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IRLML6344TRPBF

Infineon Technologies IRLML6344TRPBF

Part Number:
IRLML6344TRPBF
Manufacturer:
Infineon Technologies
Ventron No:
2848937-IRLML6344TRPBF
Description:
MOSFET N-CH 30V 5A SOT23
ECAD Model:
Datasheet:
IRLML6344TRPBF

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Specifications
Infineon Technologies IRLML6344TRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRLML6344TRPBF.
  • Factory Lead Time
    12 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    HEXFET®
  • Published
    2010
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Resistance
    37MOhm
  • Terminal Finish
    Matte Tin (Sn)
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    1.3W Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    1.3W
  • Turn On Delay Time
    4.2 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    29m Ω @ 5A, 4.5V
  • Vgs(th) (Max) @ Id
    1.1V @ 10μA
  • Input Capacitance (Ciss) (Max) @ Vds
    650pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    5A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    6.8nC @ 4.5V
  • Rise Time
    5.6ns
  • Drive Voltage (Max Rds On,Min Rds On)
    2.5V 4.5V
  • Vgs (Max)
    ±12V
  • Fall Time (Typ)
    9.1 ns
  • Turn-Off Delay Time
    22 ns
  • Continuous Drain Current (ID)
    5A
  • Threshold Voltage
    800mV
  • Gate to Source Voltage (Vgs)
    12V
  • Drain Current-Max (Abs) (ID)
    5A
  • Drain to Source Breakdown Voltage
    30V
  • Recovery Time
    15 ns
  • Max Junction Temperature (Tj)
    150°C
  • Nominal Vgs
    800 mV
  • Height
    1.12mm
  • Length
    3.04mm
  • Width
    1.4mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRLML6344TRPBF Descriptions
The Infineon Technologies IRLML6344TRPBF is a 30V Single N-Channel StrongIRFET? Power MOSFET in a SOT-23 package.

IRLML6344TRPBF Features
Industry-standard surface-mount power package
Product qualification according to JEDEC standard
Silicon optimized for applications switching below <100 kHz
Softer body-diode compared to previous silicon generation

IRLML6344TRPBF Applications
Battery protection
SMPS
DC switch
Load switch
IRLML6344TRPBF More Descriptions
Transistor: N-MOSFET, unipolar, 30V, 5A, 29ohm, 1.3W, -55 150 deg.C, SMD, SOT23
30V Single N-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHSInfineon SCT
Single N-Channel 30 V 37 mOhm 6.8 nC HEXFET® Power Mosfet - SOT-23
Trans MOSFET N-CH 30V 5A 3-Pin SOT-23 T/R
30V 5A 29m´Î@4.5V5A 1.3W 1.1V@10Ã×A N Channel SOT-23(SOT-23-3) MOSFETs ROHS
N CH MOSFET, 30V, 5A, 3-SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):22mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:800mV; No. of Pins:3 ;RoHS Compliant: Yes
Benefits: RoHS Compliant; Low RDS(on); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified MSL1; SOT-23 Footprint | Target Applications: Battery Protection; DC Switches; Load Switch; Load Switch High Side; Load Switch Low Side
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 5 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) mOhm = 37 / Gate-Source Voltage V = 12 / Fall Time ns = 9.1 / Rise Time ns = 5.6 / Turn-OFF Delay Time ns = 22 / Turn-ON Delay Time ns = 4.2 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 1.3
Product Comparison
The three parts on the right have similar specifications to IRLML6344TRPBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain to Source Breakdown Voltage
    Recovery Time
    Max Junction Temperature (Tj)
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Max Operating Temperature
    Min Operating Temperature
    Additional Feature
    Drain to Source Voltage (Vdss)
    Polarity/Channel Type
    FET Technology
    Drain to Source Resistance
    Rds On Max
    Capacitance - Input
    Contact Plating
    Termination
    Voltage - Rated DC
    Current Rating
    Pulsed Drain Current-Max (IDM)
    Dual Supply Voltage
    View Compare
  • IRLML6344TRPBF
    IRLML6344TRPBF
    Infineon Technologies
    12 Weeks
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    HEXFET®
    2010
    e3
    Active
    1 (Unlimited)
    3
    EAR99
    37MOhm
    Matte Tin (Sn)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    30
    1
    1
    1.3W Ta
    Single
    ENHANCEMENT MODE
    1.3W
    4.2 ns
    N-Channel
    SWITCHING
    29m Ω @ 5A, 4.5V
    1.1V @ 10μA
    650pF @ 25V
    5A Ta
    6.8nC @ 4.5V
    5.6ns
    2.5V 4.5V
    ±12V
    9.1 ns
    22 ns
    5A
    800mV
    12V
    5A
    30V
    15 ns
    150°C
    800 mV
    1.12mm
    3.04mm
    1.4mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRLML5103GTRPBF
    IRLML5103GTRPBF
    Infineon Technologies
    -
    Surface Mount
    -
    SOT-23
    3
    -
    -
    -
    -
    -
    e3
    -
    1 (Unlimited)
    3
    EAR99
    -
    Matte Tin (Sn)
    Other Transistors
    -
    DUAL
    GULL WING
    -
    -
    1
    -
    540mW
    Single
    ENHANCEMENT MODE
    540mW
    10 ns
    -
    SWITCHING
    -
    -
    -
    -
    -
    8.2ns
    -
    -
    16 ns
    23 ns
    760mA
    -
    20V
    0.76A
    -30V
    -
    -
    -
    1.016mm
    3.0226mm
    1.397mm
    -
    No
    RoHS Compliant
    -
    150°C
    -55°C
    HIGH RELIABILITY
    30V
    P-CHANNEL
    METAL-OXIDE SEMICONDUCTOR
    600mOhm
    600 mΩ
    75pF
    -
    -
    -
    -
    -
    -
    IRLML6344TRPBF vs IRLML5103GTRPBF
  • IRLML2502GTRPBF
    IRLML2502GTRPBF
    Infineon Technologies
    10 Weeks
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    HEXFET®
    2008
    e3
    Discontinued
    1 (Unlimited)
    3
    EAR99
    45MOhm
    Matte Tin (Sn)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    -
    -
    1
    -
    1.25W Ta
    Single
    ENHANCEMENT MODE
    1.25W
    7.5 ns
    N-Channel
    SWITCHING
    45m Ω @ 4.2A, 4.5V
    1.2V @ 250μA
    740pF @ 15V
    4.2A Ta
    12nC @ 5V
    10ns
    2.5V 4.5V
    ±12V
    26 ns
    54 ns
    4.2A
    -
    12V
    -
    20V
    -
    -
    -
    1.016mm
    3.0226mm
    1.397mm
    -
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    HIGH RELIABILITY
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    IRLML6344TRPBF vs IRLML2502GTRPBF
  • IRLML5203TRPBF
    IRLML5203TRPBF
    Infineon Technologies
    12 Weeks
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    HEXFET®
    2003
    e3
    Active
    1 (Unlimited)
    3
    EAR99
    98MOhm
    -
    Other Transistors
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    -
    -
    1
    -
    1.25W Ta
    Single
    ENHANCEMENT MODE
    1.25W
    12 ns
    P-Channel
    SWITCHING
    98m Ω @ 3A, 10V
    2.5V @ 250μA
    510pF @ 25V
    3A Ta
    14nC @ 10V
    18ns
    4.5V 10V
    ±20V
    52 ns
    88 ns
    -3A
    -2.5V
    20V
    3A
    -30V
    -
    -
    -2.5 V
    1.016mm
    3.0226mm
    3.05mm
    No SVHC
    No
    ROHS3 Compliant
    Contains Lead
    -
    -
    -
    30V
    -
    -
    -
    -
    -
    Tin
    SMD/SMT
    -30V
    -3A
    24A
    -30V
    IRLML6344TRPBF vs IRLML5203TRPBF
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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