ON Semiconductor MJF122
- Part Number:
- MJF122
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2466880-MJF122
- Description:
- TRANS NPN DARL 100V 5A TO220FP
- Datasheet:
- MJF122
ON Semiconductor MJF122 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJF122.
- Lifecycle StatusLAST SHIPMENTS (Last Updated: 2 days ago)
- Mounting TypeThrough Hole
- Package / CaseTO-220-3 Full Pack
- Surface MountNO
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingTube
- Published2008
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- Additional FeatureUL RECOGNIZED
- HTS Code8541.29.00.95
- SubcategoryOther Transistors
- Voltage - Rated DC100V
- Max Power Dissipation2W
- Peak Reflow Temperature (Cel)240
- Reach Compliance Codenot_compliant
- Current Rating5A
- Time@Peak Reflow Temperature-Max (s)30
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- PolarityNPN
- Element ConfigurationSingle
- Power Dissipation30W
- Case ConnectionISOLATED
- Transistor ApplicationSWITCHING
- Transistor TypeNPN - Darlington
- Collector Emitter Voltage (VCEO)3.5V
- Max Collector Current5A
- DC Current Gain (hFE) (Min) @ Ic, Vce2000 @ 3A 3V
- Current - Collector Cutoff (Max)10μA
- JEDEC-95 CodeTO-220AB
- Vce Saturation (Max) @ Ib, Ic3.5V @ 20mA, 5A
- Collector Emitter Breakdown Voltage100V
- Transition Frequency4MHz
- Collector Base Voltage (VCBO)100V
- Emitter Base Voltage (VEBO)5V
- Continuous Collector Current5A
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
MJF122 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 2000 @ 3A 3V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 3.5V @ 20mA, 5A.Continuous collector voltages of 5A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 5A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 4MHz.During maximum operation, collector current can be as low as 5A volts.
MJF122 Features
the DC current gain for this device is 2000 @ 3A 3V
the vce saturation(Max) is 3.5V @ 20mA, 5A
the emitter base voltage is kept at 5V
the current rating of this device is 5A
a transition frequency of 4MHz
MJF122 Applications
There are a lot of ON Semiconductor
MJF122 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 2000 @ 3A 3V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 3.5V @ 20mA, 5A.Continuous collector voltages of 5A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 5A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 4MHz.During maximum operation, collector current can be as low as 5A volts.
MJF122 Features
the DC current gain for this device is 2000 @ 3A 3V
the vce saturation(Max) is 3.5V @ 20mA, 5A
the emitter base voltage is kept at 5V
the current rating of this device is 5A
a transition frequency of 4MHz
MJF122 Applications
There are a lot of ON Semiconductor
MJF122 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MJF122 More Descriptions
5.0 A, 100 V NPN Darlington Bipolar Power Transistor
Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
TRANS DARLINGTON NPN 100V 5A 3PIN TO-220
TRANS NPN DARL 100V 5A TO220FP
Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
TRANS DARLINGTON NPN 100V 5A 3PIN TO-220
TRANS NPN DARL 100V 5A TO220FP
The three parts on the right have similar specifications to MJF122.
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ImagePart NumberManufacturerLifecycle StatusMounting TypePackage / CaseSurface MountNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureHTS CodeSubcategoryVoltage - Rated DCMax Power DissipationPeak Reflow Temperature (Cel)Reach Compliance CodeCurrent RatingTime@Peak Reflow Temperature-Max (s)Pin CountQualification StatusNumber of ElementsPolarityElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)JEDEC-95 CodeVce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)Continuous Collector CurrentRoHS StatusLead FreeFactory Lead TimeContact PlatingSeriesFrequencyPower - MaxGain Bandwidth ProductPolarity/Channel TypeCollector Emitter Saturation VoltagehFE MinHeightLengthWidthRadiation HardeningWeightREACH SVHCIsolation VoltageView Compare
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MJF122LAST SHIPMENTS (Last Updated: 2 days ago)Through HoleTO-220-3 Full PackNO3SILICON-65°C~150°C TJTube2008e0noObsolete1 (Unlimited)3EAR99Tin/Lead (Sn/Pb)UL RECOGNIZED8541.29.00.95Other Transistors100V2W240not_compliant5A303Not Qualified1NPNSingle30WISOLATEDSWITCHINGNPN - Darlington3.5V5A2000 @ 3A 3V10μATO-220AB3.5V @ 20mA, 5A100V4MHz100V5V5ANon-RoHS CompliantContains Lead-----------------
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ACTIVE (Last Updated: 2 days ago)Through HoleTO-220-3 Full PackNO3SILICON-65°C~150°C TJTube2006e3yesActive1 (Unlimited)3EAR99-UL RECOGNIZED-Other Transistors450V125W260-8A403-1-Single-ISOLATEDSWITCHINGNPN450V8A14 @ 1A 5V100μATO-220AB700mV @ 900mA, 4.5V450V13MHz1kV9V-ROHS3 CompliantLead Free2 WeeksTinSWITCHMODE™13MHz45W13MHzNPN300mV1416.12mm10.63mm4.9mmNo---
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ACTIVE (Last Updated: 2 days ago)Through HoleTO-220-3 Full PackNO3SILICON-65°C~150°C TJTube2000e3yesActive1 (Unlimited)3EAR99Tin (Sn)UL RECOGNIZED-Other Transistors150V2W260-8A403-1-Single2WISOLATEDSWITCHINGNPN150V8A20 @ 4A 2V10μA-500mV @ 100mA, 1A150V30MHz150V5V-ROHS3 CompliantLead Free8 Weeks--30MHz-30MHzNPN500mV209.24mm10.63mm4.9mmNo4.535924gNo SVHC-
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ACTIVE (Last Updated: 2 days ago)Through HoleTO-220-3 Full PackNO3SILICON-65°C~150°C TJTube2006e3yesActive1 (Unlimited)3EAR99Tin (Sn)UL RECOGNIZED-Other Transistors450V35W260-5A403-1-Single280mWISOLATEDSWITCHINGNPN450V5A14 @ 300mA 5V100μATO-220AB750mV @ 500mA, 2.5A450V13MHz1kV9V-ROHS3 CompliantLead Free2 Weeks-SWITCHMODE™13MHz-13MHzNPN920mV129.24mm10.63mm4.9mmNo4.535924gNo SVHC2kV
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