ON Semiconductor MJF18008
- Part Number:
- MJF18008
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2846493-MJF18008
- Description:
- TRANS NPN 450V 8A TO220-3FP
- Datasheet:
- MJF18008
ON Semiconductor MJF18008 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJF18008.
- Lifecycle StatusLAST SHIPMENTS (Last Updated: 2 days ago)
- Mounting TypeThrough Hole
- Package / CaseTO-220-3 Full Pack
- Surface MountNO
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingTube
- SeriesSWITCHMODE™
- Published2006
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- Additional FeatureUL RECOGNIZED
- SubcategoryOther Transistors
- Voltage - Rated DC450V
- Max Power Dissipation45W
- Peak Reflow Temperature (Cel)240
- Reach Compliance Codenot_compliant
- Current Rating8A
- Frequency13MHz
- Time@Peak Reflow Temperature-Max (s)30
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- Element ConfigurationSingle
- Case ConnectionISOLATED
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product13MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)450V
- Max Collector Current8A
- DC Current Gain (hFE) (Min) @ Ic, Vce14 @ 1A 5V
- Current - Collector Cutoff (Max)100μA
- JEDEC-95 CodeTO-220AB
- Vce Saturation (Max) @ Ib, Ic700mV @ 900mA, 4.5V
- Collector Emitter Breakdown Voltage450V
- Transition Frequency13MHz
- Collector Emitter Saturation Voltage300mV
- Collector Base Voltage (VCBO)1kV
- Emitter Base Voltage (VEBO)9V
- hFE Min14
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
MJF18008 Overview
In this device, the DC current gain is 14 @ 1A 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 300mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 700mV @ 900mA, 4.5V.With the emitter base voltage set at 9V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 8A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 13MHz.Single BJT transistor is possible for the collector current to fall as low as 8A volts at Single BJT transistors maximum.
MJF18008 Features
the DC current gain for this device is 14 @ 1A 5V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 700mV @ 900mA, 4.5V
the emitter base voltage is kept at 9V
the current rating of this device is 8A
a transition frequency of 13MHz
MJF18008 Applications
There are a lot of ON Semiconductor
MJF18008 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 14 @ 1A 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 300mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 700mV @ 900mA, 4.5V.With the emitter base voltage set at 9V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 8A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 13MHz.Single BJT transistor is possible for the collector current to fall as low as 8A volts at Single BJT transistors maximum.
MJF18008 Features
the DC current gain for this device is 14 @ 1A 5V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 700mV @ 900mA, 4.5V
the emitter base voltage is kept at 9V
the current rating of this device is 8A
a transition frequency of 13MHz
MJF18008 Applications
There are a lot of ON Semiconductor
MJF18008 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MJF18008 More Descriptions
8.0 A, 450 V NPN Bipolar Power Transistor
Power Bipolar Transistor, 8A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
TRANS NPN 450V 8A TO220-3FP
BIP T0220FP NPN 10A 450V
RES SMD 82 OHM 1% 1/2W 1206
OEMs, CMs ONLY (NO BROKERS)
Power Bipolar Transistor, 8A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
TRANS NPN 450V 8A TO220-3FP
BIP T0220FP NPN 10A 450V
RES SMD 82 OHM 1% 1/2W 1206
OEMs, CMs ONLY (NO BROKERS)
The three parts on the right have similar specifications to MJF18008.
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ImagePart NumberManufacturerLifecycle StatusMounting TypePackage / CaseSurface MountNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryVoltage - Rated DCMax Power DissipationPeak Reflow Temperature (Cel)Reach Compliance CodeCurrent RatingFrequencyTime@Peak Reflow Temperature-Max (s)Pin CountQualification StatusNumber of ElementsElement ConfigurationCase ConnectionTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)JEDEC-95 CodeVce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinRoHS StatusLead FreeTerminal PositionJESD-30 CodeConfigurationPower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionHTS CodePolarityPower DissipationContinuous Collector CurrentFactory Lead TimeWeightHeightLengthWidthREACH SVHCRadiation HardeningView Compare
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MJF18008LAST SHIPMENTS (Last Updated: 2 days ago)Through HoleTO-220-3 Full PackNO3SILICON-65°C~150°C TJTubeSWITCHMODE™2006e0noObsolete1 (Unlimited)3EAR99Tin/Lead (Sn/Pb)UL RECOGNIZEDOther Transistors450V45W240not_compliant8A13MHz303Not Qualified1SingleISOLATEDSWITCHING13MHzNPNNPN450V8A14 @ 1A 5V100μATO-220AB700mV @ 900mA, 4.5V450V13MHz300mV1kV9V14Non-RoHS CompliantContains Lead-------------------
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-Through HoleTO-220-3 Full PackNO-SILICON-65°C~150°C TJTube--e0yesObsolete1 (Unlimited)3-TIN LEADUL RECOGNIZED---240---303COMMERCIAL1-ISOLATEDSWITCHING-NPNNPN--20 @ 4A 2V10μATO-220AB500mV @ 100mA, 1A-30MHz----Non-RoHS Compliant-SINGLER-PSFM-T3SINGLE2W150V8A30MHz-----------
-
LAST SHIPMENTS (Last Updated: 2 days ago)Through HoleTO-220-3 Full PackNO3SILICON-65°C~150°C TJTube-2008e0noObsolete1 (Unlimited)3EAR99Tin/Lead (Sn/Pb)UL RECOGNIZEDOther Transistors100V2W240not_compliant5A-303Not Qualified1SingleISOLATEDSWITCHING--NPN - Darlington3.5V5A2000 @ 3A 3V10μATO-220AB3.5V @ 20mA, 5A100V4MHz-100V5V-Non-RoHS CompliantContains Lead-------8541.29.00.95NPN30W5A-------
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ACTIVE (Last Updated: 2 days ago)Through HoleTO-220-3 Full PackNO3SILICON-65°C~150°C TJTube-2000e3yesActive1 (Unlimited)3EAR99Tin (Sn)UL RECOGNIZEDOther Transistors150V2W260-8A30MHz403-1SingleISOLATEDSWITCHING30MHzNPNNPN150V8A20 @ 4A 2V10μA-500mV @ 100mA, 1A150V30MHz500mV150V5V20ROHS3 CompliantLead Free---------2W-8 Weeks4.535924g9.24mm10.63mm4.9mmNo SVHCNo
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