MJF122

ON Semiconductor MJF122

Part Number:
MJF122
Manufacturer:
ON Semiconductor
Ventron No:
2466880-MJF122
Description:
TRANS NPN DARL 100V 5A TO220FP
ECAD Model:
Datasheet:
MJF122

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Specifications
ON Semiconductor MJF122 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJF122.
  • Lifecycle Status
    LAST SHIPMENTS (Last Updated: 2 days ago)
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3 Full Pack
  • Surface Mount
    NO
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -65°C~150°C TJ
  • Packaging
    Tube
  • Published
    2008
  • JESD-609 Code
    e0
  • Pbfree Code
    no
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • Additional Feature
    UL RECOGNIZED
  • HTS Code
    8541.29.00.95
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    100V
  • Max Power Dissipation
    2W
  • Peak Reflow Temperature (Cel)
    240
  • Reach Compliance Code
    not_compliant
  • Current Rating
    5A
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Pin Count
    3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Polarity
    NPN
  • Element Configuration
    Single
  • Power Dissipation
    30W
  • Case Connection
    ISOLATED
  • Transistor Application
    SWITCHING
  • Transistor Type
    NPN - Darlington
  • Collector Emitter Voltage (VCEO)
    3.5V
  • Max Collector Current
    5A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    2000 @ 3A 3V
  • Current - Collector Cutoff (Max)
    10μA
  • JEDEC-95 Code
    TO-220AB
  • Vce Saturation (Max) @ Ib, Ic
    3.5V @ 20mA, 5A
  • Collector Emitter Breakdown Voltage
    100V
  • Transition Frequency
    4MHz
  • Collector Base Voltage (VCBO)
    100V
  • Emitter Base Voltage (VEBO)
    5V
  • Continuous Collector Current
    5A
  • RoHS Status
    Non-RoHS Compliant
  • Lead Free
    Contains Lead
Description
MJF122 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 2000 @ 3A 3V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 3.5V @ 20mA, 5A.Continuous collector voltages of 5A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 5A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 4MHz.During maximum operation, collector current can be as low as 5A volts.

MJF122 Features
the DC current gain for this device is 2000 @ 3A 3V
the vce saturation(Max) is 3.5V @ 20mA, 5A
the emitter base voltage is kept at 5V
the current rating of this device is 5A
a transition frequency of 4MHz


MJF122 Applications
There are a lot of ON Semiconductor
MJF122 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
MJF122 More Descriptions
5.0 A, 100 V NPN Darlington Bipolar Power Transistor
Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
TRANS DARLINGTON NPN 100V 5A 3PIN TO-220
TRANS NPN DARL 100V 5A TO220FP
Product Comparison
The three parts on the right have similar specifications to MJF122.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Mounting Type
    Package / Case
    Surface Mount
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    HTS Code
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Qualification Status
    Number of Elements
    Polarity
    Element Configuration
    Power Dissipation
    Case Connection
    Transistor Application
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    JEDEC-95 Code
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Transition Frequency
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    Continuous Collector Current
    RoHS Status
    Lead Free
    Factory Lead Time
    Contact Plating
    Series
    Frequency
    Power - Max
    Gain Bandwidth Product
    Polarity/Channel Type
    Collector Emitter Saturation Voltage
    hFE Min
    Height
    Length
    Width
    Radiation Hardening
    Weight
    REACH SVHC
    Isolation Voltage
    View Compare
  • MJF122
    MJF122
    LAST SHIPMENTS (Last Updated: 2 days ago)
    Through Hole
    TO-220-3 Full Pack
    NO
    3
    SILICON
    -65°C~150°C TJ
    Tube
    2008
    e0
    no
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Tin/Lead (Sn/Pb)
    UL RECOGNIZED
    8541.29.00.95
    Other Transistors
    100V
    2W
    240
    not_compliant
    5A
    30
    3
    Not Qualified
    1
    NPN
    Single
    30W
    ISOLATED
    SWITCHING
    NPN - Darlington
    3.5V
    5A
    2000 @ 3A 3V
    10μA
    TO-220AB
    3.5V @ 20mA, 5A
    100V
    4MHz
    100V
    5V
    5A
    Non-RoHS Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MJF18008G
    ACTIVE (Last Updated: 2 days ago)
    Through Hole
    TO-220-3 Full Pack
    NO
    3
    SILICON
    -65°C~150°C TJ
    Tube
    2006
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    -
    UL RECOGNIZED
    -
    Other Transistors
    450V
    125W
    260
    -
    8A
    40
    3
    -
    1
    -
    Single
    -
    ISOLATED
    SWITCHING
    NPN
    450V
    8A
    14 @ 1A 5V
    100μA
    TO-220AB
    700mV @ 900mA, 4.5V
    450V
    13MHz
    1kV
    9V
    -
    ROHS3 Compliant
    Lead Free
    2 Weeks
    Tin
    SWITCHMODE™
    13MHz
    45W
    13MHz
    NPN
    300mV
    14
    16.12mm
    10.63mm
    4.9mm
    No
    -
    -
    -
  • MJF15030G
    ACTIVE (Last Updated: 2 days ago)
    Through Hole
    TO-220-3 Full Pack
    NO
    3
    SILICON
    -65°C~150°C TJ
    Tube
    2000
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    UL RECOGNIZED
    -
    Other Transistors
    150V
    2W
    260
    -
    8A
    40
    3
    -
    1
    -
    Single
    2W
    ISOLATED
    SWITCHING
    NPN
    150V
    8A
    20 @ 4A 2V
    10μA
    -
    500mV @ 100mA, 1A
    150V
    30MHz
    150V
    5V
    -
    ROHS3 Compliant
    Lead Free
    8 Weeks
    -
    -
    30MHz
    -
    30MHz
    NPN
    500mV
    20
    9.24mm
    10.63mm
    4.9mm
    No
    4.535924g
    No SVHC
    -
  • MJF18004G
    ACTIVE (Last Updated: 2 days ago)
    Through Hole
    TO-220-3 Full Pack
    NO
    3
    SILICON
    -65°C~150°C TJ
    Tube
    2006
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    UL RECOGNIZED
    -
    Other Transistors
    450V
    35W
    260
    -
    5A
    40
    3
    -
    1
    -
    Single
    280mW
    ISOLATED
    SWITCHING
    NPN
    450V
    5A
    14 @ 300mA 5V
    100μA
    TO-220AB
    750mV @ 500mA, 2.5A
    450V
    13MHz
    1kV
    9V
    -
    ROHS3 Compliant
    Lead Free
    2 Weeks
    -
    SWITCHMODE™
    13MHz
    -
    13MHz
    NPN
    920mV
    12
    9.24mm
    10.63mm
    4.9mm
    No
    4.535924g
    No SVHC
    2kV
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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