ON Semiconductor MJF18004
- Part Number:
- MJF18004
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2466900-MJF18004
- Description:
- TRANS NPN 450V 5A TO220FP
- Datasheet:
- MJF18004
ON Semiconductor MJF18004 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJF18004.
- Lifecycle StatusLAST SHIPMENTS (Last Updated: 1 week ago)
- Mounting TypeThrough Hole
- Package / CaseTO-220-3 Full Pack
- Surface MountNO
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingTube
- SeriesSWITCHMODE™
- Published2006
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- Additional FeatureUL RECOGNIZED
- SubcategoryOther Transistors
- Voltage - Rated DC450V
- Max Power Dissipation35W
- Peak Reflow Temperature (Cel)240
- Reach Compliance Codenot_compliant
- Current Rating5A
- Frequency13MHz
- Time@Peak Reflow Temperature-Max (s)30
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- Element ConfigurationSingle
- Case ConnectionISOLATED
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product13MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)450V
- Max Collector Current5A
- DC Current Gain (hFE) (Min) @ Ic, Vce14 @ 300mA 5V
- Current - Collector Cutoff (Max)100μA
- JEDEC-95 CodeTO-220AB
- Vce Saturation (Max) @ Ib, Ic750mV @ 500mA, 2.5A
- Collector Emitter Breakdown Voltage450V
- Transition Frequency13MHz
- Collector Emitter Saturation Voltage920mV
- Collector Base Voltage (VCBO)1kV
- Emitter Base Voltage (VEBO)9V
- hFE Min12
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
MJF18004 Overview
This device has a DC current gain of 14 @ 300mA 5V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 920mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 9V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 5A.In this part, there is a transition frequency of 13MHz.The maximum collector current is 5A volts.
MJF18004 Features
the DC current gain for this device is 14 @ 300mA 5V
a collector emitter saturation voltage of 920mV
the vce saturation(Max) is 750mV @ 500mA, 2.5A
the emitter base voltage is kept at 9V
the current rating of this device is 5A
a transition frequency of 13MHz
MJF18004 Applications
There are a lot of ON Semiconductor
MJF18004 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 14 @ 300mA 5V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 920mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 9V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 5A.In this part, there is a transition frequency of 13MHz.The maximum collector current is 5A volts.
MJF18004 Features
the DC current gain for this device is 14 @ 300mA 5V
a collector emitter saturation voltage of 920mV
the vce saturation(Max) is 750mV @ 500mA, 2.5A
the emitter base voltage is kept at 9V
the current rating of this device is 5A
a transition frequency of 13MHz
MJF18004 Applications
There are a lot of ON Semiconductor
MJF18004 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MJF18004 More Descriptions
5.0 A, 450 V NPN Bipolar Power Transistor
Power Bipolar Transistor, 5A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
TRANSISTOR, NPN ISOWATT-220; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 450V; Transition Frequency ft: 13MHz; Transistor Case Style: ISOWATT-220; No. of Pins: 3Pins; MSL: -; SVHC: No SVHC (15-Jan-2018); Colle
Power Bipolar Transistor, 5A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
TRANSISTOR, NPN ISOWATT-220; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 450V; Transition Frequency ft: 13MHz; Transistor Case Style: ISOWATT-220; No. of Pins: 3Pins; MSL: -; SVHC: No SVHC (15-Jan-2018); Colle
The three parts on the right have similar specifications to MJF18004.
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ImagePart NumberManufacturerLifecycle StatusMounting TypePackage / CaseSurface MountNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryVoltage - Rated DCMax Power DissipationPeak Reflow Temperature (Cel)Reach Compliance CodeCurrent RatingFrequencyTime@Peak Reflow Temperature-Max (s)Pin CountQualification StatusNumber of ElementsElement ConfigurationCase ConnectionTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)JEDEC-95 CodeVce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinRoHS StatusLead FreeFactory Lead TimeWeightPolarityPower DissipationContinuous Collector CurrentHeightLengthWidthREACH SVHCRadiation HardeningContact PlatingPower - MaxHTS CodeView Compare
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MJF18004LAST SHIPMENTS (Last Updated: 1 week ago)Through HoleTO-220-3 Full PackNO3SILICON-65°C~150°C TJTubeSWITCHMODE™2006e0noObsolete1 (Unlimited)3EAR99Tin/Lead (Sn/Pb)UL RECOGNIZEDOther Transistors450V35W240not_compliant5A13MHz303Not Qualified1SingleISOLATEDSWITCHING13MHzNPNNPN450V5A14 @ 300mA 5V100μATO-220AB750mV @ 500mA, 2.5A450V13MHz920mV1kV9V12Non-RoHS CompliantContains Lead--------------
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ACTIVE (Last Updated: 2 days ago)Through HoleTO-220-3 Full PackNO3SILICON-65°C~150°C TJTube-2004e3yesActive1 (Unlimited)3EAR99Tin (Sn)UL RECOGNIZEDOther Transistors100V30W260-5A-403-1SingleISOLATEDSWITCHING--NPN - Darlington100V5A2000 @ 3A 3V10μATO-220AB3.5V @ 20mA, 5A100V-2V100V5V1000ROHS3 CompliantLead Free8 Weeks2.299997gNPN2W5A9.24mm10.63mm4.9mmNo SVHCNo---
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ACTIVE (Last Updated: 2 days ago)Through HoleTO-220-3 Full PackNO3SILICON-65°C~150°C TJTubeSWITCHMODE™2006e3yesActive1 (Unlimited)3EAR99-UL RECOGNIZEDOther Transistors450V125W260-8A13MHz403-1SingleISOLATEDSWITCHING13MHzNPNNPN450V8A14 @ 1A 5V100μATO-220AB700mV @ 900mA, 4.5V450V13MHz300mV1kV9V14ROHS3 CompliantLead Free2 Weeks----16.12mm10.63mm4.9mm-NoTin45W-
-
LAST SHIPMENTS (Last Updated: 2 days ago)Through HoleTO-220-3 Full PackNO3SILICON-65°C~150°C TJTube-2008e0noObsolete1 (Unlimited)3EAR99Tin/Lead (Sn/Pb)UL RECOGNIZEDOther Transistors100V2W240not_compliant5A-303Not Qualified1SingleISOLATEDSWITCHING--NPN - Darlington3.5V5A2000 @ 3A 3V10μATO-220AB3.5V @ 20mA, 5A100V4MHz-100V5V-Non-RoHS CompliantContains Lead--NPN30W5A-------8541.29.00.95
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