ON Semiconductor MJF18008

MJF18008 Overview
In this device, the DC current gain is 14 @ 1A 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 300mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 700mV @ 900mA, 4.5V.With the emitter base voltage set at 9V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 8A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 13MHz.Single BJT transistor is possible for the collector current to fall as low as 8A volts at Single BJT transistors maximum.

MJF18008 Features
the DC current gain for this device is 14 @ 1A 5V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 700mV @ 900mA, 4.5V
the emitter base voltage is kept at 9V
the current rating of this device is 8A
a transition frequency of 13MHz


MJF18008 Applications
There are a lot of ON Semiconductor
MJF18008 applications of single BJT transistors.


Inverter
Interface
Driver
Muting