Infineon Technologies IRLML6302TR

Name: IRLML6302TR
Brand: Infineon Technologies
SKU: 2492480-IRLML6302TR
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRLML6302TR

Manufacturer:: Infineon Technologies

Ventron No:: 2492480-IRLML6302TR

Description:: MOSFET P-CH 20V 780MA SOT-23

ECAD Model:

Datasheet:: IRLML6302

Specifications

Infineon Technologies IRLML6302TR technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRLML6302TR.

Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Published
2004
Series
HEXFET®
Packaging
Cut Tape (CT)
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Additional Feature
LOGIC LEVEL COMPATIBLE
Subcategory
Other Transistors
Voltage - Rated DC
-20V
Max Power Dissipation
540mW
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Current Rating
-620mA
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Operating Mode
ENHANCEMENT MODE
Power Dissipation
540mW
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
600m Ω @ 610mA, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
97pF @ 15V
Current - Continuous Drain (Id) @ 25°C
780mA Ta
Gate Charge (Qg) (Max) @ Vgs
3.6nC @ 4.45V
Rise Time
22ns
Drain to Source Voltage (Vdss)
20V
Continuous Drain Current (ID)
780mA
Gate to Source Voltage (Vgs)
12V
Drain Current-Max (Abs) (ID)
0.78A
Drain-source On Resistance-Max
0.6Ohm
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead

Description

IRLML6302TR Description
IRLML6302TR is a P-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a voltage of 20V. The operating temperature of IRLML6302TR is -55°C~150°C and its maximum power dissipation is 540mW. IRLML6302TR has 3 pins and it is available in Cut Tape (CT) packaging way. The Drain to Source Voltage (Vdss) of IRLML6302TR is 20V and its Gate to Source Voltage (Vgs) is 12V.

IRLML6302TR Features
Vgs(th) (Max) @ Id: 1.5V @ 250μA Current - Continuous Drain (Id) @ 25°C: 780mA Ta Continuous Drain Current (ID): 780mA Drain Current-Max (Abs) (ID): 0.78A

IRLML6302TR Applications
Power Management Consumer Electronics Portable Devices Industrial

IRLML6302TR More Descriptions

MOSFET, Power; P-Channel; 12 Volts (Max.); -0.78 Amp (Max.); 540 mW
-20V Single P-Channel HEXFET Power MOSFET in a Micro 3 package
Trans MOSFET P-CH 20V 0.78A 3-Pin SOT-23 T/R
MOSFET, P-CHANNEL, -20V, -0.62A, 600 MOHM, 2.4 NC QGSmall Signal Field-Effect Transistor, 0.78A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:-780mA; On-Resistance, Rds(on):600mohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:Micro3; Leaded Process Compatible:No RoHS Compliant: No

Product Comparison

The three parts on the right have similar specifications to IRLML6302TR.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Published

Series

Packaging

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Max Operating Temperature

Min Operating Temperature

Additional Feature

Subcategory

Voltage - Rated DC

Max Power Dissipation

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Qualification Status

Number of Elements

Configuration

Operating Mode

Power Dissipation

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

RoHS Status

Lead Free

Supplier Device Package

Operating Temperature

Power Dissipation-Max

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Surface Mount

Transistor Element Material

JESD-30 Code

Operating Temperature (Max)

JEDEC-95 Code

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

Power Dissipation-Max (Abs)

View Compare
IRLML6302TR

Infineon Technologies

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

2004

HEXFET®

Cut Tape (CT)

e3

Obsolete

1 (Unlimited)

3

EAR99

Matte Tin (Sn)

150°C

-55°C

LOGIC LEVEL COMPATIBLE

Other Transistors

-20V

540mW

MOSFET (Metal Oxide)

DUAL

GULL WING

NOT SPECIFIED

-620mA

NOT SPECIFIED

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

540mW

P-Channel

SWITCHING

600m Ω @ 610mA, 4.5V

1.5V @ 250μA

97pF @ 15V

780mA Ta

3.6nC @ 4.45V

22ns

20V

780mA

12V

0.78A

0.6Ohm

Non-RoHS Compliant

Contains Lead

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRLMS4502TR

Infineon Technologies

-

Surface Mount

SOT-23-6

-

2003

HEXFET®

Cut Tape (CT)

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

-

-

P-Channel

-

42mOhm @ 5.5A, 4.5V

600mV @ 250μA

1820pF @ 10V

5.5A Ta

33nC @ 5V

-

12V

-

-

-

-

Non-RoHS Compliant

-

Micro6™(TSOP-6)

-55°C~150°C TJ

1.7W Ta

2.5V 4.5V

±12V

-

-

-

-

-

-

-

-

-

IRLML6302TR vs IRLMS4502TR
IRLML6402TR

Infineon Technologies

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

2003

HEXFET®

Cut Tape (CT)

e3

Obsolete

1 (Unlimited)

3

EAR99

Matte Tin (Sn)

-

-

HIGH RELIABILITY

Other Transistors

-

-

MOSFET (Metal Oxide)

DUAL

GULL WING

260

-

30

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

-

P-Channel

SWITCHING

65m Ω @ 3.7A, 4.5V

1.2V @ 250μA

633pF @ 10V

3.7A Ta

12nC @ 5V

-

20V

-

-

3.7A

0.065Ohm

Non-RoHS Compliant

-

-

-

-

-

-

YES

SILICON

R-PDSO-G3

150°C

TO-236AB

22A

20V

11 mJ

1.3W

IRLML6302TR vs IRLML6402TR
IRLML5203

Infineon Technologies

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

2003

HEXFET®

Tube

e3

Obsolete

1 (Unlimited)

3

EAR99

Matte Tin (Sn)

-

-

-

Other Transistors

-

-

MOSFET (Metal Oxide)

DUAL

GULL WING

NOT SPECIFIED

-

NOT SPECIFIED

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

-

P-Channel

SWITCHING

98m Ω @ 3A, 10V

2.5V @ 250μA

510pF @ 25V

3A Ta

14nC @ 10V

-

30V

-

-

3A

0.098Ohm

Non-RoHS Compliant

-

-

-

1.25W Ta

4.5V 10V

±20V

YES

SILICON

R-PDSO-G3

150°C

-

24A

30V

-

-

IRLML6302TR vs IRLML5203