IRLML6246TRPBF

Infineon Technologies IRLML6246TRPBF

Part Number:
IRLML6246TRPBF
Manufacturer:
Infineon Technologies
Ventron No:
3070309-IRLML6246TRPBF
Description:
MOSFET N-CH 20V 4.1A SOT-23
ECAD Model:
Datasheet:
IRLML6246TRPBF

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Specifications
Infineon Technologies IRLML6246TRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRLML6246TRPBF.
  • Factory Lead Time
    12 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    HEXFET®
  • Published
    2010
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Resistance
    46MOhm
  • Terminal Finish
    Matte Tin (Sn)
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Number of Elements
    1
  • Power Dissipation-Max
    1.3W Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    1.3W
  • Turn On Delay Time
    3.6 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    46m Ω @ 4.1A, 4.5V
  • Vgs(th) (Max) @ Id
    1.1V @ 5μA
  • Input Capacitance (Ciss) (Max) @ Vds
    290pF @ 16V
  • Current - Continuous Drain (Id) @ 25°C
    4.1A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    3.5nC @ 4.5V
  • Rise Time
    4.9ns
  • Drive Voltage (Max Rds On,Min Rds On)
    2.5V 4.5V
  • Vgs (Max)
    ±12V
  • Fall Time (Typ)
    6 ns
  • Turn-Off Delay Time
    11 ns
  • Continuous Drain Current (ID)
    4.1A
  • Threshold Voltage
    12V
  • Gate to Source Voltage (Vgs)
    12V
  • Drain to Source Breakdown Voltage
    20V
  • Recovery Time
    13 ns
  • Height
    1.016mm
  • Length
    3.0226mm
  • Width
    1.397mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRLML6246TRPBF Description
IRLML6246TRPBF is a kind of P-channel MOSFET that is designed based on advanced processing techniques for the purpose of making extremely low on-resistance per silicon area possible. Moreover, IRLML6246TRPBF is designed with the characteristics that HEXFET? power MOSFETs provide, including fast switching speed and ruggedized device design. All of these make the device more efficient and reliable for use in battery and load management. 

IRLML6246TRPBF Features
Thermal resistance
Power dissipation
Fast switching speed  
Ruggedized device design
Available in the standard SOT-23 package

IRLML6246TRPBF Applications
Load/system switch

IRLML6246TRPBF More Descriptions
MOSFET, 20V, 4.1A, 46 MOHM, 3.5 NC QG, 2.5V DRIVE CAPABLE, SOT-23
20V Single N-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHSInfineon SCT
Single N-Channel 20 V 66 mOhm 3.5 nC HEXFET® Power Mosfet - SOT-23
Trans MOSFET N-CH 20V 4.1A 3-Pin SOT-23 T/R / MOSFET N-CH 20V 4.1A SOT-23
MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: N Power dissipation: 1.3 W
20V 4.1A 1.3W 46m´Î@4.5V4.1A 1.1V@5Ã×A N Channel SOT-23(SOT-23-3) MOSFETs ROHS
MOSFET,N CH,DIODE,20V,4.1A,SOT-23; Transistor Polarity:N Channel; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.03ohm; Rds(on) Test Voltage Vgs:4.5V; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Current Id Max:4.1A; Power Dissipation Pd:1.3W; Voltage Vgs Max:12V
Benefits: RoHS Compliant; Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified MSL1; SOT-23 Footprint | Target Applications: Battery Protection; DC Switches; Load Switch; Load Switch High Side; Load Switch Low Side
Product Comparison
The three parts on the right have similar specifications to IRLML6246TRPBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Recovery Time
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Max Operating Temperature
    Min Operating Temperature
    Additional Feature
    Drain to Source Voltage (Vdss)
    Polarity/Channel Type
    Drain Current-Max (Abs) (ID)
    FET Technology
    Drain to Source Resistance
    Rds On Max
    Capacitance - Input
    Supplier Device Package
    Termination
    Voltage - Rated DC
    Current Rating
    Dual Supply Voltage
    Nominal Vgs
    View Compare
  • IRLML6246TRPBF
    IRLML6246TRPBF
    12 Weeks
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    HEXFET®
    2010
    e3
    Active
    1 (Unlimited)
    3
    EAR99
    46MOhm
    Matte Tin (Sn)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    1
    1.3W Ta
    Single
    ENHANCEMENT MODE
    1.3W
    3.6 ns
    N-Channel
    SWITCHING
    46m Ω @ 4.1A, 4.5V
    1.1V @ 5μA
    290pF @ 16V
    4.1A Ta
    3.5nC @ 4.5V
    4.9ns
    2.5V 4.5V
    ±12V
    6 ns
    11 ns
    4.1A
    12V
    12V
    20V
    13 ns
    1.016mm
    3.0226mm
    1.397mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRLML5103GTRPBF
    -
    Surface Mount
    -
    SOT-23
    3
    -
    -
    -
    -
    -
    e3
    -
    1 (Unlimited)
    3
    EAR99
    -
    Matte Tin (Sn)
    Other Transistors
    -
    DUAL
    GULL WING
    1
    540mW
    Single
    ENHANCEMENT MODE
    540mW
    10 ns
    -
    SWITCHING
    -
    -
    -
    -
    -
    8.2ns
    -
    -
    16 ns
    23 ns
    760mA
    -
    20V
    -30V
    -
    1.016mm
    3.0226mm
    1.397mm
    -
    No
    RoHS Compliant
    -
    150°C
    -55°C
    HIGH RELIABILITY
    30V
    P-CHANNEL
    0.76A
    METAL-OXIDE SEMICONDUCTOR
    600mOhm
    600 mΩ
    75pF
    -
    -
    -
    -
    -
    -
  • IRLMS4502TR
    -
    -
    Surface Mount
    SOT-23-6
    -
    -
    -55°C~150°C TJ
    Cut Tape (CT)
    HEXFET®
    2003
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    1.7W Ta
    -
    -
    -
    -
    P-Channel
    -
    42mOhm @ 5.5A, 4.5V
    600mV @ 250μA
    1820pF @ 10V
    5.5A Ta
    33nC @ 5V
    -
    2.5V 4.5V
    ±12V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    -
    -
    12V
    -
    -
    -
    -
    -
    -
    Micro6™(TSOP-6)
    -
    -
    -
    -
    -
  • IRLMS5703TRPBF
    7 Weeks
    Surface Mount
    Surface Mount
    SOT-23-6
    6
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    HEXFET®
    1997
    e3
    Not For New Designs
    1 (Unlimited)
    6
    EAR99
    180mOhm
    Matte Tin (Sn)
    -
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    1
    1.7W Ta
    Single
    ENHANCEMENT MODE
    1.7W
    10 ns
    P-Channel
    SWITCHING
    180m Ω @ 1.6A, 10V
    1V @ 250μA
    170pF @ 25V
    2.4A Ta
    11nC @ 10V
    12ns
    4.5V 10V
    ±20V
    8.4 ns
    20 ns
    -2.3A
    -1V
    20V
    -30V
    -
    1.4478mm
    2.9972mm
    1.75mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    ULTRA LOW RESISTANCE
    30V
    -
    2.4A
    -
    -
    -
    -
    -
    SMD/SMT
    -30V
    -2.3A
    -30V
    -1 V
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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