ON Semiconductor MJF18004G

Name: MJF18004G
Brand: ON Semiconductor
SKU: 2465229-MJF18004G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: MJF18004G

Manufacturer:: ON Semiconductor

Ventron No:: 2465229-MJF18004G

Description:: TRANS NPN 450V 5A TO220FP

ECAD Model:

Datasheet:: MJF18004G

Specifications

ON Semiconductor MJF18004G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJF18004G.

Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Factory Lead Time
2 Weeks
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Surface Mount
NO
Number of Pins
3
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Series
SWITCHMODE™
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Additional Feature
UL RECOGNIZED
Subcategory
Other Transistors
Voltage - Rated DC
450V
Max Power Dissipation
35W
Peak Reflow Temperature (Cel)
260
Current Rating
5A
Frequency
13MHz
Time@Peak Reflow Temperature-Max (s)
40
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
280mW
Case Connection
ISOLATED
Transistor Application
SWITCHING
Gain Bandwidth Product
13MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
450V
Max Collector Current
5A
DC Current Gain (hFE) (Min) @ Ic, Vce
14 @ 300mA 5V
Current - Collector Cutoff (Max)
100μA
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
750mV @ 500mA, 2.5A
Collector Emitter Breakdown Voltage
450V
Transition Frequency
13MHz
Collector Emitter Saturation Voltage
920mV
Collector Base Voltage (VCBO)
1kV
Emitter Base Voltage (VEBO)
9V
hFE Min
12
Isolation Voltage
2kV
Height
9.24mm
Length
10.63mm
Width
4.9mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

MJF18004G Overview
DC current gain in this device equals 14 @ 300mA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 920mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 750mV @ 500mA, 2.5A.An emitter's base voltage can be kept at 9V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 5A current rating.As a result, the part has a transition frequency of 13MHz.In extreme cases, the collector current can be as low as 5A volts.

MJF18004G Features
the DC current gain for this device is 14 @ 300mA 5V
a collector emitter saturation voltage of 920mV
the vce saturation(Max) is 750mV @ 500mA, 2.5A
the emitter base voltage is kept at 9V
the current rating of this device is 5A
a transition frequency of 13MHz

MJF18004G Applications
There are a lot of ON Semiconductor
MJF18004G applications of single BJT transistors.

Inverter
Interface
Driver
Muting

MJF18004G More Descriptions

ON Semi MJF18004G NPN High Voltage Bipolar Transistor; 5 A; 450 V; 3-Pin TO-220
MJE Series 450 V 5 A SWITCHMODE NPN Power Transistor - TO-220FP
5.0 A, 450 V NPN Bipolar Power Transistor
Trans GP BJT NPN 450V 5A 3-Pin(3 Tab) TO-220 Full-Pak Rail - Rail/Tube
Power Bipolar Transistor, 5A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Transistor, Npn, Isowatt-220; Transistor Polarity:Npn; Collector Emitter Voltage V(Br)Ceo:450V; Transition Frequency Ft:13Mhz; Power Dissipation Pd:280Mw; Dc Collector Current:5A; Dc Current Gain Hfe:32Hfe; Transistor Case Rohs Compliant: Yes |Onsemi MJF18004G
NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF18004 have an applications specific state-of-the-art die designed for use in 220 V line operated Switchmode Power supplies and electronic light ballasts. This high voltage/high speed transistors offer the following:

Product Comparison

The three parts on the right have similar specifications to MJF18004G.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mounting Type

Package / Case

Surface Mount

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Subcategory

Voltage - Rated DC

Max Power Dissipation

Peak Reflow Temperature (Cel)

Current Rating

Frequency

Time@Peak Reflow Temperature-Max (s)

Pin Count

Number of Elements

Element Configuration

Power Dissipation

Case Connection

Transistor Application

Gain Bandwidth Product

Polarity/Channel Type

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

JEDEC-95 Code

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Transition Frequency

Collector Emitter Saturation Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

Isolation Voltage

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Contact Plating

Power - Max

Terminal Position

JESD-30 Code

Qualification Status

Configuration

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

Frequency - Transition

Reach Compliance Code

View Compare
MJF18004G

ON Semiconductor

ACTIVE (Last Updated: 2 days ago)

2 Weeks

Through Hole

TO-220-3 Full Pack

NO

3

4.535924g

SILICON

-65°C~150°C TJ

Tube

SWITCHMODE™

2006

e3

yes

Active

1 (Unlimited)

3

EAR99

Tin (Sn)

UL RECOGNIZED

Other Transistors

450V

35W

260

5A

13MHz

40

3

1

Single

280mW

ISOLATED

SWITCHING

13MHz

NPN

NPN

450V

5A

14 @ 300mA 5V

100μA

TO-220AB

750mV @ 500mA, 2.5A

450V

13MHz

920mV

1kV

9V

12

2kV

9.24mm

10.63mm

4.9mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-
MJF18008G

ON Semiconductor

ACTIVE (Last Updated: 2 days ago)

2 Weeks

Through Hole

TO-220-3 Full Pack

NO

3

-

SILICON

-65°C~150°C TJ

Tube

SWITCHMODE™

2006

e3

yes

Active

1 (Unlimited)

3

EAR99

-

UL RECOGNIZED

Other Transistors

450V

125W

260

8A

13MHz

40

3

1

Single

-

ISOLATED

SWITCHING

13MHz

NPN

NPN

450V

8A

14 @ 1A 5V

100μA

TO-220AB

700mV @ 900mA, 4.5V

450V

13MHz

300mV

1kV

9V

14

-

16.12mm

10.63mm

4.9mm

-

No

ROHS3 Compliant

Lead Free

Tin

45W

-

-

-

-

-

-

-

-

MJF18004G vs MJF18008G
MJF15030

ON Semiconductor

-

-

Through Hole

TO-220-3 Full Pack

NO

-

-

SILICON

-65°C~150°C TJ

Tube

-

-

e0

yes

Obsolete

1 (Unlimited)

3

-

TIN LEAD

UL RECOGNIZED

-

-

-

240

-

-

30

3

1

-

-

ISOLATED

SWITCHING

-

NPN

NPN

-

-

20 @ 4A 2V

10μA

TO-220AB

500mV @ 100mA, 1A

-

30MHz

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

-

2W

SINGLE

R-PSFM-T3

COMMERCIAL

SINGLE

150V

8A

30MHz

-

MJF18004G vs MJF15030
MJF18004

ON Semiconductor

LAST SHIPMENTS (Last Updated: 1 week ago)

-

Through Hole

TO-220-3 Full Pack

NO

3

-

SILICON

-65°C~150°C TJ

Tube

SWITCHMODE™

2006

e0

no

Obsolete

1 (Unlimited)

3

EAR99

Tin/Lead (Sn/Pb)

UL RECOGNIZED

Other Transistors

450V

35W

240

5A

13MHz

30

3

1

Single

-

ISOLATED

SWITCHING

13MHz

NPN

NPN

450V

5A

14 @ 300mA 5V

100μA

TO-220AB

750mV @ 500mA, 2.5A

450V

13MHz

920mV

1kV

9V

12

-

-

-

-

-

-

Non-RoHS Compliant

Contains Lead

-

-

-

-

Not Qualified

-

-

-

-

not_compliant

MJF18004G vs MJF18004