BJT NPN 150V 8A 3-Pin(3 Tab) TO-220 Full-Pak Rail - Rail/Tube
MJF Series 150 V 8 A Flange Mount NPN Complementary Power Transistor - TO-220FP
8.0 A, 150 V NPN Bipolar Power Transistor
Power Bipolar Transistor, 8A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
10Ã×A 150V 36W 8A 20@4A2V 30MHz 500mV@1A100mA NPN -65¡Í~ 150¡Í@(Tj) TO-220-3 Bipolar Transistors - BJT ROHS
TRANSISTOR, NPN, 150V, 8A, TO220FP; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 150V; Transition Frequency ft: 30MHz; Power Dissipation Pd: 2W; DC Collector Current: 8A; DC Current Gain hFE: 30hFE; Transistor
For Isolated Package Applications Designed for general-purpose amplifier and switching applications wher mounting surface of the device is required to be electrically isolated from the heatsink or chassis.
Bipolar Transistor, Npn, 150V, To-220; Transistor Polarity:Npn; Collector Emitter Voltage Max:150V; Continuous Collector Current:8A; Power Dissipation:36W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Product Range:-; Msl:- Rohs Compliant: Yes |Onsemi MJF15030G.
The three parts on the right have similar specifications to MJF15030G.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryVoltage - Rated DCMax Power DissipationPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeContact PlatingSeriesPower - MaxJEDEC-95 CodeHTS CodeReach Compliance CodeQualification StatusPolarityContinuous Collector CurrentIsolation VoltageView Compare
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MJF15030GACTIVE (Last Updated: 2 days ago)8 WeeksThrough HoleTO-220-3 Full PackNO34.535924gSILICON-65°C~150°C TJTube2000e3yesActive1 (Unlimited)3EAR99Tin (Sn)UL RECOGNIZEDOther Transistors150V2W2608A30MHz4031Single2WISOLATEDSWITCHING30MHzNPNNPN150V8A20 @ 4A 2V10μA500mV @ 100mA, 1A150V30MHz500mV150V5V209.24mm10.63mm4.9mmNo SVHCNoROHS3 CompliantLead Free-----------
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ACTIVE (Last Updated: 2 days ago)2 WeeksThrough HoleTO-220-3 Full PackNO3-SILICON-65°C~150°C TJTube2006e3yesActive1 (Unlimited)3EAR99-UL RECOGNIZEDOther Transistors450V125W2608A13MHz4031Single-ISOLATEDSWITCHING13MHzNPNNPN450V8A14 @ 1A 5V100μA700mV @ 900mA, 4.5V450V13MHz300mV1kV9V1416.12mm10.63mm4.9mm-NoROHS3 CompliantLead FreeTinSWITCHMODE™45WTO-220AB------
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LAST SHIPMENTS (Last Updated: 2 days ago)-Through HoleTO-220-3 Full PackNO3-SILICON-65°C~150°C TJTube2008e0noObsolete1 (Unlimited)3EAR99Tin/Lead (Sn/Pb)UL RECOGNIZEDOther Transistors100V2W2405A-3031Single30WISOLATEDSWITCHING--NPN - Darlington3.5V5A2000 @ 3A 3V10μA3.5V @ 20mA, 5A100V4MHz-100V5V------Non-RoHS CompliantContains Lead---TO-220AB8541.29.00.95not_compliantNot QualifiedNPN5A-
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ACTIVE (Last Updated: 2 days ago)2 WeeksThrough HoleTO-220-3 Full PackNO34.535924gSILICON-65°C~150°C TJTube2006e3yesActive1 (Unlimited)3EAR99Tin (Sn)UL RECOGNIZEDOther Transistors450V35W2605A13MHz4031Single280mWISOLATEDSWITCHING13MHzNPNNPN450V5A14 @ 300mA 5V100μA750mV @ 500mA, 2.5A450V13MHz920mV1kV9V129.24mm10.63mm4.9mmNo SVHCNoROHS3 CompliantLead Free-SWITCHMODE™-TO-220AB-----2kV
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