Infineon Technologies IRLML6246TRPBF
- Part Number:
- IRLML6246TRPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3070309-IRLML6246TRPBF
- Description:
- MOSFET N-CH 20V 4.1A SOT-23
- Datasheet:
- IRLML6246TRPBF
Infineon Technologies IRLML6246TRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRLML6246TRPBF.
- Factory Lead Time12 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesHEXFET®
- Published2010
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance46MOhm
- Terminal FinishMatte Tin (Sn)
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Number of Elements1
- Power Dissipation-Max1.3W Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation1.3W
- Turn On Delay Time3.6 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs46m Ω @ 4.1A, 4.5V
- Vgs(th) (Max) @ Id1.1V @ 5μA
- Input Capacitance (Ciss) (Max) @ Vds290pF @ 16V
- Current - Continuous Drain (Id) @ 25°C4.1A Ta
- Gate Charge (Qg) (Max) @ Vgs3.5nC @ 4.5V
- Rise Time4.9ns
- Drive Voltage (Max Rds On,Min Rds On)2.5V 4.5V
- Vgs (Max)±12V
- Fall Time (Typ)6 ns
- Turn-Off Delay Time11 ns
- Continuous Drain Current (ID)4.1A
- Threshold Voltage12V
- Gate to Source Voltage (Vgs)12V
- Drain to Source Breakdown Voltage20V
- Recovery Time13 ns
- Height1.016mm
- Length3.0226mm
- Width1.397mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRLML6246TRPBF Description
IRLML6246TRPBF is a kind of P-channel MOSFET that is designed based on advanced processing techniques for the purpose of making extremely low on-resistance per silicon area possible. Moreover, IRLML6246TRPBF is designed with the characteristics that HEXFET? power MOSFETs provide, including fast switching speed and ruggedized device design. All of these make the device more efficient and reliable for use in battery and load management.
IRLML6246TRPBF Features
Thermal resistance
Power dissipation
Fast switching speed
Ruggedized device design
Available in the standard SOT-23 package
IRLML6246TRPBF Applications
Load/system switch
IRLML6246TRPBF is a kind of P-channel MOSFET that is designed based on advanced processing techniques for the purpose of making extremely low on-resistance per silicon area possible. Moreover, IRLML6246TRPBF is designed with the characteristics that HEXFET? power MOSFETs provide, including fast switching speed and ruggedized device design. All of these make the device more efficient and reliable for use in battery and load management.
IRLML6246TRPBF Features
Thermal resistance
Power dissipation
Fast switching speed
Ruggedized device design
Available in the standard SOT-23 package
IRLML6246TRPBF Applications
Load/system switch
IRLML6246TRPBF More Descriptions
MOSFET, 20V, 4.1A, 46 MOHM, 3.5 NC QG, 2.5V DRIVE CAPABLE, SOT-23
20V Single N-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHSInfineon SCT
Single N-Channel 20 V 66 mOhm 3.5 nC HEXFET® Power Mosfet - SOT-23
Trans MOSFET N-CH 20V 4.1A 3-Pin SOT-23 T/R / MOSFET N-CH 20V 4.1A SOT-23
MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: N Power dissipation: 1.3 W
20V 4.1A 1.3W 46m´Î@4.5V4.1A 1.1V@5Ã×A N Channel SOT-23(SOT-23-3) MOSFETs ROHS
MOSFET,N CH,DIODE,20V,4.1A,SOT-23; Transistor Polarity:N Channel; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.03ohm; Rds(on) Test Voltage Vgs:4.5V; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Current Id Max:4.1A; Power Dissipation Pd:1.3W; Voltage Vgs Max:12V
Benefits: RoHS Compliant; Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified MSL1; SOT-23 Footprint | Target Applications: Battery Protection; DC Switches; Load Switch; Load Switch High Side; Load Switch Low Side
20V Single N-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHSInfineon SCT
Single N-Channel 20 V 66 mOhm 3.5 nC HEXFET® Power Mosfet - SOT-23
Trans MOSFET N-CH 20V 4.1A 3-Pin SOT-23 T/R / MOSFET N-CH 20V 4.1A SOT-23
MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: N Power dissipation: 1.3 W
20V 4.1A 1.3W 46m´Î@4.5V4.1A 1.1V@5Ã×A N Channel SOT-23(SOT-23-3) MOSFETs ROHS
MOSFET,N CH,DIODE,20V,4.1A,SOT-23; Transistor Polarity:N Channel; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.03ohm; Rds(on) Test Voltage Vgs:4.5V; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Current Id Max:4.1A; Power Dissipation Pd:1.3W; Voltage Vgs Max:12V
Benefits: RoHS Compliant; Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified MSL1; SOT-23 Footprint | Target Applications: Battery Protection; DC Switches; Load Switch; Load Switch High Side; Load Switch Low Side
The three parts on the right have similar specifications to IRLML6246TRPBF.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishSubcategoryTechnologyTerminal PositionTerminal FormNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageRecovery TimeHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeMax Operating TemperatureMin Operating TemperatureAdditional FeatureDrain to Source Voltage (Vdss)Polarity/Channel TypeDrain Current-Max (Abs) (ID)FET TechnologyDrain to Source ResistanceRds On MaxCapacitance - InputSupplier Device PackageTerminationVoltage - Rated DCCurrent RatingDual Supply VoltageNominal VgsView Compare
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IRLML6246TRPBF12 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-33SILICON-55°C~150°C TJTape & Reel (TR)HEXFET®2010e3Active1 (Unlimited)3EAR9946MOhmMatte Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)DUALGULL WING11.3W TaSingleENHANCEMENT MODE1.3W3.6 nsN-ChannelSWITCHING46m Ω @ 4.1A, 4.5V1.1V @ 5μA290pF @ 16V4.1A Ta3.5nC @ 4.5V4.9ns2.5V 4.5V±12V6 ns11 ns4.1A12V12V20V13 ns1.016mm3.0226mm1.397mmNo SVHCNoROHS3 CompliantLead Free-----------------
-
-Surface Mount-SOT-233-----e3-1 (Unlimited)3EAR99-Matte Tin (Sn)Other Transistors-DUALGULL WING1540mWSingleENHANCEMENT MODE540mW10 ns-SWITCHING-----8.2ns--16 ns23 ns760mA-20V-30V-1.016mm3.0226mm1.397mm-NoRoHS Compliant-150°C-55°CHIGH RELIABILITY30VP-CHANNEL0.76AMETAL-OXIDE SEMICONDUCTOR600mOhm600 mΩ75pF------
-
--Surface MountSOT-23-6---55°C~150°C TJCut Tape (CT)HEXFET®2003-Obsolete1 (Unlimited)-----MOSFET (Metal Oxide)---1.7W Ta----P-Channel-42mOhm @ 5.5A, 4.5V600mV @ 250μA1820pF @ 10V5.5A Ta33nC @ 5V-2.5V 4.5V±12V------------Non-RoHS Compliant----12V------Micro6™(TSOP-6)-----
-
7 WeeksSurface MountSurface MountSOT-23-66SILICON-55°C~150°C TJTape & Reel (TR)HEXFET®1997e3Not For New Designs1 (Unlimited)6EAR99180mOhmMatte Tin (Sn)-MOSFET (Metal Oxide)DUALGULL WING11.7W TaSingleENHANCEMENT MODE1.7W10 nsP-ChannelSWITCHING180m Ω @ 1.6A, 10V1V @ 250μA170pF @ 25V2.4A Ta11nC @ 10V12ns4.5V 10V±20V8.4 ns20 ns-2.3A-1V20V-30V-1.4478mm2.9972mm1.75mmNo SVHCNoROHS3 CompliantLead Free--ULTRA LOW RESISTANCE30V-2.4A-----SMD/SMT-30V-2.3A-30V-1 V
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