Infineon Technologies IRLML6401TR
- Part Number:
- IRLML6401TR
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3071566-IRLML6401TR
- Description:
- MOSFET P-CH 12V 4.3A SOT-23
- ECAD Model:
-
- Datasheet:
- IRLML6401TR
Infineon Technologies IRLML6401TR technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRLML6401TR.
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Surface MountYES
- Transistor Element MaterialSILICON
- PackagingCut Tape (CT)
- SeriesHEXFET®
- Published2003
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- Additional FeatureHIGH RELIABILITY
- SubcategoryOther Transistors
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
- JESD-30 CodeR-PDSO-G3
- Qualification StatusNot Qualified
- Operating Temperature (Max)150°C
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Operating ModeENHANCEMENT MODE
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs50m Ω @ 4.3A, 4.5V
- Vgs(th) (Max) @ Id950mV @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds830pF @ 10V
- Current - Continuous Drain (Id) @ 25°C4.3A Ta
- Gate Charge (Qg) (Max) @ Vgs15nC @ 5V
- Drain to Source Voltage (Vdss)12V
- JEDEC-95 CodeTO-236AB
- Drain Current-Max (Abs) (ID)4.3A
- Drain-source On Resistance-Max0.05Ohm
- Pulsed Drain Current-Max (IDM)34A
- DS Breakdown Voltage-Min12V
- Avalanche Energy Rating (Eas)33 mJ
- Power Dissipation-Max (Abs)1.3W
- RoHS StatusNon-RoHS Compliant
IRLML6401TR Description
IRLML6401TR is a -12V Single P-Channel Power MOSFET in a Micro 3 package. The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery-powered applications. The Operating and Storage Temperature Range is between -55 and 150℃. And the MOSFET IRLML6401TR is in the SOT-23-3 package with 1.3w power dissipation.
IRLML6401TR Features
Halogen-free
MSL1, Industrial qualification
Multi-vendor compatibility
Environmentally-friendly
Trench MOSFET technology
±8V Gate to source voltage
0.01W/°C Linear derating factor
IRLML6401TR Applications
DC Switches
Load Switch
DC motors
Inverters
SMPS
Lighting
IRLML6401TR is a -12V Single P-Channel Power MOSFET in a Micro 3 package. The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery-powered applications. The Operating and Storage Temperature Range is between -55 and 150℃. And the MOSFET IRLML6401TR is in the SOT-23-3 package with 1.3w power dissipation.
IRLML6401TR Features
Halogen-free
MSL1, Industrial qualification
Multi-vendor compatibility
Environmentally-friendly
Trench MOSFET technology
±8V Gate to source voltage
0.01W/°C Linear derating factor
IRLML6401TR Applications
DC Switches
Load Switch
DC motors
Inverters
SMPS
Lighting
IRLML6401TR More Descriptions
MOSFET, P-CHANNEL, -12V, -4.3A, 50 mOhm, 10 nC Qg, Logic Level, SOT-23
-12V Single P-Channel HEXFET Power MOSFET in a Micro 3 package
Trans MOSFET P-CH Si 12V 4.3A 3-Pin SOT-23 T/R
Power Field-Effect Transistor, 4.3A I(D), 12V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO-3
-12V Single P-Channel HEXFET Power MOSFET in a Micro 3 package
Trans MOSFET P-CH Si 12V 4.3A 3-Pin SOT-23 T/R
Power Field-Effect Transistor, 4.3A I(D), 12V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO-3
The three parts on the right have similar specifications to IRLML6401TR.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialPackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusOperating Temperature (Max)Number of ElementsConfigurationOperating ModeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)JEDEC-95 CodeDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)Power Dissipation-Max (Abs)RoHS StatusFactory Lead TimeContact PlatingMountNumber of PinsOperating TemperatureTerminationResistanceVoltage - Rated DCCurrent RatingPower Dissipation-MaxElement ConfigurationPower DissipationTurn On Delay TimeRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageDual Supply VoltageNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningLead FreeView Compare
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IRLML6401TRSurface MountTO-236-3, SC-59, SOT-23-3YESSILICONCut Tape (CT)HEXFET®2003e3Obsolete1 (Unlimited)3EAR99Matte Tin (Sn)HIGH RELIABILITYOther TransistorsMOSFET (Metal Oxide)DUALGULL WING26030R-PDSO-G3Not Qualified150°C1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEP-ChannelSWITCHING50m Ω @ 4.3A, 4.5V950mV @ 250μA830pF @ 10V4.3A Ta15nC @ 5V12VTO-236AB4.3A0.05Ohm34A12V33 mJ1.3WNon-RoHS Compliant------------------------------- -
Surface MountTO-236-3, SC-59, SOT-23-3-SILICONTape & Reel (TR)HEXFET®2003e3Active1 (Unlimited)3EAR99--Other TransistorsMOSFET (Metal Oxide)DUALGULL WING-----1-ENHANCEMENT MODEP-ChannelSWITCHING98m Ω @ 3A, 10V2.5V @ 250μA510pF @ 25V3A Ta14nC @ 10V30V-3A-24A---ROHS3 Compliant12 WeeksTinSurface Mount3-55°C~150°C TJSMD/SMT98MOhm-30V-3A1.25W TaSingle1.25W12 ns18ns4.5V 10V±20V52 ns88 ns-3A-2.5V20V-30V-30V-2.5 V1.016mm3.0226mm3.05mmNo SVHCNoContains Lead
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Surface MountSOT-23-6-SILICONTape & Reel (TR)HEXFET®1997e3Not For New Designs1 (Unlimited)6EAR99Matte Tin (Sn)ULTRA LOW RESISTANCE-MOSFET (Metal Oxide)DUALGULL WING-----1-ENHANCEMENT MODEP-ChannelSWITCHING180m Ω @ 1.6A, 10V1V @ 250μA170pF @ 25V2.4A Ta11nC @ 10V30V-2.4A-----ROHS3 Compliant7 Weeks-Surface Mount6-55°C~150°C TJSMD/SMT180mOhm-30V-2.3A1.7W TaSingle1.7W10 ns12ns4.5V 10V±20V8.4 ns20 ns-2.3A-1V20V-30V-30V-1 V1.4478mm2.9972mm1.75mmNo SVHCNoLead Free
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Surface MountTO-236-3, SC-59, SOT-23-3YESSILICONTubeHEXFET®2003e3Obsolete1 (Unlimited)3EAR99Matte Tin (Sn)-Other TransistorsMOSFET (Metal Oxide)DUALGULL WINGNOT SPECIFIEDNOT SPECIFIEDR-PDSO-G3Not Qualified150°C1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEP-ChannelSWITCHING98m Ω @ 3A, 10V2.5V @ 250μA510pF @ 25V3A Ta14nC @ 10V30V-3A0.098Ohm24A30V--Non-RoHS Compliant---------1.25W Ta----4.5V 10V±20V--------------
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