Infineon Technologies IRLML6401TRPBF

Name: IRLML6401TRPBF
Brand: Infineon Technologies
SKU: 2848729-IRLML6401TRPBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRLML6401TRPBF

Manufacturer:: Infineon Technologies

Ventron No:: 2848729-IRLML6401TRPBF

Description:: MOSFET P-CH 12V 4.3A SOT-23

ECAD Model:

Datasheet:: IRLML6401TRPBF

Part Pictures

Specifications

Infineon Technologies IRLML6401TRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRLML6401TRPBF.

Package / Case
SOT23-3
Packaging
Tape & Reel (TR)
RoHS Status
RoHS Compliant

Description

IRLML6401TRPBF Overview
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - FETs, MOSFETs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IRLML6401TRPBF or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IRLML6401TRPBF. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

IRLML6401TRPBF More Descriptions

MOSFET, Power;P-Ch;VDSS -12V;RDS(ON) 0.05Ohm;ID -4.3A;Micro3;PD 1.3W;VGS /-8V
-12V Single P-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHSInfineon SCT
Trans MOSFET P-CH Si 12V 4.3A 3-Pin SOT-23 T/R / HEXFET Power MOSFET
Power Field-Effect Transistor, 4.3A I(D), 12V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO-3
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; Low Profile (less than 1.1mm); P-Channel MOSFET; SOT-23 Footprint | Target Applications: DC Switches; Load Switch
MOSFET, P CHANNEL, -12V, -4.3A, SOT-23-3, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:12V; Continuous Drain Current Id:4.3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Power Dissipation:1.3W RoHS Compliant: Yes
MOSFET, P REEL 3K; Transistor Type:MOSFET; Transistor Polarity:P; Voltage, Vds Typ:-12V; Current, Id Cont:4.3A; Resistance, Rds On:0.05ohm; Voltage, Vgs Rds on Measurement:-4.5V; Voltage, Vgs th Typ:-0.55V; Case Style:SOT-23; Termination Type:SMD; Current, Idm Pulse:34A; Power Dissipation:1.3W; Power, Pd:1.3W; Quantity, Reel:3000; Resistance, Rds on @ Vgs = 10V:0.05ohm; Thermal Resistance, Junction to Case A:100°C/W; Voltage, Vds Max:12V; Voltage, Vgs th Min:-0.4V; Width, Tape:8mm
MOSFET, P, MICRO3; Transistor Polarity:P Channel; Continuous Drain Current Id:-4.3A; Drain Source Voltage Vds:-12V; On Resistance Rds(on):50mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-550mV; Power Dissipation Pd:1.3W; Transistor Case Style:µSOIC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:-4.3A; Package / Case:Micro3; Power Dissipation Pd:1.3W; Termination Type:SMD; Voltage Vds Typ:-12V; Voltage Vgs Max:-550mV; Voltage Vgs Rds on Measurement:-4.5V

Product Comparison

The three parts on the right have similar specifications to IRLML6401TRPBF.

Image

Part Number

Manufacturer

Package / Case

Packaging

RoHS Status

Factory Lead Time

Contact Plating

Mount

Mounting Type

Number of Pins

Transistor Element Material

Operating Temperature

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Termination

ECCN Code

Resistance

Subcategory

Voltage - Rated DC

Technology

Terminal Position

Terminal Form

Current Rating

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Dual Supply Voltage

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

Lead Free

Terminal Finish

Additional Feature

Surface Mount

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Operating Temperature (Max)

Configuration

JEDEC-95 Code

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

Power Dissipation-Max (Abs)

View Compare
IRLML6401TRPBF

Infineon Technologies

SOT23-3

Tape & Reel (TR)

RoHS Compliant

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IRLML5203TRPBF

Infineon Technologies

TO-236-3, SC-59, SOT-23-3

Tape & Reel (TR)

ROHS3 Compliant

12 Weeks

Tin

Surface Mount

Surface Mount

3

SILICON

-55°C~150°C TJ

HEXFET®

2003

e3

Active

1 (Unlimited)

3

SMD/SMT

EAR99

98MOhm

Other Transistors

-30V

MOSFET (Metal Oxide)

DUAL

GULL WING

-3A

1

1.25W Ta

Single

ENHANCEMENT MODE

1.25W

12 ns

P-Channel

SWITCHING

98m Ω @ 3A, 10V

2.5V @ 250μA

510pF @ 25V

3A Ta

14nC @ 10V

18ns

30V

4.5V 10V

±20V

52 ns

88 ns

-3A

-2.5V

20V

3A

-30V

24A

-30V

-2.5 V

1.016mm

3.0226mm

3.05mm

No SVHC

No

Contains Lead

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRLML6401TRPBF vs IRLML5203TRPBF
IRLMS5703TRPBF

Infineon Technologies

SOT-23-6

Tape & Reel (TR)

ROHS3 Compliant

7 Weeks

-

Surface Mount

Surface Mount

6

SILICON

-55°C~150°C TJ

HEXFET®

1997

e3

Not For New Designs

1 (Unlimited)

6

SMD/SMT

EAR99

180mOhm

-

-30V

MOSFET (Metal Oxide)

DUAL

GULL WING

-2.3A

1

1.7W Ta

Single

ENHANCEMENT MODE

1.7W

10 ns

P-Channel

SWITCHING

180m Ω @ 1.6A, 10V

1V @ 250μA

170pF @ 25V

2.4A Ta

11nC @ 10V

12ns

30V

4.5V 10V

±20V

8.4 ns

20 ns

-2.3A

-1V

20V

2.4A

-30V

-

-30V

-1 V

1.4478mm

2.9972mm

1.75mm

No SVHC

No

Lead Free

Matte Tin (Sn)

ULTRA LOW RESISTANCE

-

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-

-

-

-

-

-

-

-

-

-

IRLML6401TRPBF vs IRLMS5703TRPBF
IRLML6402TR

Infineon Technologies

TO-236-3, SC-59, SOT-23-3

Cut Tape (CT)

Non-RoHS Compliant

-

-

-

Surface Mount

-

SILICON

-

HEXFET®

2003

e3

Obsolete

1 (Unlimited)

3

-

EAR99

-

Other Transistors

-

MOSFET (Metal Oxide)

DUAL

GULL WING

-

1

-

-

ENHANCEMENT MODE

-

-

P-Channel

SWITCHING

65m Ω @ 3.7A, 4.5V

1.2V @ 250μA

633pF @ 10V

3.7A Ta

12nC @ 5V

-

20V

-

-

-

-

-

-

-

3.7A

-

22A

-

-

-

-

-

-

-

-

Matte Tin (Sn)

HIGH RELIABILITY

YES

260

30

R-PDSO-G3

Not Qualified

150°C

SINGLE WITH BUILT-IN DIODE

TO-236AB

0.065Ohm

20V

11 mJ

1.3W

IRLML6401TRPBF vs IRLML6402TR