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MJF122G

ON Semiconductor MJF122G

Part Number:
MJF122G
Manufacturer:
ON Semiconductor
Ventron No:
2846053-MJF122G
Description:
TRANS NPN DARL 100V 5A TO220FP
ECAD Model:
Datasheet:
MJF122G

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Specifications
ON Semiconductor MJF122G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJF122G.
  • Lifecycle Status
    ACTIVE (Last Updated: 2 days ago)
  • Factory Lead Time
    8 Weeks
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3 Full Pack
  • Surface Mount
    NO
  • Number of Pins
    3
  • Weight
    2.299997g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -65°C~150°C TJ
  • Packaging
    Tube
  • Published
    2004
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Additional Feature
    UL RECOGNIZED
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    100V
  • Max Power Dissipation
    30W
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    5A
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    3
  • Number of Elements
    1
  • Polarity
    NPN
  • Element Configuration
    Single
  • Power Dissipation
    2W
  • Case Connection
    ISOLATED
  • Transistor Application
    SWITCHING
  • Transistor Type
    NPN - Darlington
  • Collector Emitter Voltage (VCEO)
    100V
  • Max Collector Current
    5A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    2000 @ 3A 3V
  • Current - Collector Cutoff (Max)
    10μA
  • JEDEC-95 Code
    TO-220AB
  • Vce Saturation (Max) @ Ib, Ic
    3.5V @ 20mA, 5A
  • Collector Emitter Breakdown Voltage
    100V
  • Collector Emitter Saturation Voltage
    2V
  • Collector Base Voltage (VCBO)
    100V
  • Emitter Base Voltage (VEBO)
    5V
  • hFE Min
    1000
  • Continuous Collector Current
    5A
  • Height
    9.24mm
  • Length
    10.63mm
  • Width
    4.9mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
MJF122G Overview
DC current gain in this device equals 2000 @ 3A 3V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 2V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 3.5V @ 20mA, 5A.Single BJT transistor is essential to maintain the continuous collector voltage at 5A to achieve high efficiency.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 5A current rating.In extreme cases, the collector current can be as low as 5A volts.

MJF122G Features
the DC current gain for this device is 2000 @ 3A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3.5V @ 20mA, 5A
the emitter base voltage is kept at 5V
the current rating of this device is 5A


MJF122G Applications
There are a lot of ON Semiconductor
MJF122G applications of single BJT transistors.


Inverter
Interface
Driver
Muting
MJF122G More Descriptions
5.0 A, 100 V NPN Darlington Bipolar Power Transistor
MJF Series 100 V 5 A PNP Complementary Power Darlington Transistor - TO-220
Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Trans Darlington NPN 100V 5A 3-Pin(3 Tab) TO-220 Full-Pak Rail - Rail/Tube
ON Semi MJF122G NPN Darlington Transistor, 8 A 100 V HFE:1000, 3-Pin TO-220 | ON Semiconductor MJF122G
100V 2000@3V,3A NPN 5A 2W TO-220 Darlington Transistors ROHS
BIPOLAR TRANSISTOR; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: -; Power Dissipation Pd: 30W; DC Collector Current: 5A; DC Current Gain hFE: 2000hFE; Transistor Case Style: TO-22
For Isolated Package Applications Designed for general-purpose amplifiers and switching applications where the mounting surface of the device is required to be electrically isolated from the heatsink or chassis.
Product Comparison
The three parts on the right have similar specifications to MJF122G.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mounting Type
    Package / Case
    Surface Mount
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Number of Elements
    Polarity
    Element Configuration
    Power Dissipation
    Case Connection
    Transistor Application
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    JEDEC-95 Code
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Collector Emitter Saturation Voltage
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    hFE Min
    Continuous Collector Current
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Series
    Reach Compliance Code
    Frequency
    Qualification Status
    Gain Bandwidth Product
    Polarity/Channel Type
    Transition Frequency
    HTS Code
    View Compare
  • MJF122G
    MJF122G
    ON Semiconductor
    ACTIVE (Last Updated: 2 days ago)
    8 Weeks
    Through Hole
    TO-220-3 Full Pack
    NO
    3
    2.299997g
    SILICON
    -65°C~150°C TJ
    Tube
    2004
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    UL RECOGNIZED
    Other Transistors
    100V
    30W
    260
    5A
    40
    3
    1
    NPN
    Single
    2W
    ISOLATED
    SWITCHING
    NPN - Darlington
    100V
    5A
    2000 @ 3A 3V
    10μA
    TO-220AB
    3.5V @ 20mA, 5A
    100V
    2V
    100V
    5V
    1000
    5A
    9.24mm
    10.63mm
    4.9mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MJF18008
    MJF18008
    ON Semiconductor
    LAST SHIPMENTS (Last Updated: 2 days ago)
    -
    Through Hole
    TO-220-3 Full Pack
    NO
    3
    -
    SILICON
    -65°C~150°C TJ
    Tube
    2006
    e0
    no
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Tin/Lead (Sn/Pb)
    UL RECOGNIZED
    Other Transistors
    450V
    45W
    240
    8A
    30
    3
    1
    -
    Single
    -
    ISOLATED
    SWITCHING
    NPN
    450V
    8A
    14 @ 1A 5V
    100μA
    TO-220AB
    700mV @ 900mA, 4.5V
    450V
    300mV
    1kV
    9V
    14
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    Contains Lead
    SWITCHMODE™
    not_compliant
    13MHz
    Not Qualified
    13MHz
    NPN
    13MHz
    -
    MJF122G vs MJF18008
  • MJF18004
    MJF18004
    ON Semiconductor
    LAST SHIPMENTS (Last Updated: 1 week ago)
    -
    Through Hole
    TO-220-3 Full Pack
    NO
    3
    -
    SILICON
    -65°C~150°C TJ
    Tube
    2006
    e0
    no
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Tin/Lead (Sn/Pb)
    UL RECOGNIZED
    Other Transistors
    450V
    35W
    240
    5A
    30
    3
    1
    -
    Single
    -
    ISOLATED
    SWITCHING
    NPN
    450V
    5A
    14 @ 300mA 5V
    100μA
    TO-220AB
    750mV @ 500mA, 2.5A
    450V
    920mV
    1kV
    9V
    12
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    Contains Lead
    SWITCHMODE™
    not_compliant
    13MHz
    Not Qualified
    13MHz
    NPN
    13MHz
    -
    MJF122G vs MJF18004
  • MJF122
    MJF122
    ON Semiconductor
    LAST SHIPMENTS (Last Updated: 2 days ago)
    -
    Through Hole
    TO-220-3 Full Pack
    NO
    3
    -
    SILICON
    -65°C~150°C TJ
    Tube
    2008
    e0
    no
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Tin/Lead (Sn/Pb)
    UL RECOGNIZED
    Other Transistors
    100V
    2W
    240
    5A
    30
    3
    1
    NPN
    Single
    30W
    ISOLATED
    SWITCHING
    NPN - Darlington
    3.5V
    5A
    2000 @ 3A 3V
    10μA
    TO-220AB
    3.5V @ 20mA, 5A
    100V
    -
    100V
    5V
    -
    5A
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    Contains Lead
    -
    not_compliant
    -
    Not Qualified
    -
    -
    4MHz
    8541.29.00.95
    MJF122G vs MJF122
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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