Infineon Technologies IRLML2502TRPBF

Name: IRLML2502TRPBF
Brand: Infineon Technologies
SKU: 2848745-IRLML2502TRPBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRLML2502TRPBF

Manufacturer:: Infineon Technologies

Ventron No:: 2848745-IRLML2502TRPBF

Description:: MOSFET N-CH 20V 4.2A SOT-23

ECAD Model:

Datasheet:: IRLML2502TRPBF

Specifications

Infineon Technologies IRLML2502TRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRLML2502TRPBF.

Factory Lead Time
12 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
HEXFET®
Published
2004
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
SMD/SMT
ECCN Code
EAR99
Resistance
45mOhm
Additional Feature
HIGH RELIABILITY
Subcategory
FET General Purpose Power
Voltage - Rated DC
20V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
4.2A
Time@Peak Reflow Temperature-Max (s)
30
Number of Elements
1
Power Dissipation-Max
1.25W Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
1.25W
Turn On Delay Time
7.5 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
45m Ω @ 4.2A, 4.5V
Vgs(th) (Max) @ Id
1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
740pF @ 15V
Current - Continuous Drain (Id) @ 25°C
4.2A Ta
Gate Charge (Qg) (Max) @ Vgs
12nC @ 5V
Rise Time
10ns
Drive Voltage (Max Rds On,Min Rds On)
2.5V 4.5V
Vgs (Max)
±12V
Fall Time (Typ)
26 ns
Turn-Off Delay Time
54 ns
Continuous Drain Current (ID)
4.2A
Threshold Voltage
1.2V
Gate to Source Voltage (Vgs)
12V
Drain to Source Breakdown Voltage
20V
Dual Supply Voltage
20V
Nominal Vgs
1.2 V
Height
1.016mm
Length
2.794mm
Width
3.05mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

IRLML2502TRPBF Description The IRLML2502TRPBF power MOSFETs are made with proven silicon methods and can be used in a variety of applications including DC motors, inverters, SMPS, lights, load switches, and battery-powered applications. For the convenience of design, the IRLML2502TRPBF comes in a range of surface mount and through-hole packages with industry-standard footprints.
IRLML2502TRPBF Features Ultra-Low On-Resistance
Fast Switching
Lead-Free
N-Channel MOSFET
SOT-23 Footprint
Low Profile (<1.1mm)
Available in Tape and Reel
RoHS Compliant, Halogen-Free
IRLML2502TRPBF Applications Commercial and Industrial Applications
Fast Switching
Amplification Purpose
Battery Charger and BMS Circuits
Solar Related Applications
Motor Driver Applications

IRLML2502TRPBF More Descriptions

Transistor: N-MOSFET; unipolar; 12V; 4.3A; 0.05ohm; 1.3W; -55 150 deg.C; SMD; SOT23
MOSFET, Power;N-Ch;VDSS 20V;RDS(ON) 0.035Ohm;ID 4.2A;Micro3;PD 1.25W;VGS /-12V
20V Single N-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHSInfineon SCT
Trans MOSFET N-CH Si 20V 4.2A 3-Pin SOT-23 T/R / HEXFET Power MOSFET
N-Channel 20 V 0.045 Ohm Surface Mount HEXFET Power Mosfet - Micro3
Power Field-Effect Transistor, 4.2A I(D), 20V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; Low Profile (less than 1.1mm); SOT-23 Footprint | Target Applications: DC Switches; Load Switch
MOSFET, N, MICRO3; Transistor Polarity:N Channel; Continuous Drain Current Id:4.2A; Drain Source Voltage Vds:20V; On Resistance Rds(on):45mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1.2V; Power Dissipation Pd:1.25W; Transistor Case Style:µSOIC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:4.2A; Package / Case:Micro3; Power Dissipation Pd:1.25W; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:1.2V; Voltage Vgs Rds on Measurement:4.5V
MOSFET, N REEL 3K; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:20V; Current, Id Cont:4.2A; Resistance, Rds On:0.045ohm; Voltage, Vgs Rds on Measurement:4.5V; Voltage, Vgs th Typ:1.2V; Case Style:SOT-23; Termination Type:SMD; Current, Idm Pulse:33A; Current, Idss Max:1.0µA; External Depth:2.5mm; External Length / Height:1.12mm; N-channel Gate Charge:12nC; No. of Pins:3; Power Dissipation:1.25W; Power, Pd:1.25W; Quantity, Reel:3000; SMD Marking:1G; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Temperature, Tj Max:150°C; Temperature, Tj Min:-55°C; Time, Fall:26s; Time, Rise:10ns; Time, trr Typ:16ns; Transistors, No. of:1; Typ Capacitance Ciss:740pF; Typ Charge Qrr @ Tj = 25°C:8.6nC; Voltage, Vds Max:20V; Voltage, Vgs th Max:1.2V; Voltage, Vgs th Min:0.6V; Width, External:3.05mm; Width, Tape:8mm

Product Comparison

The three parts on the right have similar specifications to IRLML2502TRPBF.

Image

Part Number

Manufacturer

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Termination

ECCN Code

Resistance

Additional Feature

Subcategory

Voltage - Rated DC

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Dual Supply Voltage

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Drain to Source Voltage (Vdss)

Drain Current-Max (Abs) (ID)

Pulsed Drain Current-Max (IDM)

Supplier Device Package

Surface Mount

Terminal Finish

JESD-30 Code

Qualification Status

Operating Temperature (Max)

Configuration

JEDEC-95 Code

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

Power Dissipation-Max (Abs)

View Compare
IRLML2502TRPBF

Infineon Technologies

12 Weeks

Tin

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

HEXFET®

2004

e3

Active

1 (Unlimited)

3

SMD/SMT

EAR99

45mOhm

HIGH RELIABILITY

FET General Purpose Power

20V

MOSFET (Metal Oxide)

DUAL

GULL WING

260

4.2A

30

1

1.25W Ta

Single

ENHANCEMENT MODE

1.25W

7.5 ns

N-Channel

SWITCHING

45m Ω @ 4.2A, 4.5V

1.2V @ 250μA

740pF @ 15V

4.2A Ta

12nC @ 5V

10ns

2.5V 4.5V

±12V

26 ns

54 ns

4.2A

1.2V

12V

20V

20V

1.2 V

1.016mm

2.794mm

3.05mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRLML5203TRPBF

Infineon Technologies

12 Weeks

Tin

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

HEXFET®

2003

e3

Active

1 (Unlimited)

3

SMD/SMT

EAR99

98MOhm

-

Other Transistors

-30V

MOSFET (Metal Oxide)

DUAL

GULL WING

-

-3A

-

1

1.25W Ta

Single

ENHANCEMENT MODE

1.25W

12 ns

P-Channel

SWITCHING

98m Ω @ 3A, 10V

2.5V @ 250μA

510pF @ 25V

3A Ta

14nC @ 10V

18ns

4.5V 10V

±20V

52 ns

88 ns

-3A

-2.5V

20V

-30V

-30V

-2.5 V

1.016mm

3.0226mm

3.05mm

No SVHC

No

ROHS3 Compliant

Contains Lead

30V

3A

24A

-

-

-

-

-

-

-

-

-

-

-

-

IRLML2502TRPBF vs IRLML5203TRPBF
IRLMS4502TR

Infineon Technologies

-

-

-

Surface Mount

SOT-23-6

-

-

-55°C~150°C TJ

Cut Tape (CT)

HEXFET®

2003

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

1.7W Ta

-

-

-

-

P-Channel

-

42mOhm @ 5.5A, 4.5V

600mV @ 250μA

1820pF @ 10V

5.5A Ta

33nC @ 5V

-

2.5V 4.5V

±12V

-

-

-

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

12V

-

-

Micro6™(TSOP-6)

-

-

-

-

-

-

-

-

-

-

-

IRLML2502TRPBF vs IRLMS4502TR
IRLML6402TR

Infineon Technologies

-

-

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

SILICON

-

Cut Tape (CT)

HEXFET®

2003

e3

Obsolete

1 (Unlimited)

3

-

EAR99

-

HIGH RELIABILITY

Other Transistors

-

MOSFET (Metal Oxide)

DUAL

GULL WING

260

-

30

1

-

-

ENHANCEMENT MODE

-

-

P-Channel

SWITCHING

65m Ω @ 3.7A, 4.5V

1.2V @ 250μA

633pF @ 10V

3.7A Ta

12nC @ 5V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

20V

3.7A

22A

-

YES

Matte Tin (Sn)

R-PDSO-G3

Not Qualified

150°C

SINGLE WITH BUILT-IN DIODE

TO-236AB

0.065Ohm

20V

11 mJ

1.3W

IRLML2502TRPBF vs IRLML6402TR