ON Semiconductor MJF15030
- Part Number:
- MJF15030
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2466901-MJF15030
- Description:
- TRANS NPN 150V 8A TO220FP
- Datasheet:
- MJF15030
ON Semiconductor MJF15030 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJF15030.
- Mounting TypeThrough Hole
- Package / CaseTO-220-3 Full Pack
- Surface MountNO
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingTube
- JESD-609 Codee0
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishTIN LEAD
- Additional FeatureUL RECOGNIZED
- Terminal PositionSINGLE
- Peak Reflow Temperature (Cel)240
- Time@Peak Reflow Temperature-Max (s)30
- Pin Count3
- JESD-30 CodeR-PSFM-T3
- Qualification StatusCOMMERCIAL
- Number of Elements1
- ConfigurationSINGLE
- Case ConnectionISOLATED
- Power - Max2W
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 4A 2V
- Current - Collector Cutoff (Max)10μA
- JEDEC-95 CodeTO-220AB
- Vce Saturation (Max) @ Ib, Ic500mV @ 100mA, 1A
- Voltage - Collector Emitter Breakdown (Max)150V
- Current - Collector (Ic) (Max)8A
- Transition Frequency30MHz
- Frequency - Transition30MHz
- RoHS StatusNon-RoHS Compliant
MJF15030 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 20 @ 4A 2V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 100mA, 1A.A transition frequency of 30MHz is present in the part.A 150V maximal voltage - Collector Emitter Breakdown is present in the device.
MJF15030 Features
the DC current gain for this device is 20 @ 4A 2V
the vce saturation(Max) is 500mV @ 100mA, 1A
a transition frequency of 30MHz
MJF15030 Applications
There are a lot of Rochester Electronics, LLC
MJF15030 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 20 @ 4A 2V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 100mA, 1A.A transition frequency of 30MHz is present in the part.A 150V maximal voltage - Collector Emitter Breakdown is present in the device.
MJF15030 Features
the DC current gain for this device is 20 @ 4A 2V
the vce saturation(Max) is 500mV @ 100mA, 1A
a transition frequency of 30MHz
MJF15030 Applications
There are a lot of Rochester Electronics, LLC
MJF15030 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MJF15030 More Descriptions
Tube Through Hole NPN Single Bipolar (BJT) Transistor 20 @ 4A 2V 10muA 2W 30MHz
8.0 A, 150 V NPN Bipolar Power Transistor
Trans GP BJT NPN 150V 8A 3-Pin (3 Tab) TO-220 Full-Pak Rail
Power Bipolar Transistor, 8A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
8.0 A, 150 V NPN Bipolar Power Transistor
Trans GP BJT NPN 150V 8A 3-Pin (3 Tab) TO-220 Full-Pak Rail
Power Bipolar Transistor, 8A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
The three parts on the right have similar specifications to MJF15030.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishAdditional FeatureTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationCase ConnectionPower - MaxTransistor ApplicationPolarity/Channel TypeTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)JEDEC-95 CodeVce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Transition FrequencyFrequency - TransitionRoHS StatusLifecycle StatusFactory Lead TimeContact PlatingNumber of PinsSeriesPublishedECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationCurrent RatingFrequencyElement ConfigurationGain Bandwidth ProductCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthRadiation HardeningLead FreeReach Compliance CodeWeightPower DissipationREACH SVHCView Compare
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MJF15030Through HoleTO-220-3 Full PackNOSILICON-65°C~150°C TJTubee0yesObsolete1 (Unlimited)3TIN LEADUL RECOGNIZEDSINGLE240303R-PSFM-T3COMMERCIAL1SINGLEISOLATED2WSWITCHINGNPNNPN20 @ 4A 2V10μATO-220AB500mV @ 100mA, 1A150V8A30MHz30MHzNon-RoHS Compliant-------------------------------
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Through HoleTO-220-3 Full PackNOSILICON-65°C~150°C TJTubee3yesActive1 (Unlimited)3-UL RECOGNIZED-260403--1-ISOLATED45WSWITCHINGNPNNPN14 @ 1A 5V100μATO-220AB700mV @ 900mA, 4.5V--13MHz-ROHS3 CompliantACTIVE (Last Updated: 2 days ago)2 WeeksTin3SWITCHMODE™2006EAR99Other Transistors450V125W8A13MHzSingle13MHz450V8A450V300mV1kV9V1416.12mm10.63mm4.9mmNoLead Free----
-
Through HoleTO-220-3 Full PackNOSILICON-65°C~150°C TJTubee0noObsolete1 (Unlimited)3Tin/Lead (Sn/Pb)UL RECOGNIZED-240303-Not Qualified1-ISOLATED-SWITCHINGNPNNPN14 @ 300mA 5V100μATO-220AB750mV @ 500mA, 2.5A--13MHz-Non-RoHS CompliantLAST SHIPMENTS (Last Updated: 1 week ago)--3SWITCHMODE™2006EAR99Other Transistors450V35W5A13MHzSingle13MHz450V5A450V920mV1kV9V12----Contains Leadnot_compliant---
-
Through HoleTO-220-3 Full PackNOSILICON-65°C~150°C TJTubee3yesActive1 (Unlimited)3Tin (Sn)UL RECOGNIZED-260403--1-ISOLATED-SWITCHINGNPNNPN20 @ 4A 2V10μA-500mV @ 100mA, 1A--30MHz-ROHS3 CompliantACTIVE (Last Updated: 2 days ago)8 Weeks-3-2000EAR99Other Transistors150V2W8A30MHzSingle30MHz150V8A150V500mV150V5V209.24mm10.63mm4.9mmNoLead Free-4.535924g2WNo SVHC
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